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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for oporate trademark, logo and  
corporate statement, no changes whatsoever have been made to of the document, and  
these changes do not constitute any alteration to the contenelf.  
Renesas Technology Home Pcom  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
Cautions  
Keep safety first in your circuit designs!  
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better  
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with  
semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate  
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or  
(iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas  
Technology Corporation product best suited to the customer's application; they do not convey any  
license under any intellectual property rights, or any other rights, belonginto Renesas Technology  
Corporation or a third party.  
2. Renesas Technology Corporation assumes no responsibility for any ringement of any  
third-party's rights, originating in the use of any product data, dims, algorithms, or  
circuit application examples contained in these materials.  
3. All information contained in these materials, including programs and  
algorithms represents information on products at the tirials, and are  
subject to change by Renesas Technology Corporatct improvements or  
other reasons. It is therefore recommended thachnology Corporation  
or an authorized Renesas Technology Corporlatest product information  
before purchasing a product listed herein.  
The information described here may coypographical errors.  
Renesas Technology Corporation assdamage, liability, or other loss  
rising from these inaccuracies or
Please also pay attention to infTechnology Corporation by various  
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(http://www.renesas.com
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or system that is umstances in which human life is potentially at stake. Please contact  
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contained therein.  
2SH26  
Silicon N Channel IGBT  
High Speed Power Switching  
ADE-208-788A(Z)  
2nd. Edition  
May 1999  
Features  
High speed switching  
Low on-voltage  
Outline  
TO–220AB  
1
2
1. Gate  
3
2. Collector (Flange)  
3. Emitter  
2SH26  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCES  
Ratings  
Unit  
V
Collector to Emitter voltage  
Gate to Emitter voltage  
Collector current  
600  
VGES  
±20  
V
IC  
10  
A
Collector peak current  
Collector dissipation  
Channel temperature  
Storage temperature  
Note: 1. Value at Tc = 25°C  
ic(peak)  
20  
A
Note1  
PC  
50  
W
°C  
°C  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol  
Min  
Typ  
itions  
Zero gate voltage collector  
current  
ICES  
00V, VGE = 0  
Gate to emitter leak current  
IGES  
VGE = ± 20 V, VCE = 0  
IC = 10mA, VCE = 10V  
IC = 10A, VGE = 15V  
Gate to emitter cutoff voltage VGE(off)  
6.0  
Collector to emitter saturation VCE(sat)  
voltage  
Input capacitance  
Cies  
pF  
VCE = 10V, VGE = 0  
f = 1MHz  
Switching time  
00  
380  
ns  
ns  
ns  
ns  
IC = 10A  
RL = 30 Ω  
VGS = ±15V  
Rg = 50 Ω  
600  
760  
2
2SH26  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
100  
80  
60  
40  
20  
30  
10  
3
1
0.3  
0.1  
0.03  
0.0
tage V  
0
50  
100  
150  
200  
300 1000  
(V)  
Case Temperature Tc (°C)  
CE  
Reverse Bia
Typical Output Characteristics  
50  
0  
16  
12  
8
Pulse Test  
13 V  
15 V  
14 V  
20  
10  
5
2
1
12 V  
11 V  
0.5  
4
0.2  
0.1  
Tc = 25 °C  
V
= 10 V  
GS  
0
200  
400  
600  
800  
(V)  
0
2
4
6
8
10  
Collector to Emitter Voltage V  
Collector to Emitter Voltage V  
(V)  
CE  
CE  
3
2SH26  
Collector to Emitter Saturation Voltage  
vs. Gate to Emitter Voltage  
Typical Transfer Characteristics  
20  
16  
12  
8
5
4
3
2
1
Pulse Test  
V
= 10 V  
CE  
Pulse Test  
Tc = 75°C  
I
= 10 A  
C
5 A  
–25°C  
2.5 A  
4
25°C  
0
16  
20  
4
8
12  
16  
20  
0
(V)  
E  
Gate to Emitter Voltage  
V
(V)  
GE  
Collecot to Emitter Saturation V
vs. Collector Current  
cal Capacitance vs.  
ecotor to Emitter Voltage  
10  
V
GE  
= 0  
0  
f = 1 MHz  
Cies  
5
2
300  
100  
–25°C  
1
Coes  
Cres  
30  
10  
0.5  
0.2  
0.1  
V
3
1
GE  
Pulse T
1
3
0.1 0.3  
10  
C
30  
100  
0
10  
20  
30  
40  
50  
(V)  
Collector Current  
I
(A)  
Collector to Emitter Voltage  
V
CE  
4
2SH26  
Dynamic Input Characteristics  
Switching Characteristics  
1000  
500  
500  
400  
300  
200  
100  
20  
16  
12  
8
V
GE  
V
= 200 V  
300 V  
CC  
t
f
400 V  
200  
100  
t
d(off)  
t
d(on)  
I
= 10 A  
V
C
50  
CE  
t
r
V
= 400 V  
300 V  
CC  
4
0
20  
10  
V
00V, V  
= ±15 V  
GE  
200 V  
Ta = 25°C  
0
20  
40  
60  
80  
100  
1
10  
20  
Gate Charge Qg (nc)  
(A)  
Switching Characteristics  
ching Characteristics  
1000  
t
f
t
t
300  
100  
f
t
r
200  
100  
50  
r
t
d(off)  
30  
10  
t
t
d(on)  
I
V
= 10A, R = 30 Ω  
L
3
1
20  
10  
C
30Ω  
= ±15 V, Rg = 50Ω  
GE  
V  
1
3
10  
100 300 1000  
25  
50  
75  
100  
125  
Gate Resisance Rg (  
)
Case Temperature Tc (°C)  
5
2SH26  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s • ch – c  
ch – c = 2Tc = 25 °C  
PW  
T
P
DM  
0.03  
0.01  
10 µ  
100 µ  
1 m  
10  
Pulse
Switching Time Test Circ
Waveform  
90%  
10%  
0
Vin  
90%  
V
CE  
10%  
tr  
E  
onitor  
td(on)  
R
L
Rg  
ton  
D.U.T.  
90%  
V
CC  
Vin ± 15 V  
Ic  
10%  
tf  
td(off)  
toff  
6
2SH26  
Package Dimensions  
Unit: mm  
10.16±0.2  
9.5  
+ 0.1  
– 0.08  
4.44±0.2  
f 3.6  
8.0  
1.26±0.15  
1.2±0.1  
1.27±0.1  
1.5 max  
0.5±0.1  
0.76 ±0.1  
2.54 ±0.5  
2.
2.54 ±0.5  
TO–220AB  
SC–46  
ode  
IAJ  
JEDEC  
7
2SH26  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combusntrol, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranitachi particularly  
for maximum rating, operating supply voltage range, heat radlation  
conditions and other characteristics. Hitachi bears no respwhen used  
beyond the guaranteed ranges. Even within the guaranforeseeable  
failure rates or failure modes in semiconductor devires such as fail-  
safes, so that the equipment incorporating Hitachinjury, fire or other  
consequential damage due to operation of the
5. This product is not designed to be radiatio
6. No one is permitted to reproduce or dor part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office fdocument or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & I
Nippon Bldg., 2-6-0004, Japan  
Tel: Tokyo (03) 3270
URL  
NorthAmer
Europe  
ductor.hitachi.com/  
hitachi-eu.com/hel/ecg  
Asia (Singapor
Asia (Taiwan)  
w.has.hitachi.com.sg/grp3/sicd/index.htm  
ww.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) //www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: p://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.  
8