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25MT060WFAPbF  
Vishay High Power Products  
"Full Bridge" IGBT MTP (Warp Speed IGBT), 50 A  
FEATURES  
• Generation 4 warp speed IGBT technology  
• HEXFRED® antiparallel diodes with ultrasoft  
reverse recovery  
• Very low conduction and switching losses  
• Optional SMT thermistor  
• Al2O3 DBC  
• Very low stray inductance design for high speed operation  
• Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz  
resonant mode  
MTP  
• UL approved file E78996  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
BENEFITS  
VCES  
IC DC  
VCE(on)  
600 V  
69 A  
• Optimized for welding, UPS and SMPS applications  
• Low EMI, requires less snubbing  
• Direct mounting to heatsink  
2.22 V  
• PCB solderable terminals  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
69  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 80 °C  
46  
Pulsed collector current  
Peak switching current  
ICM  
ILM  
200  
200  
25  
A
Diode continuous forward current  
Peak diode forward current  
Gate to emitter voltage  
IF  
TC = 100 °C  
IFM  
200  
20  
VGE  
VISOL  
V
RMS isolation voltage  
Any terminal to case, t = 1 minute  
TC = 25 °C  
2500  
195  
78  
Maximum power dissipation  
per single IGBT  
PD  
W
TC = 100 °C  
Document Number: 94539  
Revision: 01-Mar-09  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
25MT060WFAPbF  
Vishay High Power Products  
"Full Bridge" IGBT MTP  
(Warp Speed IGBT), 50 A  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP. MAX. UNITS  
Collector to emitter breakdown voltage  
V(BR)CES  
VGE = 0 V, IC = 250 μA  
600  
-
-
-
V
Temperature coefficient of breakdown voltage ΔV(BR)CES/ΔTJ VGE = 0 V, IC = 4 mA (25 °C to 125 °C)  
+ 0.6  
2.22  
2.43  
1.65  
2.08  
-
-
V/°C  
VGE = 15 V, IC = 25 A  
VGE = 15 V, IC = 50 A  
-
3.14  
3.25  
1.93  
2.45  
6
-
Collector to emitter saturation voltage  
VCE(on)  
VGE = 15 V, IC = 25 A, TJ = 150 °C  
VGE = 15 V, IC = 50 A, TJ = 150 °C  
VCE = VGE, IC = 250 μA  
-
V
-
Gate threshold voltage  
VGE(th)  
ΔVGE(th)/ΔTJ  
gfe  
3
-
Temperature coefficient of threshold voltage  
Transconductance  
VCE = VGE, IC = 250 μA (25 °C to 125 °C)  
VCE = 100 V, IC = 25 A, PW = 80 μs  
VGE = 0 V, VCE = 600 V, TJ = 25 °C  
VGE = 0 V, VCE = 600 V, TJ = 150 °C  
- 17  
43  
-
mV/°C  
S
-
-
-
-
250  
10  
μA  
Zero gate voltage collector current  
Gate to emitter leakage current  
I
CES (1)  
IGES  
-
-
mA  
nA  
VGE  
=
20 V  
-
-
250  
1.64  
1.93  
1.42  
1.80  
IC = 25 A  
-
1.36  
1.57  
1.19  
1.48  
IC = 50 A  
-
Diode forward voltage drop  
VFM  
V
IC = 25 A; TJ = 150 °C  
IC = 50 A; TJ = 150 °C  
-
-
Note  
(1)  
ICES includes also opposite leg overall leakage  
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP. MAX. UNITS  
Total gate charge (turn-on)  
Gate to emitter charge (turn-on)  
Gate to collector charge (turn-on)  
Turn-on switching loss  
Turn-off switching loss  
Total switching loss  
Qg  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
175  
27  
263  
41  
IC = 25 A  
VCC = 480 V  
GE = 15 V  
Qge  
Qgc  
Eon  
Eoff  
Etot  
Eon  
Eoff  
Etot  
Cies  
Coes  
Cres  
trr  
nC  
mJ  
pF  
V
71  
107  
0.20  
0.62  
0.82  
0.59  
0.74  
1.32  
5415  
1071  
87  
0.13  
0.42  
0.55  
0.39  
0.49  
0.88  
3610  
714  
58  
Rg = 5 Ω, IC = 25 A  
CC = 480 V  
VGE 15 V, TJ = 25 °C  
V
=
Turn-on switching loss  
Turn-off switching loss  
Total switching loss  
Rg = 5 Ω, IC = 25 A  
VCC = 480 V  
VGE  
=
15 V, TJ = 125 °C  
Input capacitance  
VGE = 0 V  
CC = 30 V  
Output capacitance  
V
f = 1.0 MHz  
Reverse transfer capacitance  
Diode reverse recovery time  
Diode peak reverse current  
Diode Recovery charge  
50  
-
ns  
A
Irr  
4.5  
-
VR = 200 V;  
IC = 25 A;  
dI/dt = 200 A/μs  
Qrr  
112  
-
nC  
Diode peak rate of fall of  
recovery during tb  
dI(rec)M/dt  
-
250  
-
A/μs  
www.vishay.com  
2
For technical questions, contact: indmodules@vishay.com  
Document Number: 94539  
Revision: 01-Mar-09  
25MT060WFAPbF  
Vishay High Power Products  
"Full Bridge" IGBT MTP  
(Warp Speed IGBT), 50 A  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN. TYP. MAX. UNITS  
Operating junction temperature range  
Storage temperature range  
TJ  
- 40  
- 40  
-
-
150  
125  
0.64  
0.9  
-
°C  
TStg  
-
IGBT  
-
Junction to case  
Diode  
RthJC  
RthCS  
-
-
0.06  
-
°C/W  
Case to sink per module  
Clearance (1)  
Heatsink compound thermal conductivity = 1 W/mK  
Externel shortest distance in air between 2 terminals  
-
5.5  
-
mm  
g
Shortest distance along external surface of the  
insulating material between 2 terminals  
Creepage (1)  
Weight  
8
-
-
66  
Note  
(1)  
Standard version only i.e. without optional thermistor  
2.75  
2.25  
1.75  
1.25  
160  
140  
120  
100  
80  
I
= 50A  
C
I
= 25A  
C
60  
40  
20  
I
=
C
12.5A  
0
0
10 20 30 40 50 60 70 80  
IC Maximum DC Collector Current (A)  
20  
40  
60  
80  
100  
120  
140  
160  
T
, Junction Temperature (°C)  
J
Fig. 1 - Maximum Collector Current vs. Case Temperature  
Fig. 2 - Typical Collector to Emitter Voltage vs.  
Junction Temperature  
1
D = 0.5  
D = 0.2  
0.1  
0.01  
D = 0.1  
D = 0.05  
D = 0.02  
D =0.01  
Single Pulse  
(Thermal Response)  
0.001  
0.0001  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Fig. 3 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)  
Document Number: 94539  
Revision: 01-Mar-09  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
3
25MT060WFAPbF  
Vishay High Power Products  
"Full Bridge" IGBT MTP  
(Warp Speed IGBT), 50 A  
10  
1
D = 0.50  
0.20  
0.10  
0.1  
0.01  
0.05  
0.02  
0.01  
Notes:  
SINGLE PULSE  
( THERMAL RESPONSE )  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 4 - Maximum Transient Thermal Impedance, Junction to Case (Diode)  
1.5  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
V
= 0V, f = 1 MHZ  
V
V
T
= 480V  
= 15V  
= 25°C  
GE  
CC  
GE  
J
C
C
C
= C +C , C SHORTED  
ies  
res  
oes  
ge  
gc  
gc ce  
= C  
= C + C  
ce  
I
= 25A  
gc  
C
Cies  
E
1.0  
0.5  
0.0  
OFF  
E
ON  
Coes  
Cres  
1
10  
100  
1000  
0
10  
R
20  
30  
40  
50  
60  
V
(V)  
CE  
, Gate Resistance (  
)
Ω
G
Fig. 5 - Typical Capacitance vs. Collector to Emitter Voltage  
Fig. 7 - Typical Switching Losses vs. Gate Resistance  
16.0  
10  
I
= 25A  
C
R
= 5.0Ω  
= 15V  
= 480V  
G
V
= 480V  
CE  
V
V
GE  
CC  
12.0  
8.0  
4.0  
0.0  
I
= 50A  
C
I
= 25A  
C
1
I
= 12.5A  
C
0.1  
0
50  
100  
150  
200  
20  
40  
60  
80  
100  
120  
140  
160  
Q
Total Gate Charge (nC)  
G,  
T , Junction Temperature (°C)  
J
Fig. 6 - Typical Gate Charge vs. Gate to Emitter Voltage  
Fig. 8 - Typical Switching Losses vs. Junction Temperature  
www.vishay.com  
4
For technical questions, contact: indmodules@vishay.com  
Document Number: 94539  
Revision: 01-Mar-09  
25MT060WFAPbF  
Vishay High Power Products  
"Full Bridge" IGBT MTP  
(Warp Speed IGBT), 50 A  
2.0  
1.5  
1.0  
0.5  
0.0  
140  
120  
100  
80  
R
= 5.0Ω  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
G
TJ = 25°C  
E
V
V
= 15V  
= 480V  
OFF  
GE  
CC  
I
I
= 50A  
= 25A  
= 10A  
F
F
I
F
60  
E
ON  
40  
20  
100  
0
10  
I
20  
30  
40  
50  
60  
1000  
di /dt - (A/μs)  
f
Collector Current (A)  
C,  
Fig. 9 - Typical Switching Losses vs.  
Collector to Emitter Current  
Fig. 12 - Typical Reverse Recovery Time vs. dIF/dt  
1000  
100  
10  
30  
V
= 20V  
GE  
= 125°  
VR= 200V  
TJ = 125°C  
TJ = 25°C  
T
J
25  
I
I
I
= 50A  
= 25A  
= 10A  
F
F
F
20  
15  
10  
5
SAFE OPERATING AREA  
10 100  
1
A
0
100  
1
1000  
1000  
di /dt - (A/μs)  
f
V
, Collector-to-Emitter Voltage (V)  
CE  
Fig. 10 - Turn-Off SOA  
Fig. 13 - Typical Reverse Recovery Current vs. dIF/dt  
100  
10  
1
1400  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
1200  
1000  
I
I
I
= 50A  
= 25A  
= 10A  
F
F
F
800  
600  
400  
200  
0
T
T
T
= 150°C  
= 125°C  
= 25°C  
J
J
J
100  
1000  
di /dt - (A/μs)  
f
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
Forward Voltage Drop - V ( V )  
F
Fig. 11 - Maximum Forward Voltage Drop vs.  
Instantaneous Forward Current  
Fig. 14 - Typical Stored Charge vs. dIF/dt  
Document Number: 94539  
Revision: 01-Mar-09  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
5
25MT060WFAPbF  
Vishay High Power Products  
"Full Bridge" IGBT MTP  
(Warp Speed IGBT), 50 A  
10000  
1000  
100  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
I
I
I
= 50A  
= 25A  
= 10A  
F
F
F
A
100  
1000  
di /dt - (A/μs)  
f
Fig. 15 - Typical dI(rec)M/dt vs. dIF/dt  
9, 10  
5
6
4
3
15, 16  
13, 14  
2
1
7
8
11, 12  
Fig. 16 - Electrical diagram  
www.vishay.com  
6
For technical questions, contact: indmodules@vishay.com  
Document Number: 94539  
Revision: 01-Mar-09  
25MT060WFAPbF  
Vishay High Power Products  
"Full Bridge" IGBT MTP  
(Warp Speed IGBT), 50 A  
ORDERING INFORMATION TABLE  
Device code  
25  
MT 060  
W
F
A
PbF  
1
2
3
4
5
6
7
1
2
3
4
-
-
-
-
-
-
-
Current rating (25 = 25 A)  
Essential part number  
Voltage code (060 = 600 V)  
Speed/type (W = Warp IGBT)  
5
6
Circuit configuration (F = Full bridge)  
A = Al2O3 DBC substrate  
7
PbF = Lead (Pb)-free  
CIRCUIT CONFIGURATION  
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95245  
Document Number: 94539  
Revision: 01-Mar-09  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
7
Outline Dimensions  
Vishay Semiconductors  
MTP MOSFET/IGBT Full-Bridge  
DIMENSIONS in millimeters  
Ø 5  
Ø 1.1  
4
2ꢀ.5  
12 ꢀ.5  
2.5  
31.8  
33  
3
2
13  
4
9
1
8
14  
15  
11  
1ꢀ  
12  
5
16  
6
7
ꢀ.3 ꢀ.1  
7
6.6 ꢀ.1  
Ø 5.2 x 3  
8
ꢀ.1  
7.4 ꢀ.1  
3
ꢀ.1  
8
ꢀ.1  
7.4 ꢀ.1  
7
ꢀ.1  
R5.75 (x 2)  
4.9 ꢀ.1  
6.6 ꢀ.1  
39.5  
44.5  
48.7  
ꢀ.6 x h1.2  
1.3  
63.5 ꢀ.25  
Document Number: 95245  
Revision: 24-Sep-08  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1