| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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IPT004N03L
中文翻译 品牌: INFINEON |
英飞凌的 To-无导线封装针对大电流应用进行优化，例如，叉车、轻型电动车 (LEV)、POL（负载点）和电信。这种封装是高功率应用的理想解决方案，这种场合需要高效率、出色的电磁干扰性能以及出色的热性能和节省的空间。 | 电信 | ||
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IPT007N06N
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 52A I(D), 60V, 0.00075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, HSOF-8 | 脉冲 晶体管 | ||
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IPT007N06NATMA1
EDA模型
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 52A I(D), 60V, 0.00075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, HSOF-8 | 脉冲 晶体管 | ||
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IPT008N06NM5LF
中文翻译 品牌: INFINEON |
IPT013N08NM5LF 是英飞凌 OptiMOS? 5 线性 FET 60 V 系列中的出色型号，采用无引脚 TO (TOLL) 封装，在 25?C 温度下可实现业界最低的导通电阻 RDS(on) 和宽安全工作区 (SOA)。OptiMOS? 线性 FET 这一突破性方案实现了导通电阻与线性模 | 电池 电信 电熔丝 | |||
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IPT009N06NM5
中文翻译 品牌: INFINEON |
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light | ||||
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IPT010N08NM5
中文翻译 品牌: INFINEON |
IPT010N08NM5 是英飞凌同类产品中最好的 80V 功率 MOSFET，采用TO-Leadless (TOLL) 封装， 在 25˚C 和 175˚C 条件下具备业界最低的导通电阻 RDS(on)。 OptiMOS™ 5 硅技术是英飞凌最新一代的功率 MOSFET，专为电信和服务器电源的同步 | 电池 驱动 服务器 电信 驱动器 | |||
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IPT012N06N
中文翻译 品牌: INFINEON |
英飞凌的 To-无导线封装针对大电流应用进行优化，例如，叉车、轻型电动车 (LEV)、POL（负载点）和电信。这种封装是高功率应用的理想解决方案，这种场合需要高效率、出色的电磁干扰性能以及出色的热性能和节省的空间。 | 电信 | |||
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IPT012N08N5
中文翻译 品牌: INFINEON |
Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehi | |||
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IPT012N08NF2S
中文翻译 品牌: INFINEON |
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.2 mOhm, addressing a broad range of applications from low- to high-switching fre | ||||
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IPT013N08NM5LF
中文翻译 品牌: INFINEON |
IPT013N08NM5LF 是英飞凌 OptiMOS™ 5 线性 FET 80 V 系列中的出色型号，采用无引脚 TO (TOLL) 封装，在 25˚C 温度下可实现业界最低的导通电阻 RDS(on) 和宽安全工作区 (SOA)。OptiMOS™ 线性 FET 这一突破性方案实现了导通电阻与线性模 | 电池 电信 电熔丝 | |||
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IPT014N08NM5
中文翻译 品牌: INFINEON |
IPT014N08NM5 是英飞凌 1.4 mOhm、80 V OptiMOS? 功率 MOSFET， 采用?TO-Leadless (TOLL) 封装，具有 331 A 的高电流能力 (ID?@25 ?C)。 | ||||
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IPT014N10N5
中文翻译 品牌: INFINEON |
The IPT014N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.4 mOhm, 100 V in a TO-Leadless (TOLL) package with a high current capability of 362 A (ID @25˚ | ||||
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IPT015N10N5
中文翻译 品牌: INFINEON |
Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehi | |||
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IPT015N10N5ATMA1
EDA模型
中文翻译 品牌: INFINEON |
元器件封装:PG-HSOF-8-1; | |||
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IPT015N10NF2S
中文翻译 品牌: INFINEON |
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.5 mOhm, addressing a broad range of applications from low- to high-switching fr | ||||
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IPT017N10NF2S
中文翻译 品牌: INFINEON |
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.7 mOhm, addressing a broad range of applications from low- to high-switching fr | ||||
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IPT017N10NM5LF2
中文翻译 品牌: INFINEON |
IPT017N10NM5LF2 is Infineon’s best-in-class OptiMOS? 5 Linear FET 2 100 V in TO-Leadless (TOLL), offering the industry’s lowest RDS(on) and wide SOA a | ||||
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IPT017N12NM6
中文翻译 品牌: INFINEON |
This is a normal level 120 V MOSFET in TO-Leadless packaging with 1.7 mOhm on-resistance. IPT017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET | ||||
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IPT019N08N5
中文翻译 品牌: INFINEON |
Infineon’s OptiMOS™ 5 80V n-channel power MOSFET IPT019N08N5 in TO-Leadless package is ideally suited for high switching frequencies. This package is | ||||
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IPT020N10N3
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 300A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, HSOF-8 | 脉冲 晶体管 | ||
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IPT020N10N3ATMA1
中文翻译 品牌: INFINEON |
元器件封装:PG-HSOF-8-1; | |||
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IPT020N10N5
中文翻译 品牌: INFINEON |
OptiMOS™ 5 100V industrial power MOSFET IPT020N10N5 in TO-Leadless from Infineon is the ideal choice for high switching frequencies. TO-Leadless (TOLL | ||||
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IPT020N13NM6
中文翻译 品牌: INFINEON |
This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In?TOLL, OptiMOS? 6?135 V achieves ~48% improvements in on-state resista | ||||
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IPT022N10NF2S
中文翻译 品牌: INFINEON |
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 2.2 mOhm, addressing a broad range of applications from low- to high-switching fr | ||||
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IPT023N10NM5LF2
中文翻译 品牌: INFINEON |
The OptiMOS? 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance and linear mode capability. | ||||
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IPT025N15NM6
中文翻译 品牌: INFINEON |
IPT025N15NM6 OptiMOS? 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. | ||||
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IPT026N10N5
中文翻译 品牌: INFINEON |
Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This pac | ||||
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IPT026N12NM6
中文翻译 品牌: INFINEON |
This is a normal level 120 V MOSFET in TO-Leadless packaging with 2.6 mOhm on-resistance. | ||||
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IPT029N08N5
中文翻译 品牌: INFINEON |
OptiMOS? 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can als | |||
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IPT030N12N3 G
中文翻译 品牌: INFINEON |
IPT030N12N3 G在额外的击穿电压裕度和低导通电阻 (RDS(on)) 之间达到了出色平衡，是电池供电设备的理想选择。英飞凌 OptiMOS™ 功率 MOSFET 120V 技术 符合 TO-Leadless 封装要求, 针对大电流应用进行了优化。TOLL 封装是高功率密度应用的理想解决方案 | 电池 |