107-0,1K1,10%查询 - Datasheet ICPDF资料库

品牌	图片	型号	描述	用途标签	PDF	供应商
		5961-01-107-0968 中文翻译品牌: MICROSEMI	Zener Diode, 43V V(Z), 5%, 1.5W	测试二极管
		5961-01-107-0969 中文翻译品牌: MICROSEMI	Zener Diode, 27V V(Z), 5%, 1.5W	测试二极管
		704-15K36 中文翻译品牌: MICROSEMI	TRANSIENT VOLTAGE SUPPESSOR 瞬态电压SUPPESSOR	瞬态抑制器二极管局域网
		704-15K36H1 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36H2 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36H2E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,	局域网二极管
		704-15K36H3 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36H3E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,	局域网二极管
		704-15K36T 中文翻译品牌: MICROSEMI	TRANSIENT VOLTAGE SUPPESSOR 瞬态电压SUPPESSOR	瞬态抑制器二极管
		704-15K36TH1 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36TH1E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,
		704-15K36TH2 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36TH2E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,
		704-15K36TH3 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36TH3E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,
		A32300DX-RQ208C 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 107MHz, 3721-Cell, CMOS, PQFP208,	栅
		A32300DX-RQ208I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 107MHz, 3721-Cell, CMOS, PQFP208,	栅
		A32300DX-RQ240C 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 107MHz, 3721-Cell, CMOS, PQFP240,	栅
		A32300DX-RQ240I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 107MHz, 3721-Cell, CMOS, PQFP240,	栅
		A3P015-QNG68 中文翻译品牌: MICROSEMI	15 k to 1 M System Gates, Up to 144 kbits of True Dual-Port SRAM 15 K至1M的系统门，高达144千比特的真双端口SRAM	静态存储器栅
		A3P1000-FG484 中文翻译品牌: MICROSEMI	High Capacity - 15 k to 1 M System Gates, Up to 144 kbits of True Dual-Port SRAM 高容量 - 15 K至1M的系统门，高达144千比特的真双端口SRAM	静态存储器栅
		A42MX36-PQ240A 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 1184 CLBs, 54000 Gates, 107MHz, 2438-Cell, CMOS, PQFP240, PLASTIC, QFP-240	时钟栅可编程逻辑
		A500K050-BGG272 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 5376-Cell, CMOS, PBGA272	栅可编程逻辑
		A500K050-BGG272I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 5376-Cell, CMOS, PBGA272	栅
		A500K050-FGG144 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 250MHz, 5376-Cell, CMOS, PBGA144	时钟栅可编程逻辑
		A500K050-FGG144I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 250MHz, 5376-Cell, CMOS, PBGA144	时钟栅可编程逻辑
		A500K050-PQG208I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 5376-Cell, CMOS, PQFP208	栅可编程逻辑
		A500K130-BGG272 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 12800-Cell, CMOS, PBGA272	栅可编程逻辑
		A500K130-BGG272I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 12800-Cell, CMOS, PBGA272	栅可编程逻辑
		A500K130-BGG456 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 12800-Cell, CMOS, PBGA456	栅可编程逻辑

107-0,1K1,10% - 型号起始 - MICROSEMI; 总记录数：10000+