2SB566(K)|查询 - Datasheet ICPDF资料库

品牌	图片	型号	描述	用途标签	PDF	供应商
		704-15K36 中文翻译品牌: MICROSEMI	TRANSIENT VOLTAGE SUPPESSOR 瞬态电压SUPPESSOR	瞬态抑制器二极管局域网
		704-15K36H1 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36H2 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36H2E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,	局域网二极管
		704-15K36H3 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36H3E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,	局域网二极管
		704-15K36T 中文翻译品牌: MICROSEMI	TRANSIENT VOLTAGE SUPPESSOR 瞬态电压SUPPESSOR	瞬态抑制器二极管
		704-15K36TH1 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36TH1E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,
		704-15K36TH2 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36TH2E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,
		704-15K36TH3 中文翻译品牌: MICROSEMI	Transient Voltage Suppressor 瞬态电压抑制器\n	瞬态抑制器二极管局域网
		704-15K36TH3E3 中文翻译品牌: MICROSEMI	Trans Voltage Suppressor Diode, 15000W, 31.5V V(RWM), Unidirectional, 1 Element, Silicon,
		A3P015-QNG68 中文翻译品牌: MICROSEMI	15 k to 1 M System Gates, Up to 144 kbits of True Dual-Port SRAM 15 K至1M的系统门，高达144千比特的真双端口SRAM	静态存储器栅
		A3P1000-FG484 中文翻译品牌: MICROSEMI	High Capacity - 15 k to 1 M System Gates, Up to 144 kbits of True Dual-Port SRAM 高容量 - 15 K至1M的系统门，高达144千比特的真双端口SRAM	静态存储器栅
		A500K050-BGG272 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 5376-Cell, CMOS, PBGA272	栅可编程逻辑
		A500K050-BGG272I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 5376-Cell, CMOS, PBGA272	栅
		A500K050-FGG144 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 250MHz, 5376-Cell, CMOS, PBGA144	时钟栅可编程逻辑
		A500K050-FGG144I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 250MHz, 5376-Cell, CMOS, PBGA144	时钟栅可编程逻辑
		A500K050-PQG208I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 5376-Cell, CMOS, PQFP208	栅可编程逻辑
		A500K130-BGG272 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 12800-Cell, CMOS, PBGA272	栅可编程逻辑
		A500K130-BGG272I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 12800-Cell, CMOS, PBGA272	栅可编程逻辑
		A500K130-BGG456 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 12800-Cell, CMOS, PBGA456	栅可编程逻辑
		A500K130-BGG456I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 12800-Cell, CMOS, PBGA456	栅
		A500K130-FGG144I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 250MHz, 12800-Cell, CMOS, PBGA144	时钟栅可编程逻辑
		A500K130-FGG256 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 250MHz, 12800-Cell, CMOS, PBGA256	时钟栅可编程逻辑
		A500K130-FGG256I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 250MHz, 12800-Cell, CMOS, PBGA256	时钟栅可编程逻辑
		A500K130-PQG208 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 12800-Cell, CMOS, PQFP208	栅可编程逻辑
		A500K130-PQG208I 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 12800-Cell, CMOS, PQFP208	栅可编程逻辑
		A500K180-BGG456 中文翻译品牌: MICROSEMI	Field Programmable Gate Array, 18432-Cell, CMOS, PBGA456	栅

2SB566(K)| - 型号起始 - MICROSEMI; 总记录数：10000+