54查询 - Datasheet ICPDF资料库

品牌	图片	型号	描述	用途标签	PDF	供应商
		CL05B104KB54PNC EDA模型中文翻译品牌: SAMSUNG	电容容值:0.1uF;元器件封装:0402;电容容差:±10%;额定电压:50V;最小工作温度:-55°C ;最大工作温度: 125°C;
		K1B1616B2B-BI70 中文翻译品牌: SAMSUNG	Application Specific SRAM, 1MX16, 70ns, CMOS, PBGA54	静态存储器内存集成电路
		K1B1616B2B-BI700 中文翻译品牌: SAMSUNG	Application Specific SRAM, 1MX16, 70ns, CMOS, PBGA54	静态存储器内存集成电路
		K1B1616B2B-FI70 中文翻译品牌: SAMSUNG	Application Specific SRAM, 1MX16, 70ns, CMOS, PBGA54	静态存储器内存集成电路
		K1B1616B2B-FI700 中文翻译品牌: SAMSUNG	Pseudo Static RAM, 1MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 MM PITCH, FBGA-54	内存集成电路
		K1B1616B2B-HI70 中文翻译品牌: SAMSUNG	Application Specific SRAM, 1MX16, 70ns, CMOS, PBGA54	静态存储器内存集成电路
		K1B1616B2B-HI700 中文翻译品牌: SAMSUNG	Application Specific SRAM, 1MX16, 70ns, CMOS, PBGA54	静态存储器内存集成电路
		K1B1616B2B-HI70T 中文翻译品牌: SAMSUNG	Application Specific SRAM, 1MX16, 70ns, CMOS, PBGA54	静态存储器内存集成电路
		K1B1616BDB-BI70T 中文翻译品牌: SAMSUNG	Memory IC, 1MX16, CMOS, PBGA54
		K1B1616BDB-FI700 中文翻译品牌: SAMSUNG	Memory IC, 1MX16, CMOS, PBGA54
		K1B3216B8E-FI700 中文翻译品牌: SAMSUNG	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 MM PITCH, FBGA-54	内存集成电路
		K1B3216BDD-BI70 中文翻译品牌: SAMSUNG	Memory IC, 2MX16, CMOS, PBGA54
		K1B3216BDD-BI700 中文翻译品牌: SAMSUNG	Memory IC, 2MX16, CMOS, PBGA54
		K1B3216BDD-BI70T 中文翻译品牌: SAMSUNG	Memory IC, 2MX16, CMOS, PBGA54
		K1B3216BDD-FI70 中文翻译品牌: SAMSUNG	Memory IC, 2MX16, CMOS, PBGA54
		K1B3216BDD-FI700 中文翻译品牌: SAMSUNG	Memory IC, 2MX16, CMOS, PBGA54
		K1B3216BDD-FI70T 中文翻译品牌: SAMSUNG	Memory IC, 2MX16, CMOS, PBGA54
		K1B3216BDD-I0000 中文翻译品牌: SAMSUNG	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 MM PITCH, FBGA-54	内存集成电路
		K1B3216BDE-FI700 中文翻译品牌: SAMSUNG	Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 PITCH, FBGA-48	内存集成电路
		K1B6416B2D-BI700 中文翻译品牌: SAMSUNG	Memory IC, 4MX16, CMOS, PBGA54
		K1B6416B2D-FI700 中文翻译品牌: SAMSUNG	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 PITCH, FBGA-48	内存集成电路
		K1B6416B2D-FI70T 中文翻译品牌: SAMSUNG	Memory IC, 4MX16, CMOS, PBGA54
		K1B6416B8D-BI70T 中文翻译品牌: SAMSUNG	Memory IC, 4MX16, CMOS, PBGA54
		K1B6416B8D-FI700 中文翻译品牌: SAMSUNG	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 PITCH, FBGA-48	内存集成电路
		K1B6416B8D-FI70T 中文翻译品牌: SAMSUNG	Memory IC, 4MX16, CMOS, PBGA54
		K1C3216B8E-FI700 中文翻译品牌: SAMSUNG	DRAM, 2MX16, 70ns, CMOS, PBGA54	动态存储器
		K1C6416B2D-BI70 中文翻译品牌: SAMSUNG	Memory IC, 4MX16, CMOS, PBGA54
		K1C6416B2D-BI70T 中文翻译品牌: SAMSUNG	Memory IC, 4MX16, CMOS, PBGA54
		K1C6416B2D-I0000 中文翻译品牌: SAMSUNG	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 MM PITCH, FBGA-54	内存集成电路
		K1C6416B8D-BI70 中文翻译品牌: SAMSUNG	Memory IC, 4MX16, CMOS, PBGA54

54 - 型号起始 - SAMSUNG; 总记录数：2639