| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
 |
 |
IRF610
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | |||
|
|
IRF614
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
|
|
IRF624
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
|
|
IRF630
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | |||
|
|
IRF631
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | |||
|
|
IRF634
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
|
|
IRF641
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 局域网 开关 脉冲 晶体管 | ||
|
|
IRF644
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
Total:81
总8条记录，每页显示30条记录分1页显示。