IRFS62 - 型号起始 - SAMSUNG; 总记录数：5

品牌	图片	型号	描述	用途标签	PDF	供应商
		IRFS620 中文翻译品牌: SAMSUNG	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	局域网晶体管
		IRFS621 中文翻译品牌: SAMSUNG	Power Field-Effect Transistor, 4.1A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	局域网晶体管
		IRFS622 中文翻译品牌: SAMSUNG	Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN	局域网晶体管
		IRFS624 中文翻译品牌: SAMSUNG	Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	局域网开关脉冲晶体管
		IRFS625 中文翻译品牌: SAMSUNG	Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN	局域网开关脉冲晶体管

Total:51

总5条记录，每页显示30条记录分1页显示。