品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
![]() |
IRFU9010
中文翻译 品牌: SAMSUNG |
P-CHANNEL POWER MOSFETS P沟道功率MOSFET |
||||
![]() |
IRFU9012
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 脉冲 晶体管 | |||
![]() |
IRFU9014
中文翻译 品牌: SAMSUNG |
P-CHANNEL POWER MOSFETS P沟道功率MOSFET |
||||
![]() |
IRFU9022
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9A I(D), 50V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
![]() |
IRFU9024
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | 开关 脉冲 晶体管 | |||
![]() |
IRFU9110
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.2A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | 开关 晶体管 | |||
![]() |
IRFU9111
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.2A I(D), 80V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | 晶体管 | |||
![]() |
IRFU9120
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | 开关 脉冲 晶体管 | |||
![]() |
IRFU9212
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 脉冲 晶体管 | |||
![]() |
IRFU9220
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | ||||
![]() |
IRFU9221
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 3.6A I(D), 150V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | 晶体管 | |||
![]() |
IRFU9222
中文翻译 品牌: SAMSUNG |
Power Field-Effect Transistor, 2.8A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 | 脉冲 晶体管 |
Total:121
总12条记录,每页显示30条记录分1页显示。