| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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03P4J-AZ
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, SOT-89, 3 PIN | 栅极 可控硅 | ||
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03P4J-T1
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, POWER, PLASTIC, SC-62, 3 PIN | 栅 栅极 | |||
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03P4J-T1B
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, SOT-89, 3 PIN | 栅 栅极 | ||
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03P4J-T1B-AZ
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, SOT-89, 3 PIN | 栅 栅极 | ||
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03P4J-T2
中文翻译 品牌: RENESAS |
0.47A, 400V, SCR, POWER, PLASTIC, SC-62, 3 PIN | 栅 栅极 | |||
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03P4J-T2
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, POWER, PLASTIC, SC-62, 3 PIN | 栅 栅极 | |||
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03P4M-AZ
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, PLASTIC PACKAGE-3 | 栅 栅极 | ||
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03P5J-AZ
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, SOT-89, 3 PIN | 栅 栅极 | ||
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03P5J-T1B
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, SOT-89, 3 PIN | 栅 栅极 | ||
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03P5J-T1B-AZ
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, SOT-89, 3 PIN | 栅 栅极 | ||
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03P5J-T2-AZ
中文翻译 品牌: RENESAS |
SILICON CONTROLLED RECTIFIER,500V V(DRM),300MA I(T),SOT-89 | 栅 栅极 | |||
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03P5J-T2B
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, SOT-89, 3 PIN | 栅 栅极 | ||
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03P5J-T2B-AZ
中文翻译 品牌: NEC |
Silicon Controlled Rectifier, 0.47A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, SOT-89, 3 PIN | 栅 栅极 | ||
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03P6MG
中文翻译 品牌: NEC |
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR 300毫安高，耐压模具SCR |
栅极 | |||
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04006GOF
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 62.8A I(T)RMS, 600V V(RRM), 1 Element, TO-65 | 栅 栅极 | |||
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04006GOFE3
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 62.8A I(T)RMS, 600V V(RRM), 1 Element, TO-65 | 栅 栅极 | |||
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04010GOF
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 62.8A I(T)RMS, 1000V V(RRM), 1 Element, TO-65 | 栅 栅极 | |||
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04010GOFE3
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 62.8A I(T)RMS, 1000V V(RRM), 1 Element, TO-65 | 栅 栅极 | |||
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04012GOF
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 62.8A I(T)RMS, 1200V V(RRM), 1 Element, TO-65 | 栅 栅极 | |||
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04012GOFE3
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 62.8A I(T)RMS, 1200V V(RRM), 1 Element, TO-65 | 栅 栅极 | |||
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05002G0F
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier 可控硅整流器 |
栅极 触发装置 可控硅整流器 | ||
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05002GOFE3
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 80A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN | 栅 栅极 | |||
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05006G0F
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier 可控硅整流器 |
栅极 触发装置 可控硅整流器 | ||
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05008G0F
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier 可控硅整流器 |
栅极 触发装置 可控硅整流器 | ||
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05010GOFE3
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 80A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AC, TO-65, 2 PIN | 栅 栅极 | |||
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05012G0F
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier 可控硅整流器 |
栅极 触发装置 可控硅整流器 | ||
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05012GOF-050
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 80A I(T)RMS, 1200V V(RRM), 1 Element, TO-208AC, METAL, TO-65, 2 PIN | 栅 栅极 | ||
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05012GOF-050E3
中文翻译 品牌: MICROSEMI |
Silicon Controlled Rectifier, 80A I(T)RMS, 1200V V(RRM), 1 Element, TO-208AC, ROHS COMPLIANT, METAL, TO-65, 2 PIN | 栅 栅极 | ||
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050R
中文翻译 品牌: MICROSEMI |
Anode Gate Silicon Controlled Rectifier 阳极门可控硅 |
可控硅 栅 | |||
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050R02G0F
中文翻译 品牌: MICROSEMI |
Anode Gate Silicon Controlled Rectifier 阳极门可控硅 |
可控硅 栅 |