| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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2N6796E3
中文翻译 品牌: MICROSEMI |
Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, ROHS COM | 开关 晶体管 | |||
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2N6796EAPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6796EB
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ||||
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2N6796EBPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6796EC
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ||||
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2N6796EDPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6796LCC4
中文翻译 品牌: SEME-LAB |
N-CHANNEL POWER MOSFET N沟道功率MOSFET |
晶体 晶体管 脉冲 | ||
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2N6796SCC5205/019
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ||||
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2N6796SCC5205/019PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | ||||
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2N6796TX
中文翻译 品牌: RENESAS |
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 开关 脉冲 晶体管 | |||
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2N6796TXV
中文翻译 品牌: RENESAS |
8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 开关 脉冲 晶体管 | |||
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2N6796U
中文翻译 品牌: MICROSEMI |
N-CHANNEL MOSFET N沟道MOSFET |
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2N6796_03
中文翻译 品牌: SEME-LAB |
TMOS FET ENHANCEMENT N - CHANNEL TMOS场效应管增强型的n - 通道 |
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2N6796_10
中文翻译 品牌: MICROSEMI |
N-CHANNEL MOSFET N沟道MOSFET |
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2N6797
中文翻译 品牌: ETC |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39
晶体管| MOSFET | N沟道| 150V V（ BR ） DSS | 3.5AI （D ） | TO- 39\n |
晶体 晶体管 | |||
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2N6798
中文翻译 品牌: SEME-LAB |
N-CHANNEL ENHANCEMENT MODE TRANSISTOR N沟道增强型晶体管 |
晶体 晶体管 开关 脉冲 | ||
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2N6798
中文翻译 品牌: INFINEON |
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6798 with Hermetic Packaging | |||
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2N6798
中文翻译 品牌: MICROSEMI |
N-CHANNEL MOSFET N沟道MOSFET |
晶体 小信号场效应晶体管 开关 脉冲 | ||
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2N6798E
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 晶体管 | |||
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2N6798EA
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 晶体管 | |||
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2N6798EB
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 晶体管 | |||
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2N6798EBPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 晶体管 | |||
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2N6798EC
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ||||
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2N6798ED
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 晶体管 | |||
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2N6798EPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 晶体管 | |||
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2N6798SCC5205/019
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | 晶体管 | |||
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2N6798TX
中文翻译 品牌: RENESAS |
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 开关 脉冲 晶体管 | |||
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2N6798TXV
中文翻译 品牌: RENESAS |
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 开关 脉冲 晶体管 | |||
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2N6798TXV
中文翻译 品牌: FAIRCHILD |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 开关 脉冲 晶体管 | |||
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2N6798U
中文翻译 品牌: MICROSEMI |
N-CHANNEL MOSFET N沟道MOSFET |