品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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30KP58CA
中文翻译 品牌: DIGITRON |
Descriptive:Transient Voltage Suppressor;Direction:Bi-directional | ||||
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30KP58CA
中文翻译 品牌: RECTRON |
Package / Case : R-6;Mounting Style : Through Hole;Power Rating : 30000 W;Polarity : Bidirectional;Breakdown Voltage Vbr : 64.8 V;Operating Standoff V | ||||
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30KP58CA
中文翻译 品牌: JIEJIE |
JJM Package:R6; Uni-Polar / Bi-Polar:Bi-Polar; VR_Typ (V):58; IR_Max (μA):20; @ VR (V):58; VBR_Min (V):64.8; VBR_Max (V):71.28; @ IT (mA):5; PPP_Max | 局域网(LAN)标准 | |||
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30KP58CA-AP
中文翻译 品牌: MCC |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, R-6, 2 PIN | ||||
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30KP58CA-AP-HF
中文翻译 品牌: MCC |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, | ||||
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30KP58CA-BP
中文翻译 品牌: MCC |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, R-6, 2 PIN | ||||
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30KP58CA-BP-HF
中文翻译 品牌: MCC |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, | ||||
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30KP58CA-TP-HF
中文翻译 品牌: MCC |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, | ||||
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30KP58CATR
中文翻译 品牌: MICROSEMI |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2 | ||||
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30KP58CE3TR
中文翻译 品牌: MICROSEMI |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2 | ||||
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30KP58E3TR
中文翻译 品牌: MICROSEMI |
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2 | ||||
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30KP58S
中文翻译 品牌: LGE |
Glass passivated junction chip 玻璃钝化结芯片 |
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30KP58SA
中文翻译 品牌: LGE |
Glass passivated junction chip 玻璃钝化结芯片 |
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30KP58SC
中文翻译 品牌: LGE |
Glass passivated junction chip 玻璃钝化结芯片 |
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30KP58SCA
中文翻译 品牌: LGE |
Glass passivated junction chip 玻璃钝化结芯片 |
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30KP58TRE3
中文翻译 品牌: MICROSEMI |
Trans Voltage Suppressor Diode, 58V V(RWM), Unidirectional, |