| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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IRF510S
中文翻译 品牌: INFINEON |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=5.6A) 功率MOSFET （ VDSS = 100V ， RDS（ON） = 0.54ohm ，ID = 5.6A ） |
晶体 晶体管 局域网 | |||
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IRF510S
EDA模型
中文翻译 品牌: VISHAY |
Power MOSFET 功率MOSFET |
晶体 晶体管 功率场效应晶体管 局域网 | ||
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IRF510S
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 局域网 晶体管 | |||
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IRF510S, SiHF510S
中文翻译 品牌: VISHAY |
Power MOSFET | ||||
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IRF510SPBF
中文翻译 品牌: INFINEON |
HEXFET Power MOSFET HEXFET功率MOSFET |
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 | |||
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IRF510SPBF
EDA模型
中文翻译 品牌: VISHAY |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, S | 局域网 开关 脉冲 晶体管 | ||
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IRF510STRL
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | 晶体 晶体管 开关 脉冲 局域网 | |||
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IRF510STRLPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2 | 局域网 开关 脉冲 晶体管 | |||
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IRF510STRLPBF
中文翻译 品牌: VISHAY |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2 | 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 | ||
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IRF510STRR
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | ||||
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IRF510STRRPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2 | 局域网 开关 脉冲 晶体管 | |||
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IRF510STRRPBF
中文翻译 品牌: VISHAY |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2 | 局域网 开关 脉冲 晶体管 | ||
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IRF510T
中文翻译 品牌: MOTOROLA |
4 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | ||||
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IRF510U
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF510U2
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 4A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF510W
中文翻译 品牌: MOTOROLA |
4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | ||||
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IRF510WC
中文翻译 品牌: MOTOROLA |
4A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | ||||
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IRF511
中文翻译 品牌: FAIRCHILD |
N-Channel Power MOSFETs, 5.5 A, 60-100V N沟道功率MOSFET ， 5.5 A， 60-100V |
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IRF511
中文翻译 品牌: SUPERTEX |
N-Channel Enhancement-Mode Vertical DMOS Power FETs N沟道增强型垂直DMOS功率场效应管 |
晶体 晶体管 功率场效应晶体管 | |||
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IRF511
中文翻译 品牌: HARRIS |
4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs 4.9A ， 5.6A和， 80V和100V ， 0.54和0.74 Ohm的N通道功率MOSFET |
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IRF511
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF511
中文翻译 品牌: TI |
IRF511 | ||||
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IRF511
中文翻译 品牌: NJSEMI |
Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220 | ||||
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IRF511-001PBF
中文翻译 品牌: INFINEON |
5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET | 局域网 脉冲 晶体管 | |||
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IRF511-002
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
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IRF511-003PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
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IRF511-004
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
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IRF511-005
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
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IRF511-005PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||||
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IRF511-006
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |