| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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IRF610FPBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | ||||
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IRF610FX
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | ||||
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IRF610L
中文翻译 品牌: MOTOROLA |
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 局域网 晶体管 | |||
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IRF610LPBF
中文翻译 品牌: VISHAY |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | |||
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IRF610N
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF610PBF
EDA模型
中文翻译 品牌: VISHAY |
Power MOSFET 功率MOSFET |
晶体 晶体管 功率场效应晶体管 开关 脉冲 PC 局域网 | ||
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IRF610PBF
中文翻译 品牌: INFINEON |
HEXFET㈢ Power MOSFET HEXFET㈢功率MOSFET |
晶体 晶体管 开关 脉冲 PC 局域网 | |||
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IRF610R
中文翻译 品牌: NJSEMI |
Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB | ||||
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IRF610S
中文翻译 品牌: INFINEON |
HEXFET Power MOSFET HEXFET功率MOSFET |
晶体 晶体管 局域网 | |||
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IRF610S
中文翻译 品牌: NJSEMI |
Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK | 局域网 晶体管 | |||
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IRF610S
中文翻译 品牌: MOTOROLA |
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 局域网 晶体管 | |||
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IRF610S
EDA模型
中文翻译 品牌: VISHAY |
元器件封装:TO-263; | |||
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IRF610S, SiHF610S, IRF610L, SiHF610L
中文翻译 品牌: VISHAY |
Power MOSFET | ||||
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IRF610SPBF
中文翻译 品牌: INFINEON |
HEXFET㈢ Power MOSFET HEXFET㈢功率MOSFET |
晶体 晶体管 开关 | |||
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IRF610STRL
中文翻译 品牌: VISHAY |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | |||
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IRF610STRLPBF
中文翻译 品牌: VISHAY |
漏源电压Vdss(V):200V;额定电流Id(A):3.3A (Tc);最大导通阻抗Ron(mΩ):1.5 Ohm @ 2A, 10V;类型:N-Channel;栅极电荷Qg(nC):8.2nC | 栅 栅极 | ||
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IRF610STRR
中文翻译 品牌: VISHAY |
元器件封装:TO-263; | ||||
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IRF610STRRPBF
中文翻译 品牌: VISHAY |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | |||
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IRF610T
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF610U
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF610U2
中文翻译 品牌: MOTOROLA |
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | ||||
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IRF610UA
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF610W
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF610WC
中文翻译 品牌: MOTOROLA |
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||||
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IRF611
中文翻译 品牌: FAIRCHILD |
N-Channel Power MOSFETs, 3.5A, 150-200V N沟道功率MOSFET ， 3.5A ， 150-200V |
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IRF611
中文翻译 品牌: TI |
TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,3.3A I(D),TO-220AB | ||||
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IRF611
中文翻译 品牌: VISHAY |
Power Field-Effect Transistor, 2.5A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | |||
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IRF611
中文翻译 品牌: NJSEMI |
Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB | ||||
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IRF611
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | ||||
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IRF611-001PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 3.3A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |