MICROSEMI什么品牌_MICROSEMI代理商_MICROSEMI产品选型大全-ICPDF资料库

品牌	图片	型号	描述	用途标签	PDF	供应商
		EDI4G7332EV7D 中文翻译品牌: MICROSEMI	EDO DRAM Module, 32MX72, 70ns, CMOS, DIMM-168	动态存储器内存集成电路
		W332M64V-100SBC 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX64, 7ns, CMOS, PBGA208, 13 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W332M64V-133SBI 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX64, 5.5ns, CMOS, PBGA208, 13 X 22 MM, PLASTIC, BGA-208	时钟动态存储器内存集成电路
		W332M72V-100SBC 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX72, 7ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W332M72V-100SBI 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX72, 7ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W332M72V-100SBM 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX72, 7ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W332M72V-125SBC 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX72, 6ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W332M72V-125SBI 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX72, 6ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W332M72V-125SBM 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX72, 6ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W332M72V-133SBC 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX72, 5.5ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W332M72V-133SBI 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX72, 5.5ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W332M72V-133SBM 中文翻译品牌: MICROSEMI	Synchronous DRAM, 32MX72, 5.5ns, CMOS, PBGA208, 16 X 22 MM, PLASTIC, BGA-208	动态存储器内存集成电路
		W364M72V-100SBC 中文翻译品牌: MICROSEMI	Synchronous DRAM, 64MX72, 7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	时钟动态存储器内存集成电路
		W364M72V-100SBI 中文翻译品牌: MICROSEMI	Synchronous DRAM, 64MX72, 7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	动态存储器内存集成电路
		W364M72V-100SBM 中文翻译品牌: MICROSEMI	Synchronous DRAM, 64MX72, 7ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	动态存储器内存集成电路
		W364M72V-125SBI 中文翻译品牌: MICROSEMI	Synchronous DRAM, 64MX72, 6ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	动态存储器内存集成电路
		W364M72V-133SBC 中文翻译品牌: MICROSEMI	Synchronous DRAM, 64MX72, 5.5ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	时钟动态存储器内存集成电路
		W364M72V-133SBI 中文翻译品牌: MICROSEMI	Synchronous DRAM, 64MX72, 5.5ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	动态存储器内存集成电路
		W364M72V-133SBM 中文翻译品牌: MICROSEMI	Synchronous DRAM, 64MX72, 5.5ns, CMOS, PBGA219, 32 X 25 MM, PLASTIC, BGA-219	动态存储器内存集成电路
		W3DG63126V10D2 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 128MX64, 6ns, CMOS, DIMM-168	动态存储器内存集成电路
		W3DG63126V75D2 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 128MX64, 5.4ns, CMOS, DIMM-168	动态存储器内存集成电路
		W3DG63126V7D2 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 128MX64, 5.4ns, CMOS, DIMM-168	动态存储器内存集成电路
		W3DG6318V10D2MG 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 16MX64, CMOS, ROHS COMPLIANT, DIMM-168	动态存储器内存集成电路
		W3DG6318V10D2SG 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 16MX64, CMOS, ROHS COMPLIANT, DIMM-168	动态存储器内存集成电路
		W3DG6318V75D2MG 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 16MX64, CMOS, ROHS COMPLIANT, DIMM-168	动态存储器
		W3DG6318V75D2SG 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 16MX64, CMOS, ROHS COMPLIANT, DIMM-168	动态存储器
		W3DG6318V7D2MG 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 16MX64, CMOS, ROHS COMPLIANT, DIMM-168	动态存储器内存集成电路
		W3DG6318V7D2SG 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 16MX64, CMOS, ROHS COMPLIANT, DIMM-168	动态存储器
		W3DG6363V10D2-G 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 64MX64, 6ns, CMOS, DIMM-168	动态存储器
		W3DG6363V10D2-GG 中文翻译品牌: MICROSEMI	Synchronous DRAM Module, 64MX64, 6ns, CMOS, ROHS COMPLIANT, DIMM-168	动态存储器内存集成电路

型号等于：	023 (1) 0230200L (1) 0230200LE3 (1) 0230300L (1) 0230400L (1) 0230400LE3 (1) 0230500L (1) 0230500LE3 (1) 0230600L (1) 0230600LE3 (1) 035 (1) 03508G2F (1) 03508GF (1) 03508GWFE3 (1) 03508HWF (1) 03508HWFE3 (1) 03508JWF (1) 03508JWFE3 (1) 03508KWF (1) 03510G2F (1) 03510GF (1) 03510GWFE3 (1) 03510GXFE3 (1) 03510HWFE3 (1) 03510HXFE3 (1) 03510JWF (1) 03510JXF (1) 03510KWF (1) 03510KXFE3 (1) 03512G2F (1) 03512GF (1)
型号起始：	0150SC-125* (1) 023* (1) 0230200L* (1) 0230200LE3* (1) 0230300L* (1) 0230400L* (1) 0230400LE3* (1) 0230500L* (1) 0230500LE3* (1) 0230600L* (1) 0230600LE3* (1) 035* (1) 03508G2F* (1) 03508GF* (1) 03508GWFE3* (1) 03508HWF* (1) 03508HWFE3* (1) 03508JWF* (1) 03508JWFE3* (1) 03508KWF* (1) 03510G2F* (1) 03510GF* (1) 03510GWFE3* (1) 03510GXFE3* (1) 03510HWFE3* (1) 03510HXFE3* (1) 03510JWF* (1) 03510JXF* (1) 03510KWF* (1) 03510KXFE3* (1) 03512G2F* (1)
所属品牌：	不限 MICROSEMI(531071)
功能分类：	不限测试(114702) 二极管(198339) 局域网(72570) 光电二极管(50272) 机械(16189) 振荡器(16234) 整流二极管(16317) 桥式整流二极管(12698) 齐纳二极管(35904) 温度补偿(9012) CD(9533) 瞬态抑制器(12105) ATM(4389) 异步传输模式(4389) 电视(9064) 栅(7961) 稳压二极管(5932) 内存集成电路(4700) 时钟(2813) 可编程逻辑(5440) 输出元件(2448) 电信(1553) 电信集成电路(1559) 继电器(973) 闪存(1338) 静态存储器(2730) 稳压器(1222) 现场可编程门阵列(1745) 晶体管(4339) 动态存储器(1092) 双倍数据速率(791) 石英晶振(973) 变容二极管(933) 超快恢复二极管(1511) 快速恢复二极管(2266) 压控振荡器(435) 栅极(618) 软恢复二极管(431) 软恢复能力电源(412) 稳流二极管(299) 衰减器(712) 开关(3249) 晶体(2536) 存储(514) 功率场效应晶体管(412) 脉冲(1041) 控制器(326) 蜂窝(369) 输入元件(197) 双极性晶体管(683) 高压(693)

MICROSEMI - 型号起始 - 动态存储器; 总记录数：1092