RC网络 - 型号起始 - 功率控制; 总记录数：22

品牌	图片	型号	描述	用途标签	PDF	供应商
		IHW30N160R2 中文翻译品牌: INFINEON	TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode TRENCHSTOP反向导通（ RC- ）与IGBT的单片体二极管	晶体二极管晶体管功率控制双极性晶体管栅局域网
		IKD10N60R 中文翻译品牌: INFINEON	âRC-D Fastâ: RC-Drives IGBT optimized for high switching frequency â ???? RC -D FASTA ???? ：高开关频率的RC - IGBT驱动器优化	晶体驱动器开关晶体管功率控制双极性晶体管栅
		IKD10N60RF 中文翻译品牌: INFINEON	âRC-D Fastâ: RC-Drives IGBT optimized for high switching frequency â ???? RC -D FASTA ???? ：高开关频率的RC - IGBT驱动器优化	晶体驱动器开关晶体管功率控制双极性晶体管
		IKD15N60R 中文翻译品牌: INFINEON	âRC-D Fastâ: RC-Drives IGBT optimized for high switching frequency â ???? RC -D FASTA ???? ：高开关频率的RC - IGBT驱动器优化	晶体驱动器开关晶体管功率控制双极性晶体管栅
		IKD15N60RF 中文翻译品牌: INFINEON	âRC-D Fastâ: RC-Drives IGBT optimized for high switching frequency â ???? RC -D FASTA ???? ：高开关频率的RC - IGBT驱动器优化	晶体驱动器开关晶体管功率控制双极性晶体管
		IKU10N60R 中文翻译品牌: INFINEON	âRC-D Fastâ: RC-Drives IGBT optimized for high switching frequency â ???? RC -D FASTA ???? ：高开关频率的RC - IGBT驱动器优化	晶体驱动器开关晶体管功率控制双极性晶体管栅
		IRG4RC10SD 中文翻译品牌: INFINEON	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V	晶体二极管晶体管功率控制瞄准线栅超快软恢复二极管快速软恢复二极管
		IRG4RC10SDPBF 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC10SDTRL 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC10SDTRPBF 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC10SDTRR 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, PLASTIC, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC10SDTRRP 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC10STRLPBF 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3	栅功率控制晶体管
		IRG4RC10STRPBF 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3	栅功率控制晶体管
		IRG4RC10U 中文翻译品牌: INFINEON	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) 绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 2.15V ， @ VGE = 15V ， IC =	晶体晶体管功率控制双极性晶体管栅
		IRG4RC10UD 中文翻译品牌: INFINEON	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V	晶体二极管晶体管功率控制瞄准线双极性晶体管栅超快软恢复二极管快速软恢复二极管
		IRG4RC10UDTR 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC10UDTRL 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC10UDTRLP 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC10UDTRPBF 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC10UDTRRP 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 8.5A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, DPAK-3	栅瞄准线功率控制晶体管
		IRG4RC20FTR 中文翻译品牌: INFINEON	Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3	栅功率控制晶体管

Total:221

总22条记录，每页显示30条记录分1页显示。