品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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2EDN7523F
中文翻译 品牌: INFINEON |
Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching | |||
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2EDN7523G
中文翻译 品牌: INFINEON |
Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching | |||
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2EDN7523R
中文翻译 品牌: INFINEON |
Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching | ||||
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2EDN7524F
中文翻译 品牌: INFINEON |
Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching | |||
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2EDN7524F_16
中文翻译 品牌: INFINEON |
Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching | ||||
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2EDN7524G
中文翻译 品牌: INFINEON |
Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching | |||
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2EDN7524R
中文翻译 品牌: INFINEON |
Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching | |||
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2EDN8523R
中文翻译 品牌: INFINEON |
Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching | 驱动 光电二极管 接口集成电路 | |||
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2EDN8524R
中文翻译 品牌: INFINEON |
Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching | ||||
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2EDR6258X
中文翻译 品牌: INFINEON |
EiceDRIVER? 2EDR6258X是一款加强型隔离栅极驱动器IC,用于控制SMPS中强制性安全隔离屏障。这款强大的5 A/9 A源/汇双通道栅极驱动器具有非常高的150 V/ns CMTI | 栅极驱动 驱动器 | |||
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2EDR8259H
中文翻译 品牌: INFINEON |
EiceDRIVER? 2EDR8259H是一款加强型隔离栅极驱动器IC,用于控制SMPS中强制性安全隔离屏障。这款强大的5 A/9 A源/汇双通道栅极驱动器具有非常高的150 V/ns CMTI | 栅极驱动 驱动器 | |||
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760301103
中文翻译 品牌: WURTH |
WE-GDT Gate-Drive-Transformer WE- GDT栅极驱动变压器 |
变压器 栅极 栅极驱动 | ||
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760301104
中文翻译 品牌: WURTH |
WE-GDT Gate-Drive-Transformer WE- GDT栅极驱动变压器 |
变压器 栅极 栅极驱动 | ||
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760301105
中文翻译 品牌: WURTH |
WE-GDT Gate-Drive-Transformer WE- GDT栅极驱动变压器 |
变压器 栅极 栅极驱动 | ||
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760301106
中文翻译 品牌: WURTH |
WE-GDT Gate-Drive-Transformer WE- GDT栅极驱动变压器 |
变压器 栅极 栅极驱动 | ||
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760301107
中文翻译 品牌: WURTH |
WE-GDT Gate-Drive-Transformer WE- GDT栅极驱动变压器 |
变压器 栅极 栅极驱动 | ||
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AGDT-3738
中文翻译 品牌: ALLIED |
Gate Drive Transformer 栅极驱动变压器 |
变压器 栅极 栅极驱动 | |||
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BL10N40
中文翻译 品牌: BELLING |
BL10N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perform | ||||
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BL10N60
中文翻译 品牌: BELLING |
BL10N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perform | ||||
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BL10N60A
中文翻译 品牌: BELLING |
BL10N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perfor | ||||
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BL10N65A
中文翻译 品牌: BELLING |
BL10N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perfor | ||||
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BL10N70
中文翻译 品牌: BELLING |
BL10N70, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perform | ||||
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BL10N70A
中文翻译 品牌: BELLING |
BL10N70A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perfor | ||||
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BL10N80
中文翻译 品牌: BELLING |
BL10N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perform | ||||
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BL12N60
中文翻译 品牌: BELLING |
BL12N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perform | ||||
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BL12N60A
中文翻译 品牌: BELLING |
BL12N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perfor | ||||
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BL12N65
中文翻译 品牌: BELLING |
BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perform | ||||
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BL12N65A
中文翻译 品牌: BELLING |
BL12N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perfor | ||||
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BL12N70
中文翻译 品牌: BELLING |
BL12N70, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perform | ||||
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BL13N25
中文翻译 品牌: BELLING |
BL13N25R, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching perfor |