TP2114-SR [3PEAK]
Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps;
| 型号： | TP2114-SR |
| 厂家： | 
3PEAK |
| 描述： | Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps |
| 文件： | 总18页 (文件大小：801K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TP2111/TP2111N/TP2112/TP2114
3PEAK
Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Features
Description
The TP211x are ultra-low power, precision CMOS
op-amps that provide a constant 10kHz bandwidth
Ultra-low Supply Current:
300nA Typical / 500nA Maximum per Amplifier
Stable 10 kHz GBWP with 6 mV/μs Slew Rate
Offset Voltage: 1.5 mV Maximum
and 10mV/μs slew rate with only 300nA quiescent
current per amplifier. The ground-sensing input
common-mode range, guaranteed 1.5mV VOS and
ultra-low 0.4μV/°C VOS TC enables accurate and
stable measurement for both high side and low side
current sensing.
Ultra-low VOS TC: 0.4 μV/°C
Ultra-low Input Bias Current: 0.1 fA Typical
Unity Gain Stable for 1,000 nF Capacitive Load
High 120 dB Open-Loop Voltage Gain
Ground-Sensing Input Common-Mode Range
Outputs Swing Rail-to-Rail
The TP211x have carefully designed CMOS input
stage that outperforms competitors with typically
0.1fA IB. This ultra-low input current significantly
reduces IB and IOS errors introduced in giga-Ω
resistance, high impedance photodiode, and charge
sense situations. The TP211x are unity gain stable
with 1,000nF capacitive load. They can operate from
a single -supply voltage of +1.8V to +6.0V or a
dual-supply voltage of ±0.9V to ±3.0V, and features
ground-sensing inputs and rail-to-rail output.
Outputs Source and Sink 20 mA of Load Current
No Phase Reversal for Overdriven Inputs
Ultra-low Single-Supply Operation Down to +1.8V
Shutdown Current: 3 nA Typical (TP2111N)
–40°C to 125°C Operation Range
The combined features make the TP211x ideally
suited for a variety of 2-cell NiCd/Alkaline battery or
single-Li+ battery powered portable applications.
Potential applications include low frequency signal
conditioning, mobile accessories, wireless remote
sensing, vibration monitors, ECGs, pulse monitors,
glucose meters, smoke and fire detectors, and
backup battery sensors.
Robust 8 kV – HBM and 2 kV – CDM ESD Rating
Green, Popular Type Package
Applications
Current Sensing
For applications that require power-down, the
TP2111N has a low-power shutdown mode that
reduces supply current to 3nA typically, and forces
the output into a high-impedance state.
Threshold Detectors/Discriminators
Low Power Filters
Handsets and Mobile Accessories
Wireless Remote Sensors, Active RFID Readers
Gas/Oxygen/Environment Sensors
Battery or Solar Powered Devices
Sensor Network Powered by Energy Scavenging
3PEAK and the 3PEAK logo are registered trademarks of
3PEAK INCORPORATED. All other trademarks are the property
of their respective owners.
ICC
POWER IN
LOAD
Ultra-low Supply Current Op-amps:
R3
Supply Current
GBWP
0.3 μA
0.6 μA
4 μA
VOUT
TP2111
10 kHz
TP2111
18 kHz
TP2121
150 kHz
TP1511
Single
With Shut-down TP2111N TP2121N TP1511N
Dual
TP2112
TP2114
TP2122
TP2124
TP1512
TP1514
R2
R1
Quad
R
1
VOUT ICC R3 ( 1)
R2
TP2111 in Low Side Battery Current Sensor
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Pin Configuration(Top View)
TP2111N
6-Pin SOT23
(-T Suffix)
TP2111
5-Pin SOT23/SC70
(-T and -C Suffixes)
TP2112
8-Pin SOIC/MSOP
(-S and -V Suffixes)
TP2114
14-Pin SOIC/TSSOP
(-S and -T Suffixes)
1
2
3
4
5
6
7
14
Out A
﹣In A
﹢In A
﹢Vs
Out D
1
2
3
5
1
2
3
6
5
4
﹢Vs
SHDN
-In
1
2
3
4
8
7
6
5
Out
Out
﹣Vs
+In
Out A
﹢Vs
﹢Vs
13 ﹣In D
﹣In A
Out B
﹣In B
﹢In B
﹣Vs
A
A
B
D
C
12
11
﹢In D
﹣Vs
+In
4
-In
﹢In A
﹣Vs
B
10 ﹢In C
﹢In B
﹣In B
Out B
TP2111
8-Pin SOIC
(-S Suffix)
TP2111N
8-Pin MSOP/SOIC
(-V and -S Suffixes)
9
8
﹣In C
Out C
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
NC
﹣In
﹢In
﹣Vs
NC
NC
﹣In
﹢In
﹣Vs
SHDN
﹢Vs
Out
NC
﹢Vs
Out
NC
Order Information
Marking
Model Name
Order Number
Package
Transport Media, Quantity
Information
B1TYW (1)
B1CYW (1)
2111S
TP2111-TR
TP2111-CR
TP2111-SR
TP2111N-TR
TP2111N-VR
TP2111N-SR
TP2112-SR
TP2112-VR
TP2114-SR
TP2114-TR
5-Pin SOT23
5-Pin SC70
8-Pin SOIC
6-Pin SOT23
8-Pin MSOP
8-Pin SOIC
8-Pin SOIC
8-Pin MSOP
14-Pin SOIC
14-Pin TSSOP
Tape and Reel, 3,000
Tape and Reel, 3,000
Tape and Reel, 4,000
Tape and Reel, 3,000
Tape and Reel, 3,000
Tape and Reel, 4,000
Tape and Reel, 4,000
Tape and Reel, 3,000
Tape and Reel, 2,500
Tape and Reel, 3,000
TP2111
B1NYW (1)
TP2111N
2111N
2111NS
B12S
TP2112
TP2114
B12V
B14S
B14T
Note (1): ‘YW’ is date coding scheme. 'Y' stands for calendar year, and 'W' stands for single workweek coding scheme.
Note 1
Absolute Maximum Ratings
Supply Voltage: V+ – V–....................................6.0V
Input Voltage............................. V– – 0.3 to V+ + 0.3
Input Current: +IN, –IN, SHDN Note 2.............. ±10mA
SHDN Pin Voltage……………………………V– to V+
Output Current: OUT.................................... ±20mA
Output Short-Circuit Duration Note 3…......... Indefinite
Operating Temperature Range.......–40°C to 125°C
Maximum Junction Temperature................... 150°C
Storage Temperature Range.......... –65°C to 150°C
Lead Temperature (Soldering, 10 sec) ......... 260°C
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum
Rating condition for extended periods may affect device reliability and lifetime.
Note 2: The inputs are protected by ESD protection diodes to each power supply. If the input extends more than 500mV beyond the power supply, the input
current should be limited to less than 10mA.
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Note 3: A heat sink may be required to keep the junction temperature below the absolute maximum. This depends on the power supply voltage and how many
amplifiers are shorted. Thermal resistance varies with the amount of PC board metal connected to the package. The specified values are for short traces
connected to the leads.
ESD, Electrostatic Discharge Protection
Symbol
HBM
Parameter
Human Body Model ESD
Charged Device Model ESD
Condition
Minimum Level
Unit
kV
kV
MIL-STD-883H Method 3015.8
JEDEC-EIA/JESD22-C101E
8
2
CDM
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
5V Electrical Characteristics
The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 27° C.
VSUPPLY = 5V, VCM = VOUT = VSUPPLY/2, RL = 100KΩ, CL =60pF, VSHDN is unconnected.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VOS
VOS TC
Input Offset Voltage
Input Offset Voltage Drift
VCM = VDD/2
●
-1.5
± 0.1
0.4
0.1
78
4.5
0.1
10
265
> 100
2.9
5
+1.5
mV
μV/° C
fA
TA=27 °C
TA=85 °C
TA=125 °C
IB
Input Bias Current
fA
pA
fA
IOS
Vn
en
Input Offset Current
Input Voltage Noise
Input Voltage Noise Density
Input Resistance
f = 0.1Hz to 10Hz
f = 1kHz
μVP-P
nV/√Hz
GΩ
RIN
Differential
Common Mode
VCM = 0.1V to 4.9V
CIN
Input Capacitance
pF
dB
V
CMRR
VCM
Common Mode Rejection Ratio
Common-mode Input Voltage
Range
●
●
80
130
V––0.3
V++0.3
PSRR
AVOL
Power Supply Rejection Ratio
●
●
●
60
80
80
90
120
120
5
0.4
2.6
20
dB
dB
dB
mV
Ω
Ω
mA
V
VOUT = 2.5V, RLOAD = 100kΩ
VOUT = 0.1V to 4.9V, RLOAD = 100kΩ
RLOAD = 100kΩ
G = 1, f = 1kHz, IOUT = 0
f = 1kHz, IOUT = 0
Open-Loop Large Signal Gain
VOL, VOH
ROUT
RO
ISC
VDD
Output Swing from Supply Rail
Closed-Loop Output Impedance
Open-Loop Output Impedance
Output Short-Circuit Current
Supply Voltage
Sink or source current
1.8
6.0
IQ
PM
GM
GBWP
Quiescent Current per Amplifier
Phase Margin
Gain Margin
●
300
64
-10
500
nA
°
dB
kHz
RLOAD = 100kΩ, CLOAD = 60pF
RLOAD = 100kΩ, CLOAD = 60pF
f = 1kHz
Gain-Bandwidth Product
10
Settling Time, 1.5V to 3.5V, Unity 0.1%
0.5
Gain
0.01%
0.1%
0.01%
0.55
0.075
0.078
tS
ms
Settling Time, 2.45V to 2.55V,
Unity Gain
AV = 1, VOUT = 1.5V to 3.5V, CLOAD
60pF, RLOAD = 100kΩ
2VP-P
=
SR
Slew Rate
6
mV/μs
FPBW
IQ(off)
Full Power Bandwidth Note 2
Supply Current in Shutdown Note 1
300
3
Hz
nA
VSHDN = 0.5V
VSHDN = 1.5V
VSHDN = 0V, VOUT = 0V
VSHDN = 0V, VOUT = 5V
Disable
-10
-10
-3.6
3.6
ISHDN
ILEAK
Shutdown Pin Current Note 1
pA
pA
Output Leakage Current in
Shutdown Note 1
SHDN Input Low Voltage Note 1
SHDN Input High Voltage Note 1
VIL
VIH
●
●
0.5
V
V
Enable
1.0
Note 1: Specifications apply to the TP2111N with shutdown.
Note 2: Full power bandwidth is calculated from the slew rate FPBW = SR/π • VP-P.
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Typical Performance Characteristics
Small-Signal Step Response, 100mV Step
Large-Signal Step Response, 2V Step
4
3
2
1
2.60
2.55
Gain=+1
VIN Step=100mV
CLOAD=60pF
Gain=+1
CLOAD=60pF
RLOAD=100kΩ
2.50
2.45
2.40
3
5
7
9
2
5
8
11
3ms/div
2ms/div
Open-Loop Gain and Phase
Phase Margin vs. CLOAD (Stable for Any CLOAD)
80
150
100
50
Gain=+1
RLOAD=100kΩ
60
40
20
0
Phase
Gain
Gain=1
RLOAD=100kΩ
CLOAD=60pF
0
-50
1E-3
1E-1
1E+1
1E+3
1E+5
1E+7
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
1E+6
Load Capacitance (pF)
FREQUENCY (Hz)
Input Voltage Noise Spectral Density
Common-Mode Rejection Ratio
150
120
90
10k
1k
60
100
30
1E-1
1E+0
1E+1
1E+2
1E+3
1E-3
1E-1
1E+1
1E+3
1E+5
1E+7
Frequency (Hz)
FREQUENCY (Hz)
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Typical Performance Characteristics
Over-Shoot Voltage, CLOAD = 40nF, Gain = +1, RFB=100kΩ
Over-Shoot % vs. CLOAD, Gain = +1, RFB = 1MΩ
2.6
60%
Gain=+1
VIN Step=200mV
50%
40%
30%
20%
10%
0%
2.55
Overshoot
2.5
2.45
2.4
Gain=+1
VIN Step=100mV
CLOAD=40nF
Undershoot
2
4
6
8
10
1E+1
1E+2
1E+3
1E+4
1E+5
1E+6
1E+7
2ms/div
Load Capacitance (pF)
Over-Shoot Voltage, CLOAD=40nF, Gain= -1, RFB=100kΩ
Over-Shoot % vs. CLOAD, Gain = -1, RFB = 1MΩ
2.6
60%
Gain=-1
50%
VIN Step=200mV
Undershoot
2.55
40%
30%
Gain=-1
2.5
VIN Step=100mV
CLOAD=40nF
Overshoot
20%
10%
0%
2.45
2.4
6
8
10
12
14
1E+0
1E+2
1E+4
1E+6
Load Capacitance (pF)
2ms/div
Power-Supply Rejection Ratio
VIN = -0.2V to 5.7V, No Phase Reversal
80
60
40
20
0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-1.0
PSRRP
PSRRN
0
10
20
30
40
50
60
1E-3
1E-2
1E-1 1E+0 1E+1 1E+2 1E+3 1E+4 1E+5
Frequency (Hz)
TIME (ms)
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Typical Performance Characteristics
Quiescent Supply Current vs. Temperature
Open-Loop Gain vs. Temperature
400.0
130
350.0
300.0
250.0
200.0
120
110
100
-40 -20
0
20
40
60
80 100
-40 -20
0
20
40
60
80
100
TEMPERATURE (OC)
TEMPERATURE (OC)
Quiescent Supply Current vs. Supply Voltage
Short-Circuit Current vs. Supply Voltage
30
25
20
15
10
5
400.0
350.0
85OC
27OC
300.0
-40OC
250.0
200.0
0
1.6
2.6
3.6
4.6
1.8
2.8
3.8
4.8
POWER SUPPLY VOLTAGE (V)
POWER SUPPLY VOLTAGE (V)
Input Offset Voltage Distribution
Input Offset Voltage vs. Common Mode Input Voltage
60%
50%
40%
30%
20%
10%
0%
0.4
Production Package Units
2000 Samples
0.3
0.2
0.1
0
TA = 125°C
TA = -40°C
TA = 27°C
-0.1
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
0.5
-2
-1.5 -1
-0.5
1
1.5
Common Mode Input Voltage (V)
Input Offset Voltage (mV)
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Typical Performance Characteristics
Closed-Loop Output Impedance vs. Frequency
0.1Hz to 10Hz Time Domain Output Voltage Noise
10
8
100k
10k
1k
6
4
2
0
100
10
-2
-4
-6
-8
-10
1
1
10
100
1k
10k
-6
-4
-2
0
2
4
6
TIME(Seconds)
FREQUENCY (Hz)
Pin Functions
–
–IN: Inverting Input of the Amplifier. Voltage range of
this pin can go from V– – 0.3V to V+ + 0.3V.
V– or VS: Negative Power Supply. It is normally
tied to ground. It can also be tied to a voltage other
than ground as long as the voltage between V+ and
V– is from 1.8V to 5.5V. If it is not connected to
ground, bypass it with a capacitor of 0.1μF as close
to the part as possible.
+IN: Non-Inverting Input of Amplifier. This pin has the
same voltage range as –IN.
V+ or +VS: Positive Power Supply. Typically the voltage
is from 1.8V to 5.5V. Split supplies are possible as long
as the voltage between V+ and V– is between 1.8V and
5.5V. A bypass capacitor of 0.1μF as close to the part as
possible should be used between power supply pins or
between supply pins and ground.
SHDN: Active Low Shutdown. Shutdown threshold
is 1.0V above negative supply rail. If unconnected,
the amplifier is automatically enabled.
OUT: Amplifier Output. The voltage range extends
to within milli-volts of each supply rail.
N/C: No Connection.
Operation
The TP211x family input signal range extends beyond
the negative and positive power supplies. The output
can even extend all the way to the negative supply. The
input stage is comprised of two CMOS differential
amplifiers, a PMOS stage and NMOS stage that are
active over different ranges of common mode input
voltage. The Class-AB control buffer and output bias
stage uses a proprietary compensation technique to
take full advantage of the process technology to drive
very high capacitive loads. This is evident from the
transient over shoot measurement plots in the Typical
Performance Characteristics.
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Applications Information
Low Supply Voltage and Low Power Consumption
The TP211x family of operational amplifiers can operate with power supply voltages from 1.8V to 6.0V. Each amplifier
draws only 300nA quiescent current. The low supply voltage capability and low supply current are ideal for portable
applications demanding HIGH CAPACITIVE LOAD DRIVING CAPABILITY and CONSTANT WIDE BANDWIDTH. The
TP211x family is optimized for wide bandwidth low power applications. They have an industry leading high GBWP to
power ratio and are unity gain stable for 1,000nF capacitive load. When the load capacitance increases, the increased
capacitance at the output pushed the non-dominant pole to lower frequency in the open loop frequency response,
lowering the phase and gain margin. Higher gain configurations tend to have better capacitive drive capability than
lower gain configurations due to lower closed loop bandwidth and hence higher phase margin.
Low Input Referred Noise
The TP211x family provides a low input referred noise density of 265nV/√Hz at 1kHz. The voltage noise will grow
slowly with the frequency in wideband range, and the input voltage noise is typically 10μVP-P at the frequency of 0.1Hz
to 10Hz.
Low Input Offset Voltage
The TP211x family has a low offset voltage of 1.5mV maximum which is essential for precision applications. The offset
voltage is trimmed with a proprietary trim algorithm to ensure low offset voltage for precision signal processing
requirement.
Low Input Bias Current
The TP211x family is a CMOS OPA family and features very low input bias current in fA range. The low input bias
current allows the amplifiers to be used in applications with high resistance sources. Care must be taken to minimize
PCB Surface Leakage. See below section on “PCB Surface Leakage” for more details.
PCB Surface Leakage
In applications where low input bias current is critical, Printed Circuit Board (PCB) surface leakage effects need to be
considered. Surface leakage is caused by humidity, dust or other contamination on the board. Under low humidity
conditions, a typical resistance between nearby traces is 1012Ω. A 5V difference would cause 5pA of current to flow,
which is greater than the TP211x OPA’s input bias current at +27°C (±0.1fA, typical). It is recommended to use
multi-layer PCB layout and route the OPA’s -IN and +IN signal under the PCB surface.
The effective way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). The guard ring is
biased at the same voltage as the sensitive pin. An example of this type of layout is shown in Figure 1 for Inverting
Gain application.
1. For Non-Inverting Gain and Unity-Gain Buffer:
a) Connect the non-inverting pin (VIN+) to the input with a wire that does not touch the PCB surface.
b) Connect the guard ring to the inverting input pin (VIN–). This biases the guard ring to the Common Mode input voltage.
2. For Inverting Gain and Trans-impedance Gain Amplifiers (convert current to voltage, such as photo detectors):
a) Connect the guard ring to the non-inverting input pin (VIN+). This biases the guard ring to the same reference voltage as
the op-amp (e.g., VDD/2 or ground).
b) Connect the inverting pin (VIN–) to the input with a wire that does not touch the PCB surface.
Guard Ring
VI N +
VI N -
+VS
Figure 1
Ground Sensing and Rail to Rail Output
The TP211x family has excellent output drive capability, delivering over 10mA of output drive current. The output stage
is a rail-to-rail topology that is capable of swinging to within 5mV of either rail. Since the inputs can go 300mV beyond
either rail, the op-amp can easily perform ‘true ground’ sensing.
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
The maximum output current is a function of total supply voltage. As the supply voltage to the amplifier increases, the
output current capability also increases. Attention must be paid to keep the junction temperature of the IC below 150°C
when the output is in continuous short-circuit. The output of the amplifier has reverse-biased ESD diodes connected to
each supply. The output should not be forced more than 0.5V beyond either supply, otherwise current will flow through
these diodes.
ESD
The TP211x family has reverse-biased ESD protection diodes on all inputs and output. Input and out pins can not be
biased more than 300mV beyond either supply rail.
Shut-down
The single channel OPA versions have SHDN pins that can shut down the amplifier to typical 3nA supply current. The
SHDN pin voltage needs to be within 0.5V of V– for the amplifier to shut down. During shutdown, the output will be in
high output resistance state, which is suitable for multiplexer applications. When left floating, the SHDN pin is internally
pulled up to the positive supply and the amplifier remains enabled.
Driving Large Capacitive Load
The TP211x family of OPA is designed to drive large capacitive loads. Refer to Typical Performance Characteristics
for “Phase Margin vs. Load Capacitance”. As always, larger load capacitance decreases overall phase margin in a
feedback system where internal frequency compensation is utilized. As the load capacitance increases, the feedback
loop’s phase margin decreases, and the closed-loop bandwidth is reduced. This produces gain peaking in the
frequency response, with overshoot and ringing in output step response. The unity-gain buffer (G = +1V/V) is the most
sensitive to large capacitive loads.
When driving large capacitive loads with the TP211x OPA family (e.g., > 200 pF when G = +1V/V), a small series
resistor at the output (RISO in Figure 2) improves the feedback loop’s phase margin and stability by making the output
load resistive at higher frequencies.
RISO
VOUT
TP211x
VIN
CLOAD
Figure 2
Power Supply Layout and Bypass
The TP211x OPA’s power supply pin (VDD for single-supply) should have a local bypass capacitor (i.e., 0.01μF to
0.1μF) within 2mm for good high frequency performance. It can also use a bulk capacitor (i.e., 1μF or larger) within
100mm to provide large, slow currents. This bulk capacitor can be shared with other analog parts.
Ground layout improves performance by decreasing the amount of stray capacitance and noise at the OPA’s inputs
and outputs. To decrease stray capacitance, minimize PC board lengths and resistor leads, and place external
components as close to the op amps’ pins as possible.
Proper Board Layout
To ensure optimum performance at the PCB level, care must be taken in the design of the board layout. To avoid
leakage currents, the surface of the board should be kept clean and free of moisture. Coating the surface creates a
barrier to moisture accumulation and helps reduce parasitic resistance on the board.
Keeping supply traces short and properly bypassing the power supplies minimizes power supply disturbances due to
output current variation, such as when driving an ac signal into a heavy load. Bypass capacitors should be connected
as closely as possible to the device supply pins. Stray capacitances are a concern at the outputs and the inputs of the
amplifier. It is recommended that signal traces be kept at least 5mm from supply lines to minimize coupling.
A variation in temperature across the PCB can cause a mismatch in the Seebeck voltages at solder joints and other
points where dissimilar metals are in contact, resulting in thermal voltage errors. To minimize these thermocouple
effects, orient resistors so heat sources warm both ends equally. Input signal paths should contain matching numbers
and types of components, where possible to match the number and type of thermocouple junctions. For example,
dummy components such as zero value resistors can be used to match real resistors in the opposite input path.
Matching components should be located in close proximity and should be oriented in the same manner. Ensure leads
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10
Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
are of equal length so that thermal conduction is in equilibrium. Keep heat sources on the PCB as far away from
amplifier input circuitry as is practical.
The use of a ground plane is highly recommended. A ground plane reduces EMI noise and also helps to maintain a
constant temperature across the circuit board.
BATTERY CURRENT SENSING
The Common Mode Input voltage Range of TP211x OPA series, which goes 0.3V beyond both supply rails, supports
their use in high-side and low-side battery current sensing applications. The low quiescent current (300nA, typical)
helps prolong battery life, and the rail-to-rail output supports detection of low currents.
The battery current (IDD) through the 10Ω resistor causes its top terminal to be more negative than the bottom terminal.
This keeps the Common Mode Input voltage below VDD, which is within its allowed range. The output of the OPA will
also be blow VDD, within its Maximum Output Voltage Swing specification.
10Ω
To Load
R3
VOUT
DC
TP2111
R2
100kΩ
R1
1MΩ
VDD VOUT
IDD
R1
R3
R2
Figure 3
Instrumentation Amplifier
The TP211x OPA series is well suited for conditioning sensor signals in battery-powered applications. Figure 4 shows
a two op-amp instrumentation amplifier, using the TP211x OPA.
The circuit works well for applications requiring rejection of Common Mode noise at higher gains. The reference
voltage (VREF) is supplied by a low-impedance source. In single voltage supply applications, VREF is typically VDD/2.
RG
R1
R2
R2
R1
VREF
VOUT
½ TP2112
½ TP2112
V1
V2
R
2R
1 ) VREF
R2 RG
1
VOUT =(V V2 )(1
1
Figure 4
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11
Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Buffered Chemical Sensor (pH) Probe
The TP211x OPA has input bias current in the fA range. This is ideal in buffering high impedance chemical sensors
such as pH probe. As an example, the circuit in Figure 5 eliminates expansive low-leakage cables that that is
required to connect pH probe to metering ICs such as ADC, AFE and/or MCU. A TP211x OPA and a lithium battery
are housed in the probe assembly. A conventional low-cost coaxial cable can be used to carry OPA’s output signal to
subsequent ICs for pH reading.
BATTERY
3V
(DURACELL
DL1620)
GENERAL PURPOSE
COMBINATION
pH PROBE
COAX
(CORNING 476540)
TP211x
R1
10MΩ
To
pH
PROBE
ADC/AFE/MCU
R2
10MΩ
ALL COMPONENTS CONTAJNED WITHIN THE pH PROBE
Figure 5: Buffer pH Probe
Portable Gas Sensor Amplifier
Gas sensors are used in many different industrial and medical applications. Gas sensors generate a current that is
proportional to the percentage of a particular gas concentration sensed in an air sample. This output current flows
through a load resistor and the resultant voltage drop is amplified. Depending on the sensed gas and sensitivity of the
sensor, the output current can be in the range of tens of microamperes to a few milli-amperes. Gas sensor datasheets
often specify a recommended load resistor value or a range of load resistors from which to choose.
There are two main applications for oxygen sensors – applications which sense oxygen when it is abundantly present
(that is, in air or near an oxygen tank) and those which detect traces of oxygen in parts-per-million concentration. In
medical applications, oxygen sensors are used when air quality or oxygen delivered to a patient needs to be monitored.
In fresh air, the concentration of oxygen is 20.9% and air samples containing less than 18% oxygen are considered
dangerous. In industrial applications, oxygen sensors are used to detect the absence of oxygen; for example,
vacuum-packaging of food products.
The circuit in Figure 6 illustrates a typical implementation used to amplify the output of an oxygen detector. With the
components shown in the figure, the circuit consumes less than 300nA of supply current ensuring that small
form-factor single- or button-cell batteries (exhibiting low mAh charge ratings) could last beyond the operating life of
the oxygen sensor. The precision specifications of these amplifiers, such as their low offset voltage, low VOS TC, low
input bias current, high CMRR, and high PSRR are other factors which make these amplifiers excellent choices for this
application.
10MΩ
1%
100kΩ
1%
VOUT
TP211x
Oxygen Sensor
City Technology
4OX2
100kΩ
1%
I
100Ω
1%
O2
VOUT 1Vin Air ( 21% O2 )
IDD 0.7uA
Figure 6
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Package Outline Dimensions
SOT23-5 / SOT23-6
D
A2
A1
θ
L1
e
Dimensions
Dimensions
In Inches
In Millimeters
Symbol
Min
Max
Min
Max
A1
A2
b
0.000
1.050
0.300
2.820
1.500
2.650
0.100
1.150
0.400
3.020
1.700
2.950
0.000
0.041
0.012
0.111
0.059
0.104
0.004
0.045
0.016
0.119
0.067
0.116
E1
D
E
E
E1
e
0.950TYP
0.037TYP
e1
L1
θ
1.800
0.300
0°
2.000
0.460
8°
0.071
0.012
0°
0.079
0.024
8°
b
e1
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Package Outline Dimensions
SC-70-5 (SOT353)
D
A2
C
A1
θ
L1
e
Dimensions
Dimensions In
Inches
In Millimeters
Symbol
Min
Max
Min
Max
A1
A2
b
0.000
0.900
0.150
0.080
2.000
1.150
2.150
0.100
1.000
0.350
0.150
2.200
1.350
2.450
0.000
0.035
0.006
0.003
0.079
0.045
0.085
0.004
0.039
0.014
0.006
0.087
0.053
0.096
E1
C
D
E
E
E1
e
0.650TYP
0.026TYP
e1
L1
θ
1.200
0.260
0°
1.400
0.460
8°
0.047
0.010
0°
0.055
0.018
8°
b
e1
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Package Outline Dimensions
SO-8 (SOIC-8)
A2
C
θ
L1
A1
e
E
D
Dimensions
Dimensions In
Inches
In Millimeters
Symbol
Min
Max
Min
Max
A1
A2
b
0.100
1.350
0.330
0.190
4.780
3.800
5.800
0.250
1.550
0.510
0.250
5.000
4.000
6.300
0.004
0.053
0.013
0.007
0.188
0.150
0.228
0.010
0.061
0.020
0.010
0.197
0.157
0.248
E1
C
D
E
E1
e
1.270TYP
0.050TYP
L1
θ
0.400
0°
1.270
8°
0.016
0.050
8°
b
0°
Package Outline Dimensions
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
MSOP-8
Dimensions
Dimensions In
Inches
In Millimeters
Symbol
Min
Max
Min
Max
E
A
0.800
0.000
0.760
0.30 TYP
0.15 TYP
2.900
0.65 TYP
2.900
4.700
0.410
0°
1.200
0.200
0.970
0.031
0.000
0.030
0.012 TYP
0.006 TYP
0.114
0.026
0.114
0.185
0.016
0°
0.047
0.008
0.038
E1
A1
A2
b
C
D
3.100
0.122
e
b
e
E
3.100
5.100
0.650
6°
0.122
0.201
0.026
6°
D
E1
L1
θ
A1
R1
R
θ
L
L1
L2
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Package Outline Dimensions
SO-14 (SOIC-14)
D
Dimensions
In Millimeters
TYP
Symbol
MIN
1.35
0.10
1.25
0.36
8.53
5.80
3.80
MAX
1.75
0.25
1.65
0.49
8.73
6.20
4.00
A
A1
A2
b
1.60
E1
E
0.15
1.45
D
8.63
6.00
e
b
E
E1
e
3.90
1.27 BSC
0.60
L
0.45
0°
0.80
8°
A2
A
L1
L2
θ
1.04 REF
0.25 BSC
A1
L
L1
θ
L2
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Nanopower 300nA, 1.8V, Rail-to-Rail Input/Output Op-amps
Package Outline Dimensions
TSSOP-14
Dimensions
In Millimeters
E1
E
Symbol
MIN
-
TYP
MAX
1.20
0.15
1.05
0.28
0.19
5.06
6.60
4.50
A
A1
A2
b
-
0.05
0.90
0.20
0.10
4.86
6.20
4.30
-
1.00
-
e
c
c
-
4.96
D
D
E
6.40
E1
e
4.40
0.65 BSC
0.60
L
0.45
0.75
A1
L1
L2
R
1.00 REF
0.25 BSC
-
0.09
0°
-
R1
θ
-
8°
R
θ
L
L1
L2
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