关闭背景特效

AP10P10GJ-HF [A-POWER]

Fast Switching Characteristic;

AP10P10GJ-HF


元器件型号：	AP10P10GJ-HF
生产厂家：	ADVANCED POWER ELECTRONICS CORP.
描述和应用：	Fast Switching Characteristic
PDF文件：	总5页 (文件大小：106K)
下载文档：	下载PDF数据表文档文件
型号参数：AP10P10GJ-HF参数

AP10P10GK-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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25 A-POWER

AP1100

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3

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40 ETC

AP1100

Transistor,

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1 APITECH

AP1101

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3

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28 ETC

AP1102

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 5A I(C) | TO-5

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26 ETC

AP1103

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 5A I(C) | TO-5

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13 ETC

AP1104

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 4A I(C) | TO-66

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8 ETC

AP1105

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-46

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48 ETC

AP1106

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-5

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9 ETC

AP1107

TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-66

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8 ETC

AP110-79

RF Amplifier

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27 ETC

AP1108

TRANSISTOR | BJT | PNP | 110V V(BR)CEO | 15A I(C) | TO-3

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10 ETC

AP1109

TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 90A I(C) | TO-114

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18 ETC

AP1110

TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 70A I(C) | TO-114

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546 ETC

AP1110

AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT (Bluetooth) Class1 applications. The main features of AP1110 involve 2x2 compact profile; signal gain at 26 dB; typical power of 23dBm and PAE of 40% for BT Class1 under 3.3V. It is housed in a 2 x 2 (mm), 8-pin, and DFN leadless package.

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1036 RFMD

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