AP60T03GS [A-POWER]
Simple Drive Requirement, Low Gate Charge; 简单的驱动要求,低栅极电荷型号: | AP60T03GS |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | Simple Drive Requirement, Low Gate Charge |
文件: | 总6页 (文件大小:206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP60T03GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
30V
12mΩ
45A
▼ Low Gate Charge
▼ Fast Switching Speed
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
TO-263(S)
TO-220(P)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T03GP)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
45
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
32
A
120
A
PD@TC=25℃
Total Power Dissipation
44
W
Linear Derating Factor
0.352
-55 to 175
-55 to 175
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3.4
62
Rthj-a
Data and specifications subject to change without notice
1
200809253
AP60T03GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
0.03
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
-
12
V
GS=4.5V, ID=15A
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance2
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=30V, VGS=0V
3
25
-
-
S
IDSS
Drain-Source Leakage Current
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
Drain-Source Leakage Current (Tj=175oC) VDS=24V ,VGS=0V
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V
ID=20A
-
+100
11.6
3.9
7
19
-
Qgs
Qgd
td(on)
tr
VDS=24V
VGS=4.5V
VDS=15V
-
8.8
57.5
18.5
6.4
-
ID=20A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1135 1816
VDS=25V
200
135
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=45A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
V
ns
nC
23.3
16
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP60T03GS/P
125
100
75
50
25
0
90
60
30
0
10V
8.0V
T C =175 o C
10V
8.0V
T C =25 o C
6.0V
5.0V
6.0V
5.0V
V G =4.0V
V G =4.0V
0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
1.6
1.2
0.8
0.4
80
60
40
20
0
I D =20A
V G =10V
I D =15A
T
C =25 ℃
Ω
2
4
6
8
10
-50
25
100
175
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
2
1
0
100
10
1
T j =175 o C
T j =25 o C
0.1
-50
25
100
175
0
0.5
1
1.5
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP60T03GS/P
f=1.0MHz
10000
1000
100
12
I D =20A
9
V DS =16V
DS =20V
V
V
DS =24V
C iss
6
3
0
C oss
C rss
1
8
15
22
29
0
6
12
18
24
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
0.2
0.1
100
10
1
0.1
100us
0.05
PDM
0.02
t
1ms
T
0.01
10ms
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
T C =25 o C
100ms
Single Pulse
DC
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
E3
SYMBOLS
Millimeters
E1
E2
MIN
4.25
0.00
2.20
0.70
1.07
0.30
1.15
8.30
NOM
4.75
0.15
2.45
0.90
1.27
0.45
1.30
8.90
MAX
A
A1
A2
b
5.20
0.30
2.70
1.10
1.47
0.60
1.45
9.40
D1
D
b1
c
c1
D
b1
b
D1
E
---- 5.10(ref) ----
9.70 10.10 10.50
L2
L3
E1
E2
E3
e
---- 7.40(ref) ----
---- 6.40(ref) ----
---- 8.00(ref) ----
2.04
2.54
3.04
e
L4
A2
L1
L2
L3
L4
θ
---- 2.54(ref) ----
-----
4.50
-----
0°
1.50
4.90
1.50
-----
-----
5.30
----
5°
A
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
θ
c1
A1
L1
Part Marking Information & Packing : TO-263
Part Number
Package Code
60T03GS
meet Rohs requirement
for low voltage MOSFET only
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E
A
E1
Millimeters
SYMBOLS
φ
MIN
NOM
4.60
0.88
8.80
0.43
MAX
A
b
4.40
0.76
8.60
0.36
4.80
1.00
9.00
0.50
L5
L1
c1
D
c
E
9.80 10.10 10.40
14.70 15.00 15.30
D1
L4
L5
D1
c1
b1
L
6.20
6.40
5.10 REF.
1.35
6.60
D
L4
1.25
1.17
1.45
1.47
1.32
13.25 13.75 14.25
2.54 REF.
b1
e
L1
φ
E1
2.60
3.71
2.75
3.84
2.89
3.96
L
7.4 REF,
c
b
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
meet Rohs requirement
Package Code
60T03GP
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
6
相关型号:
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