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AP60T10GS [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP60T10GS
型号： AP60T10GS
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
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中文：  中文翻译
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AP60T10GS/P  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
100V  
18mΩ  
67A  
▼ Lower On-resistance  
▼ Fast Switching Characteristic  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
TO-220(P)  
TO-263(S)  
D
S
The TO-263 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP60T10GP)  
are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
100  
+20  
67  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
A
ID@TC=100℃  
42  
A
IDM  
250  
167  
288  
A
PD@TC=25℃  
Total Power Dissipation  
W
mJ  
℃
℃
EAS  
TSTG  
TJ  
Single Pulse Avalanche Energy3  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)4  
Maixmum Thermal Resistance, Junction-ambient  
0.75  
40  
Rthj-a  
Rthj-a  
62  
Data and specifications subject to change without notice  
1
200911104  
AP60T10GS/P  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=28A  
VGS=0V, ID=250uA  
100  
-
-
-
-
18  
5
V
mΩ  
V
-
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
2
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=25V, ID=28A  
VDS=80V, VGS=0V  
VGS= +20V, VDS=0V  
ID=28A  
-
-
-
-
-
-
-
-
-
-
-
-
-
45  
-
-
S
IDSS  
IGSS  
Qg  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
25  
-
+100  
55  
15  
24  
16  
68  
29  
42  
90  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=80V  
VGS=10V  
-
VDS=50V  
-
ID=28A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=2.5Ω,VGS=10V  
RD=1.8Ω  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
VGS=0V  
2800 4500  
Output Capacitance  
Reverse Transfer Capacitance  
VDS=25V  
400  
155  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
IS=28A, VGS=0V  
IS=28A, VGS=0V  
dI/dt=100A/µs  
Min. Typ. Max. Units  
V
VSD  
trr  
-
-
-
-
1.3  
ns  
80  
-
-
nC  
Qrr  
Reverse Recovery Charge  
270  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=24A.  
4.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP60T10GS/P  
200  
160  
120  
80  
100  
80  
60  
40  
20  
0
T C = 150 o  
C
T C = 25 o  
C
10V  
9.0V  
8.0V  
10 V  
9.0V  
8.0V  
7.0V  
7.0V  
V G = 6.0 V  
40  
V G = 6 .0V  
0
0
2
4
6
8
10  
0
2
4
6
8
10  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.2  
1.1  
1
2.4  
I D = 28A  
V
G = 10V  
2.0  
1.6  
1.2  
0.8  
0.4  
0.9  
0.8  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
T j , Junction Temperature ( o C)  
Fig 3. Normalized BVDSS v.s. Junction  
Temperature  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.2  
0.8  
0.4  
0.0  
30  
20  
10  
0
T j =150 o  
C
T j =25 o  
C
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP60T10GS/P  
f=1.0MHz  
4000  
3000  
2000  
1000  
0
12  
I D = 28 A  
10  
V DS = 50 V  
DS = 60 V  
V
V
DS = 80 V  
C iss  
8
6
4
2
0
C oss  
C rss  
0
20  
40  
60  
80  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS ,Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
Operation in this  
area limited by  
RDS(ON)  
0.2  
0.1  
100us  
0.1  
0.05  
PDM  
1ms  
t
0.02  
T
0.01  
10ms  
100ms  
T c =25 o C  
Duty factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
DC  
0.01  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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