SI9122E [VISHAY]
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers; 集成二级同步整流驱动器的500 kHz的半桥DC / DC控制器
| 型号： | SI9122E |
| 厂家： | 
VISHAY |
| 描述： | 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers |
| 文件： | 总20页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si9122E
Vishay Siliconix
500-kHz Half-Bridge DC/DC Controller
with Integrated Secondary Synchronous Rectification Drivers
DESCRIPTION
FEATURES
•
•
•
•
•
•
92 % primary/secondary duty cycle
135 °C over temperature protection
Compatible with ETSI 300 132-2
28 V to 75 V input voltage range
Integrated 1 A half bridge primary drivers
Secondary synchronous rectifier control signals with
programmable deadtime delay
Voltage mode control
Si9122E is a half-bridge controller IC ideally suited to fixed
telecom applications where high efficiency is required at low
output voltages (e.g. < 3.3 V). Designed to operate within the
fixed telecom voltage range of 36 V to 75 V, the IC is capable
of controlling and driving both the low and high-side switching
devices of a half bridge circuit and also controlling the
switching devices on the secondary side of the bridge. Due
to the very low on-resistance of the secondary MOSFETs, a
significant increase in conversion efficiency can be achieved
as compared with conventional Schottky diodes. Control of
the secondary devices is by means of a pulse transformer
and a pair of inverters. Such a system has efficiencies well in
excess of 90 % even for low output voltages.
RoHS
COMPLIANT
•
•
•
•
•
•
Voltage feedforward compensation
High voltage pre-regulator operates during start-up
Current sensing on low-side primary device
Frequency foldback eliminates constant current tail
Advanced maximum current control during start-up and
shorted load
On-chip control of the dead time delays between the primary
and secondary synchronous signals keep efficiencies high
and prevent shorting of the power transformer. An external
resistor sets the oscillator frequency from 200 kHz to
500 kHz.
•
Low input voltage detection
• Programmable soft-start function
Si9122E has advanced current monitoring and control
circuitry which allow the user to set the maximum current in
the primary circuit. Such a feature acts as protection against
output shorting and also provides constant current into large
capacitive loads during start-up or when paralleling power
supplies. Current sensing is by means of a sense resistor on
the low-side primary device.
APPLICATIONS
•
•
•
•
Network cards
Power supply modules
Distributed power systems
Intermediate bus converter
• Brick converter
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
36 V to 75 V
BST
Synchronous
Rectifiers
DH
LX
1 V to 12 V Typ.
+
V
Si9122E
OUT
DL
-
CS2
V
INDET
CS1
SR
H
C
Error
Amplifier
L_CONT
V
CC
SR
L
+
-
V
REF
EP
Opto Isolator
Figure 1.
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
www.vishay.com
1
Si9122E
Vishay Siliconix
TECHNICAL DESCRIPTION
Si9122E is a voltage mode controller for the half-bridge
topology. With 100 V depletion mode MOSFET, the Si9122E
is capable of powering directly from the high voltage bus to
VCC through an external PNP pass transistor, or may be
powered through an external regulator directly through the
VCC pin. With PWM control, Si9122E provides peak
efficiency throughout the entire line and load range. In order
to simplify the design of efficient secondary synchronous
rectification circuitry, the Si9122E provides intelligent gate
drive signals to control the secondary MOSFETs. With
independent gate drive signals from the controller,
transformer design is no longer limited by the gate to source
rating of the secondary-side MOSFETs. Si9122E provides
constant VGS voltage, independent of the line voltage to
minimize the gate charge loss as well as conduction loss.
To prevent shoot-through current or transformer shorting,
adjustable Break-Before-Make (BBM) time is incorporated
into the IC and is programmed by an external precision
resistor.
Si9122E is assembled in lead (Pb)-free TSSOP-20 and
MLP65-20 packages. To satisfy stringent ambient
temperature requirements, Si9122E is rated to handle the
industrial temperature range of - 40 °C to 85 °C. When a
situation arises which results in a rapid increase in primary
(or secondary) current such as output shorted or start-up
with a large output capacitor, control of the PWM generator
is handed over to the current loop. Monitoring of the load
current is by means of an external current sense resistor in
the source of the primary low-side switch. With the lower
OTP set at 135 °C , the DNF20 package improves the
thermal headroom.
V
IN
V
CC
R
OSC
High-Side
Primary
Driver
BST
DH
LX
9.1 V
V
UVLO
REG_COMP
Pre-Regulator
+
-
Int
V
REF
8.8 V
Low-Side
Primary
V
CC
V
INDET
Driver
V
FF
V
DL
UV
+
-
OSC
V
REF
EP
SS
Ramp
V
SD
+
-
PGND
132 k
550 mV
60 k
Error Amplifier
V
CC
–
+
Driver
Control
and
+
–
SR
H
V
PWM
Comparator
REF
Timing
2
20 µA
SYNC
Driver High
I
SS
OTP
8 V
Over Current Protection
V
CC
SR
L
CS2
CS1
Duty Cycle
Control
+
–
Peak DET
SYNC
Driver Low
Si9122E
GND
C
BBM
L_CONT
Figure 2.
ABSOLUTE MAXIMUM RATINGS All voltages referenced to GND = 0 V
Parameter
Limit
80
Unit
V
IN (Continuous)
VIN (100 ms)
VCC
100
14.5
95
Continuous
100 ms
VBST
113.2
100
15
VLX
V
V
BST - VLX
VREF, ROSC
- 0.3 to VCC + 0.3
- 0.3 to VCC + 0.3
- 0.3 to VCC + 0.3
5
Logic Inputs
Analog Inputs
mA
HV Pre-Regulator Input Current
Continuous
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2
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
Si9122E
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS All voltages referenced to GND = 0 V
Parameter
Limit
- 65 to 150
150
Unit
Storage Temperature
Operating Junction Temperature
°C
TSSOP-20b
850
2500
Power Dissipationa
MLP65-20c
mW
TSSOP-20
MLP65-20
75
38
Thermal Impedance (θJA
)
°C/W
Notes:
a. Device mounted on JEDEC compliant 1S2P test board.
b. Derate 14 mW/°C above 25 °C.
c. Derate 26 mW/°C above 25 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE All voltages referenced to GND = 0 V
Parameter
Limit
36 to 75
10.5 to 13.2
≥ 4.7
Unit
VIN
V
VCC
CVCC
µF
fOSC
200 to 500
30 to 72
22 to 50
0.1
kHz
ROSC
kΩ
µF
RBBM
CREF
CBOOST
0.1
0 to VCC - 2
0 to VCC
0.1 to 2.5
Analog Inputs
V
Digital Inputs
Reference Voltage Output Current
mA
a
SPECIFICATIONS
Test Conditions
Limits
Unless Otherwise Specified
- 40 to 85 °C
f
NOM = 500 kHz, VIN = 75 V
Min.b
Typ.c
Max.b
Unit
VINDET = 7.5 V; 10.5 V ≤ VCC ≤ 13.2 V
Parameter
Symbol
Reference (3.3 V)
Output Voltage
Short Circuit Current
VREF
ISREF
VCC = 12 V, 25 °C Load = 0 mA
VREF = 0 V
3.2
3.3
3.4
- 50
- 75
V
mA
mV
dB
I
REF = 0 to - 2.5 mA
at 100 Hz
Load Regulation
Power Supply Rejection
Oscillator
dVr/dir
PSRR
- 30
60
R
OSC = 30 kΩ, fNOM = 500 kHz
Accuracy (1 % ROSC
Max Frequencyg
Foldback Frequencyd
Error Amplifier
Input Bias Current
Gain
)
- 20
400
20
%
FMAX
ROSC = 22.6 kΩ
500
100
600
kHz
FFOBK
fNOM = 500 kHz, VCS2 - VCS1 > 150 mV
VEP = 0 V
IBIAS
AV
- 40
- 15
µA
V/V
MHz
dB
- 2.2
5
Bandwidth
BW
Power Supply Rejection
Slew State
PSRR
SR
at 110 Hz
60
0.5
V/µs
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
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3
Si9122E
Vishay Siliconix
a
SPECIFICATIONS
Test Conditions
Limits
Unless Otherwise Specified
- 40 to 85 °C
f
NOM = 500 kHz, VIN = 75 V
Min.b
Typ.c
Max.b
Unit
VINDET = 7.5 V; 10.5 V ≤ VCC ≤ 13.2 V
Parameter
Symbol
Current Sense Amplifier
VCS1 - GND, VCS2 - GND
Input Voltage CM Range
Current Sense Amplifier
Input Amplifier Gain
150
mV
VCM
AVOL
17.5
5
dB
MHz
mV
Input Amplifier Bandwidth
BW
VOS
Input Amplifier Offset Voltage
5
dVCS = 0
120
0
µA
CL_CONT Current
dVCS = 100 mV
dVCS = 100 mV
ICL_CONT
> 2
mA
IPD = IPU - ICL_CONT = 0
Lower Current Limit Threshold
100
VTLCL
VTHCL
mV
V
IPD > 2 mA
PU < 500 µA
IPU = 500 µA
Upper Current Limit Threshold
Hysteresis
150
- 50
I
CL_CONT
CL_CONT Clamp Level
0.6
1.5
PWM Operation
Primary
88
90
91
93
94
95
%
%
DMAX
DMIN
VEP = 0 V
fOSC = 500 kHz, 25 °C
Secondary
VINDET = 4.8 V, VIN = 48 V
Duty Cycle
VEP = 1.75 V
< 17
3
V
CS2 - VCS1 > 150 mV
Pre-Regulator
+ VIN
ILKG
IIN = 10 µA
Input Voltage
36
75
10
V
VIN = 75 V, VCC > VREG
VIN = 75 V, VINDET < VSD
VIN = 75 V, VINDET > VREF
Input Leakage Current
µA
mA
µA
mA
IREG1
IREG2
ISOURCE
ISINK
86
8
200
14
Regulator Bias Current
- 29
50
- 19
82
- 9
VCC = 12 V
VCC < VREG
Regulator_Comp
110
ISTART
Pre-Regulator drive Capability
20
7.4
8.5
9.1
9.1
9.2
8.8
8.8
10.4
9.7
VREG1
VREG2
VINDET > VREF
VINDET = 0 V
VCC Rising
VCC Pre-Regulator Turn Off
Threshold Voltage
TA = 25 °C
V
7.15
8.1
9.8
9.3
VUVLO
Undervoltage Lockout
VULVO Hysteresisf
TA = 25 °C
VUVLOHYS
0.5
Soft-Start
ISS
Soft-Start Current Output
Soft-Start Completion Voltage
Shutdown
Start-Up Condition
Normal Operation
12
20
28
µA
VSS_COMP
7.35
8.05
8.85
V
V
V
INDET Shutdown
SD Hysteresis
VSD
VINDET Rising
VINDET Falling
350
550
200
720
mV
V
VINDET Input Threshold Protection
INDET - VIN Under Voltage
V
VUV
VINDET Rising
VINDET Falling
3.13
0.23
3.3
0.3
3.46
0.35
VUV Hysteresis
Over Temperature Voltages
Activating Temperature
De-Activating Temperature
TJ Increasing
TJ Decreasing
OTP_on
OTP_off
135
113
°C
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Document Number: 73866
S-80112-Rev. D, 21-Jan-08
Si9122E
Vishay Siliconix
a
SPECIFICATIONS
Test Conditions
Limits
Unless Otherwise Specified
- 40 to 85 °C
f
NOM = 500 kHz, VIN = 75 V
Min.b
Typ.c
Max.b
Unit
VINDET = 7.5 V; 10.5 V ≤ VCC ≤ 13.2 V
Parameter
Symbol
Converter Supply Current (VCC
Shutdown
)
)
ICC1
Shutdown, VINDET = 0 V
50
350
µA
Converter Supply Current (VCC
Switching Disabled
ICC2
ICC3
VINDET < VREF
4
5
8
12
15
VINDET > VREF, fNOM = 500 kHZ
VCC = 12 V, CDH = CDL = 3 nF
CSRH = CSRL = 0.3 nF
Switching w/o Load
10
mA
Switching with CLOAD
ICC4
21
Output MOSFET DH Driver (High-Side)
VOH
V
- 0.3
Output High Voltage
Output Low Voltage
Boost Current
Sourcing 10 mA
Sinking 10 mA
BST
V
mA
A
VOL
IBST
ILX
VLX + 0.3
2.7
VLX = 48 V, VBST = VLX + VCC
VLX = 48 V, VBST = VLX + VCC
1.3
1.9
- 0.7
- 1.0
1.0
LX Current
- 1.3
- 0.4
ISOURCE
ISINK
tr
Peak Output Source
Peak Output Sink
Rise Time
- 0.75
VCC = 10.5 V
CDH = 3 nF
0.75
35
ns
tf
Fall Time
35
Output MOSFET DL Driver (Low-Side)
VOH
VCC - 0.3
0.75
Output High Voltage
Output Low Voltage
Peak Output Source
Peak Output Sink
Rise Time
Sourcing 10 mA
Sinking 10 mA
V
A
VOL
ISOURCE
ISINK
tr
0.3
- 1.0
1.0
35
- 0.75
VCC = 10.5 V
CDH = 3 nF
ns
tf
Fall Time
35
Synchronous Rectifier (SRH, SRL) Drivers
VOH
VOL
VCC - 0.4
Output High Voltage
Output Low Voltage
Sourcing 10 mA
Sinking 10 mA
V
0.4
tBBM1
tBBM2
tBBM3
tBBM4
ISOURCE
ISINK
tr
TA = 25 °C, RBBM = 33 kΩ, VINDET = 4.8 V,
VEP = 0 V, VIN = 48 V
48
9
Break-Before-Make Timee
ns
TA = 25 °C, RBBM = 33 kΩ, BST= 60 V,
VINDET = 4.8 V, VEP = 0 V, VIN = 48 V = LX
24
18
Peak Output Source
Peak Output Sink
Rise Time
- 100
100
35
VCC = 10.5 V
CDH = 3 nF
mA
ns
tf
Fall Time
35
Voltage Mode
td1DH
td2DL
Input to High-Side Switch Off
Input to Low-Side Switch Off
< 200
< 200
Error Amplifier
Current Mode
Current Amplifier
Notes:
ns
ns
td3DH
td4DL
Input to High-Side Switch Off
Input to Low-Side Switch Off
< 200
< 200
a. Refer to PROCESS OPTION FLOWCHART for additional information.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum (- 40 °C to 85 °C).
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. FMIN when VCL_CONT at clamp level. Typical foldback frequency change + 20 %, - 30 % over temperature.
e. See Figure 3 for Break-Before-Make time definition.
f. VUVLO tracks VREG1 by a diode drop.
g. Guaranteed by design and characterization, not tested in production.
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
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5
Si9122E
Vishay Siliconix
TIMING DIAGRAM FOR MOS DRIVERS
V
CC
PWM
PWM
PWM
PWM
GND
V
CC
DL
DL
GND
V
CC
SR
L
SR
L
GND
V
BST
DH
DH
V
MID
DH
DH
GND
V
CC
SR
H
SR
H
GND
Time
DH
t
t
t
t
BBM4
BST = LX+ V
V LX
BBM1
BBM2
BBM3
CC
50 %
LX
DH, LX
DH, LX
V
V
MID
SR
H
CC
50 %
DH, LX
GND
t
t
BBM4
BBM3
DL
SR
L
SR
L
V
CC
GND
t
t
BBM2
BBM1
Figure 3.
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Document Number: 73866
S-80112-Rev. D, 21-Jan-08
Si9122E
Vishay Siliconix
PIN CONFIGURATION
Si9122EDQ (TSSOP-20)
Si9122EDLP (MLP65-20)
V
BST
DH
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
IN
1
2
3
4
5
20
19
18
17
16
REG_COMP
V
BST
DH
IN
V
CC
LX
REG_COMP
V
DL
V
CC
LX
REF
GND
PGND
V
DL
REF
6
7
15
14
13
12
11
R
SR
H
GND
PGND
OSC
EP
SR
L
R
OSC
SR
H
8
V
SS
EP
SR
L
INDET
9
V
SS
CS1
CS2
BBM
INDET
10
CS1
CS2
BBM
C
L_CONT
C
L_CONT
Top View
Top View
ORDERING INFORMATION
Part Number
Temperature Range
Package
TSSOP-20
MLP65-20
Si9122EDQ-T1-E3
- 40 °C to 85 °C
Si9122EDLP-T1-E3
Eval Board
Temperature Range
Board Type
Contact Factory
- 10 °C to 70 °C
Surface Mount and Thru-Hole
PIN DESCRIPTION
VIN
1
2
3
4
5
6
7
Input supply voltage for the start-up circuit
Control signal for an external pass transistor
Supply voltage for internal circuitry
3.3 V reference
REG_COMP
VCC
VREF
GND
ROSC
Ground
External resistor connection to oscillator
Voltage control input
EP
VIN under voltage detect and shutdown function input. Shuts down or disables switching when VINDET
falls below preset threshold voltages and provides the feed forward voltage.
Current limit amplifier negative input
VINDET
8
9
CS1
CS2
10
11
12
13
14
Current limit amplifier positive input
CL_CONT
Current limit compensation
BBM
SS
Programmable Break-Before-Make time connection to an external resistor to set time delay
Soft-Start control - external capacitor connection
SRL
Signal transformer drive, sequenced with the primary side.
SRH
15
16
17
18
19
20
Signal transformer drive, sequenced with the primary side
Power ground
PGND
DL
Low-side gate drive signal - primary
LX
DH
High-side source and transformer connection node
High-side gate drive signal - primary
BST
Bootstrap voltage to drive the high-side n-channel MOSFET switch
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
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Si9122E
Vishay Siliconix
V
CC
V
IN
Pre-Regulator
12 V
+
–
Bandgap
Reference
3.3 V
V
9.1 V
REG
V
REF
9.1 V
+
–
V
UVLO
+
–
V
V
UV
High-Side
Primary
Driver
V
INDET
V
REF
8.8 V
C
L_CONT
SD
BST
DH
LX
+
–
Frequency
Foldback
Voltage
Feedforward
135 °C Temp
Protection
High Voltage
Interface
550 mV
V
SD
V
V
UV UVLO
R
OSC
OSC
OTP
Oscillator
Clock
V
CC
Clock
Logic
Low-Side
Primary
Driver
132 k
DL
60 k
EP
–
+
–
+
Logic
Timer
V
/2
REF
PGND
PWM
Generator
Current
Control
Gain
V
CC
CS2
CS1
Loop
Control
Synchronous
Driver
(High)
+
–
SR
H
100 mV
Blanking
V
CC
Synchronous
Driver
C
L_CONT
(Low)
V
CC
SR
L
Si9122E
20 µA
8 V
Soft-Start
SS
SS Enable
BBM
GND
Figure 4. Detailed Si9122E Block Diagram
DETAILED OPTION
Start-Up
When VINEXT rises above 0 V, the internal pre-regulator
begins to charge up the VCC capacitor. Current into the
external VCC capacitor is limited to typically 40 mA by the
internal DMOS device. When VCC exceeds the UVLO
voltage of 8.8 V a soft-start cycle of the switch mode supply
is initiated. The VCC supply continues to be charged by the
pre-regulator until VCC equals VREG. During this period,
between VUVLO and VREG, excessive load current will result
in VCC falling below VUVLO and stopping switch mode
operation. This situation is avoided by the hysteresis
between VREG and VUVLO and correct sizing of the VCC
capacitor, bootstrap capacitor and the soft-start capacitor.
The value of the VCC capacitor should therefore be chosen
to be capable of maintaining switch mode operation until the
required VCC current can be supplied from the external circuit
(e.g via a power transformer winding and zener regulator).
Feedback from the output of the switch mode supply charges
VCC above VREG and fully disconnects the pre-regulator,
isolating VCC from VIN. VCC is then maintained above VREG
for the duration of switch mode operation. In the event of an
over voltage condition on VCC, an internal voltage clamp
turns on at 14.5 V to shunt excessive current to GND.
Care needs to be taken if there is a delay prior to the external
circuit feeding back to the VCC supply. To prevent excessive
power dissipation within the IC it is advisable to use an
external PNP device. A pin has been incorporated on the IC,
(REG_COMP) to provide compensation when employing the
external device. In this case the VIN pin is connected to the
base of the PNP device and controls the current, while the
REG_COMP pin determines the frequency compensation of
the circuit. The value of the REG_COMP capacitor cannot be
too big, otherwise it will slow down the response of the
pre-regulator in the case that fault situations occur and
pre-regulator needs to be turned on again. To understand
the operation, please refer to figure 5.
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Document Number: 73866
S-80112-Rev. D, 21-Jan-08
Si9122E
Vishay Siliconix
The soft-start circuit is designed for the dc-dc converter to
start-up in an orderly manner and reduce component
stresses on the Converter. This feature is programmable by
selecting an external CSS. An internal 20 µA current source
charges CSS from 0 V to the final clamped voltage of 8 V. In
the event of UVLO or shutdown, VSS will be held low (< 1 V)
disabling driver switching. To prevent oscillations, a longer
soft-start time may be needed for highly capacitive loads
and/or high peak output current applications.
avoid this, a dedicated break-before-make circuit is included
which will generate non-overlapping waveforms for the
primary and the secondary drive signals. This is achieved by
a programmable timer which delays the on switching of the
primary driver relative to the off switching of the related
secondary and subsequently delays the on switching of the
secondary relative to the off switching of the related primary.
Typical variations of BBM times with respect to RBBM and
other operating parameters are shown on page 14 and 15.
Reference
Primary High- and Low-Side MOSFET Drivers
The reference voltage of Si9122E is set at 3.3 V. The
reference voltage should be de-coupled externally with
0.1 µF capacitor. The VREF voltage is 0 V in shutdown mode
and has 50 mA source capability.
The drive voltage for the low-side MOSFET switch is
provided directly from VCC. The high-side MOSFET however
requires the gate voltage to be enhanced above VIN. This is
achieved by bootstrapping the VCC voltage onto the LX
voltage (the high-side MOSFET source). In order to provide
the bootstrapping an external diode and capacitor are
required as shown on the application schematic. The
capacitor will charge up after the low-side driver has turned
on. The switch gatedrive signals DH and DL are shown in
figure 3.
Voltage Mode PWM Operation
Under normal load conditions, the IC operates in voltage
mode and generates a fixed frequency pulse width
modulated signal to the drivers. Duty cycle is controlled over
a wide range to maintain output voltage under line and load
variation. Voltage feedforward is also included to take
account of variations in supply voltage VIN.
Secondary MOSFET Drivers
In the half-bridge topology requiring isolation between output
and input, the reference voltage and error amplifier must be
supplied externally, usually on the secondary side. The error
information is thus passed to the power controller through an
opto-coupling device. This information is inverted, hence 0 V
represents the maximum duty cycle, while 2 V represents
minimum duty cycle. The error information enters the IC via
pin EP, and is passed to the PWM generator via an inverting
amplifier. The relationship between Duty cycle and VEP is
shown in the Typical Characteristic Graph, Duty Cycle vs.
VEP 25 °C , page 12. Voltage feedforward is implemented by
taking the attenuated VIN signal at VINDET and directly
modulating the duty cycle.
The secondary side MOSFETs are driven from the Si9122E
via a center tapped pulse transformer and inverter drivers.
The waveforms from SRH and SRL are shown in figure 3. Of
importance is the relative voltage between SRH and SRL, i.e.
that which is presented across the primary of the pulse
transformer. When both potentials of SRL and SRH are equal
then by the action of the inverting drivers both secondary
MOSFETs are turned on.
Oscillator
The oscillator is designed to operate at a nominal frequency
of 500 kHz. The 500 kHz operating frequency allows the
converter to minimize the inductor and capacitor size,
improving the power density of the converter. The oscillator
and therefore the switching frequency is programmable by
attaching a resistor to the ROSC pin. Under overload
conditions the oscillator frequency is reduced by the current
overload protection to enable a constant current to be
maintained into a low impedance circuit.
At start-up, i.e., once VCC is greater than VUVLO, switching is
initiated under soft-start control which increases primary
switch on-times linearly from DMIN to DMAX over the soft-start
period. Start-up from a VINDET power down is also initiated
under soft-start control.
Half Bridge and Synchronous Rectification Timing
Sequence
Current Limit
The PWM signal generated within the Si9122E controls the
low and high-side bridge drivers on alternative cycles. A
period of inactivity always results after initiation of the soft-
start cycle until the soft-start voltage reaches approximately
1.2 V and PWM controlled switching begins. The first bridge
driver to switch is always the low-side (DL), as this allows
charging of the high-side boost capacitor.
The timing and coordination of the drives to the primary and
secondary stages is very important and shown in figure 3. It
is essential to avoid the situation where both of the
secondary MOSFETs are on when either the high or the low-
side switch are active. In this situation the transformer would
effectively be presented with a short across the output. To
Current mode control providing constant current operation is
achieved by monitoring the differential voltage VCS between
the CS1 and CS2 pins, which are connected to a current
sense resistor on the primary low-side MOSFET. In the
absence of an overcurrent condition, VCS is less than lower
current limit threshold VTLCL (typical 100 mV); CL_CONT is
pulled up linearly via the 120 µA current source (IPU) and
both DL and DH switch at half the oscillator set frequency.
When a moderate overcurrent condition occurs (VTLCL < VCS
< VTHCL), the CL_CONT capacitor will be discharged at a rate
that is proportional to VCS - 100 mV by the IPD current
source. Both driver outputs are in frequency fold-back mode
and the switching frequency becomes roughly 20 % of
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
www.vishay.com
9
Si9122E
Vishay Siliconix
normal switching frequency. When a severe overcurrent
condition occurs (VTHCL < VCS), the NMOS discharges
CL_CONT capacitor immediately at 2 mA rate and the
CL_CONT voltage will be clamped to 1.2 V disabling both DL
and DH outputs.
Before VCS reaches severe overcurrent condition, a lowering
of the CL_CONT voltage results in PWM control of the output
drive being taken over by the current limit control loop
through CL_CONT. Current control initially reduces the
switching duty cycle toward the minimum the chip can reach
(DMIN). If this duty cycle reduction still cannot lower the load
current, then the switching frequency will start to fold back to
minimum 1/5 of the nominal frequency. This prevents the
on-time of the primary drivers from being reduced to below
100 ns and avoids current tails. If VCS > VTHCL, the switching
will then stop.
However, if the divided voltage applied to the VINDET pin is
greater than VCC - 0.3 V, the high-side driver, DH, will stop
switching until the voltage drops below VCC - 0.3 V. Thus, the
resistive tap on the VIN divider must be set to accommodate
the normal VCC operating voltage to avoid this condition.
Alternatively, a zener clamp diode from VINDET to GND may
also be used.
Shutdown Mode
If VINDET is forced below the lower VSD threshold, the device
will enter SHUTDOWN mode. This powers down all
unnecessary functions of the controller, ensures that the
primary switches are off, and results in a low level current
demand from the VIN or VCC supplies.
V
INEXT
With constant current mode control and frequency foldback,
protection of the MOSFET switches is increased. The
converter reverts to voltage mode operation immediately
when the primary current falls below the limit level, and
CL_CONT capacitor is charged up and clamped to 6.5 V. The
soft-start function does not apply during current limit period,
as this would constitute hiccup mode operation.
R
EXT
V
IN
12 V
PNP Ext
Auxillary
CC
HV
DMOS
V
V
Voltage Monitor - V
INDET
IN
V
CC
The chip provides a means of sensing the voltage of VIN, and
withholding operation of the output drivers until a minimum
voltage of VREF (3.3 V, 300 mV hysteresis), is achieved. This
is achieved by choosing an appropriate resistive tap between
the ground and VIN, and comparing this voltage with the
reference voltage. When the applied voltage is greater than
VREF, the output drivers are activated as normal. VINDET also
provides the input to the voltage feedforward function.
REG_COMP
C
VCC
0.5 µF
C
EXT
2 nF
14.5 V
V
REF
GND
Figure 5. High-Voltage Pre-Regulator Circuit
V
CC
OSC
AV
I
PU
120 µA (nom)
+
-
GM
Peak Detect
V
C
L_CLAMP
OFFSET
C
R
L_CONT
CS1
CS2
-
AV
A
150 mV
100 mV
V
+
EXT
Blank
+
-
C
EXT
GM
I
PD
0 to 240 µA (nom)
A
V
Figure 6. Current Limit Circuit
www.vishay.com
10
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
Si9122E
Vishay Siliconix
REDUCTION OF BBM
AT HIGHER f
OSC
2, 4
The start of a switching period is defined as the turning point
of the oscillator, marked in Figure 7 as A, with the end of a
switching period marked as B. For a half bridge, two
switching periods are required for both the primary high-side
and low-side drivers to operate as shown in Figure 3. For a
given oscillator frequency there is a finite time in which all
events from equation (1) have to occur. These are tdt dead-
time duration which is a function of VEP, tpd1 is the
propagation delay from the PWM to SRL (or SRH ) output
going low, tBBM1 (or tBBM3) rise delay, DL (or DH) primary
driver on-time, tpd2 is the propagation delay from PWM to DL
(or DH) output going low and tBBM2(or tBBM4) fall delay.
To mitigate the decrease in set tBBM2 and tBBM4, the
following criteria must be met. The set tBBM2 plus its
associated tpd2 must not exceed 3.4 % of the oscillator
period. The typical tBBM2 and tBBM4 delays are provided in
figure 9 to facilitate setting these delays for a given frequency
with RBBM of 33 kΩ.
t
t
BBM2 + tpd2 < 3.4 % of oscillator period
BBM4 + tpd4 < 3.4 % of oscillator period
(2)
(3)
It is critical to avoid the condition where the sum of tBBM2(set)
and tpd2 is greater than 6.8 % of oscillator period whereby the
correct sequence of logic signals cannot be guaranteed.
Figure 7 shows the switching cycle for the low side primary
driver and associated synchronous driver and equation (1)
shows the switching time components.
B
A
At 500 kHz and maximum duty tpd2 is typically 60 ns.
Tswitch = 1/2tdt + tpd1+ tSRLOFF + 1/2tdt - tpd2- tBBM2 (1)
B
A
1.2 V
MAX
SRL
VEP
T
pd1
Actual
BBM2
½ deadtime
½ deadtime
T
pd2
1.2 V
BBM1
DL
Set BBM2
Transition
point
SRL
T
pd1
Figure 8. Components of a Low-Side Switching Period with
Maximum Duty and Limited BBM2
T
pd2
60
BBM1
DL
BBM4
50
BBM2
40
30
Transition
point
Figure 7. Components of a Low-Side Switching Period
The Si9122E has an improved primary and secondary duty
cycles with typical maximum secondary duty at 93.2 %.
Hence the dead-time is 6.8 % or 136 ns at 500 kHz. Half of
the dead-time is 68 ns and during this time tpd2 plus tBBM2
has to occur before the next transition point of the oscillator
cycle. RBBM contributes 1.2 ns/kΩ to tBBM2; with 33 kΩ this
amounts to 40 ns. If tBBM2 is set beyond the transition point,
SRL will be forced high due to logic conditions and a
reduction in the set tBBM2 will be determined by the half dead-
time minus tpd2 and will be independent of the RBBM value as
shown in figure 8.
BBM2
20
10
0
150
200
250
300
350
400
450
500
F
osc
(kHz)
Figure 9. Reduction in BBM2 and BBM4
Si9122E BBM vs. FOSC, VIN = 50 V, VCC = 10 V,
BST = 60 V, LX = 50 V, VEP = 0 V
Note: this applies to tBBM4 as well.
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
www.vishay.com
11
Si9122E
Vishay Siliconix
TYPICAL CHARACTERISTICS
600
3.300
3.295
3.290
3.285
3.280
3.275
3.270
500
400
300
200
20
30
40
50
60
70
80
- 50
- 25
0
25
Temperature (°C)
VREF vs. Temperature, VCC = 12 V
50
75
100
R
(k )
OSC
F
vs. R
at V = 12 V
CC
OSC
OSC
10.0
9.5
9.0
8.5
8.0
7.5
100
90
80
70
60
50
40
30
20
10
0
3.6 V = V
INDET
4.8 V
7.2 V
V
INDET
V
REF
TC = - 11 mV/C
V
CC
= 12 V
- 50 - 25
0
25
50
75
100 125 150
0.0
0.5
1.0
1.5
2.0
V
(V)
EP
Temperature (°C)
VREG vs. Temperature, VIN = 48 V
SRL, SRH Duty Cycle vs. VEP
8.20
8.15
8.10
8.05
8.00
7.95
7.90
25
V
CC
= 13 V
23
21
19
17
15
TC = + 1.25 mV/C
V
CC
= 12 V
V
INDET
V
REF
V
CC
= 10 V
- 50 - 25
0
25
50
75
100 125 150
- 50
- 25
0
25
50
75
100
125
Temperature (°C)
VSS vs. Temperature, V = 12 V
Temperature (°C)
ISS vs. Temperature
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12
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
Si9122E
Vishay Siliconix
TYPICAL CHARACTERISTICS
11
13
12
11
10
9
10
9
8
7
6
8
5
7
- 50
- 25
0
25
Temperature (°C)
IREG2 vs. Temperature, VCC = 12 V
50
75
100
- 50
- 25
0
25
Temperature (°C)
ICC3 vs. Temperature VCC = 12 V
50
75
100
250
200
150
100
50
250
V
CC
= 12 V
V
CC
= 12 V
200
150
100
50
0
0
0
200
400
(mV)
600
800
0
200
400
(mV)
600
800
V
V
OL
OH
DH, DL ISINK vs. VOL
DH, DL ISOURCE vs. VOH
35
30
25
20
15
10
5
35
30
25
20
15
10
5
V
CC
= 12 V
V
CC
= 12 V
0
0
0
200
400
(mV)
600
800
0
200
400
(mV)
600
800
V
V
OL
OH
SRL, SRH ISINK vs. VOL
SRL, SRH ISOURCE vs. VOH
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
www.vishay.com
13
Si9122E
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
65
55
45
35
25
15
t
t
BBM4
V
CC
= 12 V
V
CC
= 12 V
t
t
BBM1
90
80
70
60
50
40
30
20
BBM1
BBM4
t
t
BBM2
BBM3
t
t
BBM3
BBM2
25
30
35
(k
40
45
25
30
35
40
45
R
)
R
(k )
BBM
BBM
tBBM vs. RBBM, VEP = 0 V, VLX = 48 V, BST = 60 V,
INDET = 4.8 V, fOSC < 200 kHZ
tBBM vs. RBBM, VEP = 1.65 V, VLX = 48 V, BST = 60 V,
INDET = 4.8 V
V
V
80
70
60
50
40
30
60
55
50
45
40
35
30
t
V
= 13 V
BBM1, CC
V
= 1.65 V
BBM
t
V
= 10 V
EP
R
BBM1, CC
t
V
= 12 V
= 33 k
BBM1, CC
t
V
= 10 V
BBM1, CC
V
R
= 0 V
= 33 k
EP
BBM
t
V
= 13 V
= 12 V
BBM1, CC
t
V
= 12 V
BBM1, CC
t
V
= 10 V
BBM2, CC
t
V
= 10 V
= 13 V
BBM2, CC
t
V
= 12 V
BBM2, CC
t
V
BBM2, CC
t
V
= 13 V
BBM2, CC
t
V
BBM2, CC
- 50
- 25
0
25
50
75
100
125
- 50
- 25
0
25
50
75
100
125
Temperature (°C)
tBBM1, 2 vs. Temperature, VEP = 0 V, fOSC < 200 kHz
Temperature (°C)
tBBM1, 2 vs. Temperature, VEP = 1.65 V
70
65
60
55
50
45
40
35
30
80
t
f
V
= 10 V
BBM4, CC
osc
V
= 0 V
BBM
V
= 1.65 V
BBM
EP
R
EP
R
< 200 kHz
t
V
= 13 V
BBM4, CC
= 33 k
= 33 k
70
60
50
40
30
20
t
V
= 12 V
t
V
= 12 V
BBM4, CC
BBM4, CC
t
t
V
= 10 V
= 12 V
BBM4, CC
t
V
= 13 V
BBM4, CC
t
V
= 13 V
BBM3, CC
V
BBM3, CC
t
V
= 12 V
BBM3, CC
t
V
= 10 V
BBM3, CC
t
V
= 13 V
BBM3, CC
t
V
= 10 V
BBM3, CC
- 50
- 25
0
25
50
75
100
125
- 50
- 25
0
25
50
75
100
125
Temperature (°C)
tBBM3, 4 vs. Temperature, VEP = 0 V, fosc < 200 kHz
Temperature (°C)
tBBM3, 4 vs. Temperature, VEP = 1.65 V
www.vishay.com
14
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
Si9122E
Vishay Siliconix
TYPICAL CHARACTERISTICS
80
55
50
45
40
35
t
V
= 13 V
= 10 V
BBM1, CC
t
t
V
= 13 V
BBM1, CC
70
60
50
40
30
t
V
= 12 V
t
V
BBM1, CC
BBM1, CC
V
= 12 V
= 10 V
BBM1, CC
t
V
BBM1, CC
V
EP
= 0 V
V
EP
= 1.65 V
t
V
= 12 V
BBM2, CC
t
V
= 10 V
BBM2, CC
t
V
= 13 V
BBM2, CC
t
V
= 13 V
BBM2, CC
t
V
= 12 V
BBM2, CC
t
V
= 10 V
BBM2, CC
3.5
4.5
5.5
6.5
7.5
3.5
4.5
5.5
6.5
7.5
V
INDET
(V)
V
INDET
(V)
tBBM1, 2 vs. VCC vs. VINDET, fOSC < 200 kHz
tBBM1, 2 vs. VCC vs. VINDET
80
65
60
55
50
45
40
35
30
t
V
= 10 V
BBM4, CC
LX = 48 V, BST = 60 V
LX = 48 V, BST = 60 V
V
= 0 V
EP
t
V
= 12 V
BBM4, CC
70
60
50
40
30
t
V
= 12 V
= 13 V
BBM4, CC
t
V
= 10 V
BBM4, CC
t
V
BBM4, CC
t
V
= 13 V
BBM4, CC
V
= 1.65 V
EP
t
V
= 12 V
BBM3, CC
t
V
= 10 V
BBM3, CC
t
V
= 12 V
BBM3, CC
t
V
= 13 V
t
V
= 10 V
BBM3, CC
BBM3, CC
t
V
= 13 V
BBM3, CC
3.5
4.5
5.5
6.5
7.5
3.5
4.5
5.5
6.5
7.5
V
INDET
(V)
V
INDET
(V)
tBBM3, 4 vs. VCC vs. VINDET, fOSC < 200 kHz
tBBM3, 4 vs. VCC vs. VINDET
500
400
300
200
100
0
60
50
40
30
20
10
0
500
50
45
40
35
30
25
20
15
10
5
Frequency
D%
Frequency
D%
400
300
200
D
DL
D
SR
L
I
OUT
100
0
V
R
OSC
3
V
OUT
0
0.0
0.2
0.4
0.6
)
0.8
1.0
1
2
4
5
R
LOAD
(
V
C
(V)
L_CONT
IOUT vs. RLOAD (VIN = 72 V)
VROSC, FOSC, and Duty Cycle vs. VCL_CONT
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
www.vishay.com
15
Si9122E
Vishay Siliconix
TYPICAL WAVEFORMS
SR 10 V/div
L
SR 10 V/div
L
I 5 A /div
OUT
I
5 A /div
OUT
10 V/div
DL
DL5 V/div
CS2 5 V/div
CS2 50 mV/div
2 µs/div
2 µs/div
Figure 10. Foldback Mode, RL = 0.02 Ω
Figure 11. Normal Mode, RL = 0.1 Ω
V
2 V/div
2 V/div
CL
V
IN
2 V/div
V
EP
I
10 A/div
OUT
V
OUT
2 V/div
V
CC
2 V/div
2 ms/div
200 µs/div
Figure 13. Overload Recovery
Figure 12. VCC Ramp-Up
DH 5 V/div
LX 20 V/div
SR 5 V/div
L
DL5 V/div
SR 2 V/div
H
SR 5 V/div
H
SR 2 V/div
L
500 ns/div
500 ns/div
Figure 14. Effective BBM - Measured On Secondary
Figure 15. Drive Waveforms
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73866.
www.vishay.com
16
Document Number: 73866
S-80112-Rev. D, 21-Jan-08
Package Information
Vishay Siliconix
TSSOP: 20-LEAD (POWER IC ONLY)
B
D
4X
N
0.20
C
H
A−B
A−B
D
D
0.20
2X N/2 TIPS
E
1
E
M
bbb
C
A−B
D
b
9
ꢀ
0.05
C
A
2
E/2
A
C
1
2 3
aaa
C
H
A
1
e
1.00 DIA.
SEATING
PLANE
1.00
A
D
(14_)
SIDE VIEW
MILLIMETERS
Dim
Min
—
Nom
—
Max
1.10
0.15
0.95
0.25
A
A1
A2
aaa
b
b1
bbb
c
c1
D
E
E1
e
L
PARTING
LINE
0.05
0.85
—
+
+
0.90
0.076
−
H
0.19
0.19
0.30
0.25
6
L
(∝)
0.22
0.10
−
c
1.00
B
B
0.09
0.09
0.20
0.16
(14_)
0.127
6.50 BSC
6.40 BSC
4.40
0.65 BSC
0.60
20
DETAIL ‘A’
(SCALE: 30/1)
(VIEW ROTATED 90_ C.W.)
4.30
0.50
4.50
0.70
C
L
N
4.2
P
3.0
P1
∝
0_
—
8_
e/2
ECN: S-40082—Rev. A, 02-Feb-04
DWG: 5923
SEE
DETAIL ‘A’
X
X = A and B
END VIEW
LEAD SIDES
TOP VIEW
Document Number: 72818
28-Jan-04
www.vishay.com
1
Package Information
Vishay Siliconix
PowerPAKr MLP65-18/20 (POWER IC ONLY)
D
D/2
NXb
Index Area
D/2 E/2
M
bbb
A
B
C
-A-
NXb
E/2
E2/2
E2
E
2.00
NXL
2x
Index Area
D/2 E/2
Detail D
D2/2
aaa
C
D2
TOP VIEW
BOTTOM VIEW
A
A3
// ccc
0.08
C
C
SEATING
PLANE
-C-
NX
SIDE VIEW
A1
# IDENTIFIER TYPE A
Chamber
e/2
e
Terminal Tip
5
Terminal Tip
5
e
EVEN TERMINAL SIDE
ODD TERMINAL SIDE
DETAIL B
Document Number: 73182
15-Oct-04
www.vishay.com
1
Package Information
Vishay Siliconix
PowerPAK MLP65-18/20 (POWER IC ONLY)
N = 18/20 PITCH: 0.5 mm, BODY SIZE: 6.00 x 5.00
MILLIMETERS*
INCHES
Dim
A
A1
Min
Nom
0.90
0.02
Max
Min
Nom
Max
Notes
1, 2
1, 2
0.80
0.00
0.00
1.00
0.05
1.00
0.031
0.000
0.000
0.035
0.001
0.003
0.008 REF
0.006
0.010
0.004
0.009
0.004
0.236 BSC
1.63
0.039
0.002
0.004
A2
0.65
1, 2
A3
0.20 REF
0.15
aaa
b
−
0.18
−
−
0.30
−
−
−
0.25
0.007
0.012
8
bbb
C’
0.10
−
−
−
−
−
−
−
0.225
0.10
−
4, 10
ccc
D
−
−
6.00 BSC
4.15
1, 2
1, 2
1, 2
1, 2
D2
4.00
4.25
0.157
0.167
E
5.00 BSC
3.15
0.197 BSC
0.124
0.020
0.022
18, 20
9
E2
3.00
−
3.25
−
0.118
−
0.128
−
e
0.50
L
0.45
0.55
0.65
0.018
0.026
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
N
18, 20
9
ND(18)
NE(18)
ND(20)
NE(20)
0
0
10
10
0
0
* Use millimeters as the primary measurement.
ECN: S-41946—Rev. A, 18-Oct-04
DWG: 5939
NOTES:
1.
2.
3.
4.
Dimensioning and tolerancing conform to ASME Y14.5M-1994.
All dimensions are in millimeters. All angels are in degrees.
N is the total number of terminals.
The terminal #1 identifier and terminal numbering convention shall conform to JEDEC publication 95 SSP-022. Details of terminal #1 identifier are optional,
but must be located within the zone indicated. A dot can be marked on the top side by pin 1 to indicate orientation.
5.
6.
7.
8.
ND and NE refer to the number of terminals on the D and E side respectively.
Depopulation is possible in a symmetrical fashion.
NJR refers to NON JEDEC REGISTERED.
Dimension “b” applies to metalized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the terminal has optional radius on
the other end of the terminal, the dimension “b” should not be measured in that radius area.
9.
Coplanarity applies to the exposed heat slug as well as the terminal.
10. The 45_ chamfer dimension C’ is located by pin 1 on the bottom side of the package.
Document Number: 73182
15-Oct-04
www.vishay.com
2
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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