AP6800GEO [A-POWER]
Low on-resistance, Optimal DC/DC battery application; 低导通电阻，最优的DC / DC电池应用
| 型号： | AP6800GEO |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | Low on-resistance, Optimal DC/DC battery application |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP6800GEO
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G2
▼ Low on-resistance
BVDSS
RDS(ON)
ID
20V
20mΩ
6
S2
S2
D2
▼ Capable of 2.5V gate drive
▼ Optimal DC/DC battery application
▼ RoHS compliant
G1
S1
S1
TSSOP-8
D1
Description
D1
S1
D2
S2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
G2
Absolute Maximum Ratings
Symbol
Parameter
Drain-Source Voltage
Rating
20
Units
V
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Gate-Source Voltage
±10
6.0
4.7
V
A
A
A
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
30
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
1
W
W/℃
℃
0.008
-55 to 150
-55 to 150
TSTG
TJ
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
125
Unit
℃/W
Thermal Resistance Junction-ambient3
Max.
Data and specifications subject to change without notice
200109061-1/4
AP6800GEO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
20
-
-
0.02
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
VGS=4V, ID=4A
V/℃
mΩ
RDS(ON)
-
20
-
-
-
-
-
21
mΩ
mΩ
V
VGS=2.5V, ID=2A
25
1.2
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±10V
ID=6A
VDS=15V
VGS=4.5V
VDS=10V
0.5
-
gfs
IDSS
Forward Transconductance
6
-
S
Drain-Source Leakage Current (T=25oC)
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
-
-
-
-
-
-
-
-
-
-
1
25
±30
37
-
-
-
-
j
Drain-Source Leakage Current (T=70oC)
j
IGSS
Qg
Qgs
Qgd
td(on)
tr
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
23.4
2.5
11.1
8.2
18.4
19.6
58
580
315
165
2
ID=1A
td(off)
tf
Ciss
Coss
Crss
Rg
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
RG=3.3Ω,VGS=5V
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
-
-
-
-
-
-
-
-
930
-
-
f=1.0MHz
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
IS=0.84A, VGS=0V
IS=6A, VGS=0V,
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
-
-
-
-
40
39
1.2
-
-
V
ns
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
2/4
AP6800GEO
40
30
20
10
0
40
30
20
10
0
T A =25 o C
T A =150 o C
4.5V
4.5V
3.5V
3.0V
2.5V
3.5V
3.0V
2.5V
V G =2.0V
V
G =2.0V
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.9
1.5
1.1
0.7
0.3
70
40
10
I D = 4A
I D = 6A
T
A =25 o C
V
G = 4.5V
Ω
Ω
Ω
Ω
-50
0
50
100
150
0
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
5
4
3
2
1
0
1.6
1.2
0.8
0.4
0
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP6800GEO
f=1.0MHz
12
10000
1000
100
I D = 6 A
10
V
V
V
DS =10V
DS =12V
DS =15V
8
6
4
2
0
C iss
C oss
C rss
0
5
10
15
20
25
30
35
40
45
50
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor = 0.5
0.2
100us
1ms
10
0.1
0.1
0.05
1
10ms
100ms
0.02
0.01
PDM
t
0.01
T
Single Pulse
0.1
T A =25 o C
1s
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208oC/W
Single Pulse
DC
0.001
0.0001
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
70
60
50
40
30
20
10
0
VG
V
DS = 5V
QG
T j =25 o C
T j =150 o C
5V
QGD
QGS
Q
Charge
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
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