AP73T03GJ-HF_14 [A-POWER]

Simple Drive Requirement;


型号：	AP73T03GJ-HF_14
厂家：	ADVANCED POWER ELECTRONICS CORP.
描述：	Simple Drive Requirement
文件：	总4页 (文件大小：103K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AP73T03GH/J-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

BV_DSS

R_DS(ON)

I_D

30V

9mΩ

55A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

□

TO-252(H)

The TO-252 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters. The through-hole version (AP73T03GJ)

is available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

160

P_D@T_C=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 175

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

Rthj-a

62.5

110

Rthj-a

Maximum Thermal Resistance, Junction-ambient

Data & specifications subject to change without notice

201003162

AP73T03GH/J-HF

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

BV_DSS

Parameter

Test Conditions

V_GS=0V, I_D=250uA

V_GS=10V, I_D=30A

_GS=4.5V, I_D=20A

Min. Typ. Max. Units

Drain-Source Breakdown Voltage

mΩ

Static Drain-Source On-Resistance²

R_DS(ON)

V_GS(th)

Gate Threshold Voltage

Forward Transconductance

Drain-Source Leakage Current

Gate-Source Leakage

Total Gate Charge²

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time²

Rise Time

V_DS=V_GS, I_D=250uA

V_DS=10V, I_D=30A

V_DS=30V, V_GS=0V

V_GS=+20V, V_DS=0V

I_D=30A

g_fs

I_DSS

I_GSS

+100

Q_g

2.5

9.5

Q_gs

Q_gd

t_d(on)

t_r

V_DS=24V

V_GS=4.5V

V_DS=15V

I_D=30A

20.5

t_d(off)

t_f

Turn-off Delay Time

Fall Time

R_G=3.3Ω,V_GS=10V

R_D=0.5Ω

C_iss

C_oss

C_rss

R_g

Input Capacitance

V_GS=0V

700 1120

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_DS=25V

215

155

1.9

f=1.0MHz

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

V_SD

t_rr

Forward On Voltage²

Reverse Recovery Time²

I_S=30A, V_GS=0V

I_S=10A, V_GS=0V,

dI/dt=100A/µs

1.2

Q_rr

Reverse Recovery Charge

Notes:

1.Pulse width limited by max. junction temperature

2.Pulse test

3.Surface mounted on 1 in²copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP73T03GH/J-HF

160

120

100

T _C=175 ^oC

10V

7.0V

6.0V

T _C=25 ^oC

7.0V

6.0V

5.0V

V _G=4.0V

V _G= 4.0V

0.0

2.0

4.0

6.0

8.0

V _DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.0

1.6

1.2

0.8

0.4

I _D=20A

I _D=30A

_C=25 ^oC

_G=10V

+20

-50

100

150

200

T _j, Junction Temperature ( ^oC)

V _GS, Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

1.6

1.2

0.8

0.4

0.0

T _j=175 ^oC

T _j=25 ^oC

0.2

0.4

0.6

0.8

1.2

1.4

-50

100

150

200

T _j, Junction Temperature ( ^oC)

V _SD, Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

AP73T03GH/J-HF

f=1.0MHz

1000

800

600

400

200

I _D=30A

_DS=15V

_DS=18V

C _iss

_DS=24V

C _oss

C _rss

Q _G, Total Gate Charge (nC)

V _DS,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

Duty factor = 0.5

0.2

100

Operation in this area

limited by R

DS(ON)

0.1

100us

+20

0.1

0.05

P_DM

1ms

0.02

0.01

Duty Factor = t/T

T _C=25 ^oC

10ms

100ms

Peak T_j= P_DMx R_thjc+ T_C

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

0.1

100

V _DS,Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

V_DS

V_G

90%

Q_G

4.5V

Q_GD

Q_GS

10%

V_GS

t_r

t_d(on)

t_d(off)t_f

Charge

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

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