AP75N07GP [A-POWER]
TRANSISTOR 80 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power;![AP75N07GP](http://pdffile.icpdf.com/pdf2/p00264/img/icpdf/AP75N07GS_1590911_icpdf.jpg)
型号: | AP75N07GP |
厂家: | ![]() |
描述: | TRANSISTOR 80 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power 局域网 开关 脉冲 晶体管 |
文件: | 总6页 (文件大小:192K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AP75N07GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
75V
11mΩ
80A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220(P)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP75N07GP)
are available for low-profile applications.
G
D
TO-263(S)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
75
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current, VGS @ 10V4
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
80
A
70
A
320
A
PD@TC=25℃
Total Power Dissipation
300
W
Linear Derating Factor
2
W/℃
mJ
℃
EAS
TSTG
TJ
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
450
-55 to 175
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
Maximum Thermal Resistance, Junction-ambient
0.5
40
62
Rthj-a
Rthj-a
Data & specifications subject to change without notice
1
200902235
AP75N07GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=1mA
Min.
Typ.
Max.
Units
V
Drain-Source Breakdown Voltage
75
-
-
0.08
-
-
-
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
Static Drain-Source On-Resistance2 VGS=10V, ID=40A
-
11
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=15V, ID=40A
VDS=75V, VGS=0V
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
120
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T=125oC) VDS=60V, VGS=0V
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1
-
250
j
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+20V, VDS=0V
ID=40A
-
+100
Qg
83
130
Qgs
Qgd
td(on)
tr
VDS=60V
10
-
VGS=4.5V
VDD=40V
51
-
15
-
ID=30A
73
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=10Ω,VGS=10V
RD=1.33Ω
VGS=0V
340
200
4270
690
320
1.8
-
-
6830
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
f=1.0MHz
f=1.0MHz
-
2.7
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
Min.
Typ.
-
Max.
Units
V
VSD
trr
Tj=25℃, IS=40A, VGS=0V
IS=40A, VGS=0V
-
-
-
1.5
ns
Reverse Recovery Time
Reverse Recovery Charge
90
-
-
nC
Qrr
dI/dt=100A/µs
235
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=30A.
4.Package limitation current is 80A .
5.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP75N07GS/P
200
160
120
80
280
240
200
160
120
80
T C = 25 o
C
T C = 175 o
C
10V
7.0 V
5.0V
4.5V
10V
7.0 V
5.0V
4.5V
V
G =3.0V
V G =3.0V
40
40
0
0
0
3
6
9
12
15
0
3
6
9
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
20
16
12
8
I D =20A
I D =40A
T
C =25 o C
V
G =10V
Ω
2
4
6
8
10
25
50
75
100
125
150
175
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
15
10
5
13
12
11
10
9
V GS =4.5V
V GS =10V
T j =175 o C
T j =25 o C
0
0
20
40
60
80
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I D , Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3
AP75N07GS/P
f=1.0MHz
14
12
10
10000
1000
100
C iss
I D = 4 0 A
DS = 48 V
V DS = 4 0 V
V
8
6
4
2
0
V
DS = 60 V
C oss
C rss
0
40
80
120
160
200
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
DUTY=0.5
100
10
1
100us
0.2
0.1
0.1
1ms
0.05
PDM
t
10ms
100ms
0.02
T
0.01
T C =25 o
C
Duty factor = t/T
DC
Peak Tj = PDM x Rthjc + TC
SINGLE PULSE
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
80
40
0
T j =175 o C
VG
T j =25 o C
V
DS =5V
QG
4.5V
QGD
QGS
Q
Charge
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
SYMBOLS
Millimeters
E1
MIN
4.00
0.00
0.50
1.07
0.30
1.10
8.30
NOM
4.75
MAX
D2
A
A1
b
5.20
0.30
1.10
1.47
0.80
1.70
9.80
0.15
0.90
D1
b1
c
1.27
D
0.55
c1
D
1.40
9.05
D1
D2
E
5.10(ref)
1.27(ref)
10.10
b1
b
L2
9.50
10.70
L3
7.00~9.00(ref)
E1
e
2.04
2.54
2.54(ref)
1.5 (ref)
4.50
3.04
L1
L2
L3
θ
e
3.50
0°
5.50
8°
-----
A
c
θ
c1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
A1
L1
Part Marking Information & Packing : TO-263
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
75N07GS
YWWSSS
LOG
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
Draw No. M1-S3-G-v04
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220 (T-TYPE)
E
A
E1
Millimeters
SYMBOLS
MIN
NOM
4.50
0.80
1.38
0.48
1.30
MAX
φ
L1
A
b
4.20
0.60
1.10
0.30
1.10
4.80
1.00
1.80
0.65
1.50
L5
c1
b1
c
L4
c1
E
9.70 10.00 10.40
D
E1
e
7.40
8.30
9.20
2.54 (ref.)
L
12.70 13.60 14.50
L1
L2
L3
L4
L5
φ
D
2.50
-
2.75
-
3.00
-
b1
G
L3
2.60
3.35
4.10
14.30 15.15 16.00
6.00
3.40
8.30
-
6.40
3.70
8.85
-
6.80
4.00
9.40
-
L
F
G
1.89
2.49
3.09
c
b
e
Part Marking Information & Packing : TO-220 (T-TYPE)
Part Number
meet Rohs requirement
for low voltage MOSFET only
75N07GP
YWWSSS
Package Code
LOGO
Date Code (ywwsss)
Y:Last Digit Of The Year
WW:Week
:
Draw No. M1-P3-6-Gv09
相关型号:
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AP75N07GS
TRANSISTOR 80 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power
A-POWER
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TRANSISTOR 65 A, 100 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power
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