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AP85T08GS [A-POWER]

TRANSISTOR 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power;
AP85T08GS
型号： AP85T08GS
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

TRANSISTOR 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power

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AP85T08GS/P  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
80V  
13mΩ  
75A  
▼ Lower On-resistance  
▼ Fast Switching Characteristic  
G
Description  
The Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
G
D
S
TO-263(S)  
TO-220(P)  
The TO-263 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP85T08GP) are available for low-profile applications.  
G
D
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
80  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
75  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
48  
A
260  
138  
1.11  
450  
30  
A
PD@TC=25℃  
Total Power Dissipation  
W
Linear Derating Factor  
Single Pulse Avalanche Energy3  
W/℃  
mJ  
A
EAS  
IAR  
Avalanche Current  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
℃
℃
Thermal Data  
Symbol  
Parameter  
Value  
0.9  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
62  
Data and specifications subject to change without notice  
200912072-1/4  
AP85T08GS/P  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min.  
80  
-
Typ.  
Max.  
Units  
V
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=45A  
VGS=0V, ID=1mA  
-
-
-
-
13  
3
mΩ  
V
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
1
gfs  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=150oC)  
Gate-Source Leakage  
Total Gate Charge2  
VDS=10V, ID=45A  
VDS=80V, VGS=0V  
VDS=64V ,VGS=0V  
VGS= ±20V  
ID=45A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
70  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
10  
-
100  
IGSS  
-
±100  
Qg  
63  
23  
38  
30  
100  
144  
173  
100  
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=64V  
-
-
-
-
-
-
VGS=4.5V  
VDS=40V  
ID=45A  
td(off)  
tf  
Turn-off Delay Time  
RG=10Ω,VGS=10V  
RD=0.89Ω  
VGS=0V  
Fall Time  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
6300 10080  
Output Capacitance  
VDS=25V  
670  
350  
1.1  
-
-
Reverse Transfer Capacitance  
Gate Resistance  
f=1.0MHz  
f=1.0MHz  
1.7  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
Min.  
Typ.  
-
Max.  
Units  
V
VSD  
trr  
IS=45A, VGS=0V  
IS=20A, VGS=0V  
dI/dt=100A/µs  
-
-
-
1.3  
ns  
47  
86  
-
-
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.  
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.  
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT  
DEVICE OR SYSTEM ARE NOT AUTHORIZED.  
2/4  
AP85T08GS/P  
120  
90  
60  
30  
0
250  
200  
150  
100  
50  
T C = 150 o  
C
10V  
7.0 V  
10V  
7.0 V  
5.0V  
T C = 25 o  
C
4.5V  
5.0V  
4.5V  
V
G =3.0V  
V G =3.0V  
0
0
3
6
9
12  
0
3
6
9
12  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
14  
13  
12  
11  
10  
2.0  
1.6  
1.2  
0.8  
0.4  
I D =45A  
I D =20A  
T
C =25 o C  
V
G =10V  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.0  
1.5  
1.0  
0.5  
0.0  
50  
40  
30  
20  
10  
0
T j =150 o C  
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP85T08GS/P  
f=1.0MHz  
12  
10000  
I
D = 45 A  
C iss  
10  
8
V DS = 4 0 V  
V
V
DS = 50 V  
DS = 64 V  
6
1000  
C oss  
C rss  
4
2
100  
0
1
5
9
13  
17  
21  
25  
29  
0
20  
40  
60  
80  
100  
V DS ,Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
Duty factor=0.5  
0.2  
0.1  
100us  
1ms  
0.1  
0.05  
PDM  
0.02  
t
0.01  
T
T c =25 o C  
10ms  
Duty factor = t/T  
Single Pulse  
100ms  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
DC  
1
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
120  
80  
40  
0
VG  
V
DS =5V  
T j =25 o C  
T j =150 o C  
QG  
4.5V  
QGD  
QGS  
Q
Charge  
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4/4  
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-263  
E
Millimeters  
SYMBOLS  
MIN  
NOM MAX  
A
A1  
A2  
b
4.25  
0.00  
2.20  
0.70  
1.07  
0.30  
1.15  
8.30  
4.75  
0.15  
2.45  
0.90  
1.27  
0.45  
1.30  
8.90  
5.20  
0.30  
2.70  
1.10  
1.47  
0.60  
1.45  
9.40  
D
b1  
c
c1  
D
b1  
b
L2  
E
9.70 10.10 10.50  
L3  
e
2.04  
-----  
4.50  
-----  
2.54  
1.50  
4.90  
1.50  
3.04  
-----  
5.30  
----  
L2  
L3  
L4  
L4  
A2  
e
A
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
c
θ
c1  
A1  
Part Marking Information & Packing : TO-263  
Part Number  
Package Code  
85T08GS  
meet Rohs requirement  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-220  
E1  
A
E
Millimeters  
SYMBOLS  
MIN  
NOM  
4.48  
0.80  
1.38  
0.50  
1.20  
MAX  
φ
L1  
L5  
L2  
A
b
4.25  
0.65  
1.15  
0.40  
1.00  
4.70  
0.90  
1.60  
0.60  
1.40  
c1  
b1  
c
c1  
E
9.70 10.00 10.40  
E1  
e
---  
---  
11.50  
----  
D
L4  
----  
2.54  
L
12.70 13.60 14.50  
L1  
L2  
L3  
L4  
L5  
φ
D
2.60  
1.00  
2.6  
2.80  
1.40  
3.10  
3.00  
1.80  
3.6  
b1  
L3  
14.70 15.50  
16  
6.30  
3.50  
8.40  
6.50  
3.60  
8.90  
6.70  
3.70  
9.40  
L
c
b
1.All Dimensions Are in Millimeters.  
2.Dimension Does Not Include Mold Protrusions.  
e
Part Marking Information & Packing : TO-220  
Part Number  
meet Rohs requirement  
Package Code  
85T08GP  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS
：
Sequence  

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