AP9120GJ-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9120GJ-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9120GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
-200V
680mΩ
-8A
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
G
D
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9120GJ) is
available for low-profile applications.
S
TO-252(H)
TO-251(J)
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
-200
+20
-8
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
A
-5
A
30
A
PD@TC=25℃
Total Power Dissipation
96
W
Linear Derating Factor
0.77
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
1.3
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Rthj-a
62.5
110
Rthj-a
Data and specifications subject to change without notice
1
201005242
AP9120GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
VGS=0V, ID=-250uA
-200
-
-
-
-
-
V
680 mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-2
-4
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=-160V, VGS=0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
VDS=-200V, VGS=0V
-25
-
-250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V, VDS=0V
ID=-5A
-
+100
35
6
56
Qgs
Qgd
td(on)
tr
VDS=-160V
VGS=-10V
VDS=-100V
ID=-5A
-
15
13.5
16
52
25
1210
170
45
3.6
-
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=10Ω
-
VGS=-10V
VGS=0V
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
-
VDS=-25V
f=1.0MHz
f=1.0MHz
-
5.4
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=-5A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=-100A/µs
-
-
-
-
200
2
-1.3
V
ns
uC
-
-
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9120GH/J-HF
20
16
12
8
12
10
8
-10V
-8.0V
-7.0V
-6.0V
-10V
-8.0V
-7.0V
T C = 1 5 0 o C
T C =25 o C
-6.0V
6
V G = -5.0V
V G = - 5.0V
4
4
2
0
0
0
4
8
12
16
20
24
0
4
8
12
16
20
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
700
2.4
1.9
1.4
0.9
0.4
I D = -4 A
I D =- 4 A
T
C =25 ℃
V
G =-10V
660
620
580
540
500
Ω
4
5
6
7
8
9
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.1
0.7
0.3
4
3
2
1
0
T j =150 o
C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9120GH/J-HF
f=1.0MHz
12
2000
1600
1200
800
400
0
I D = -5A
V
DS = -160V
10
8
C iss
6
4
2
C oss
C rss
25
0
1
5
9
13
17
21
29
0
10
20
30
40
50
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
Operation in this area
100us
limited by R
DS(ON)
0.2
0.1
1ms
0.1
0.05
PDM
10ms
t
100ms
0.02
T
DC
0.01
T C =25 o C
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.1
0.01
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
-10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
相关型号：
©2020 ICPDF网 联系我们和版权申明