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AP9408GH [A-POWER]

Lower Gate Charge, Simple Drive Requirement; 更低的栅极电荷，简单的驱动要求
AP9408GH
型号： AP9408GH
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Lower Gate Charge, Simple Drive Requirement
更低的栅极电荷，简单的驱动要求

晶体 栅极 晶体管 功率场效应晶体管 开关 脉冲 驱动
文件： 总4页 (文件大小：105K)
中文：  中文翻译
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AP9408GH/J  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
30V  
10mΩ  
57A  
▼ Simple Drive Requirement  
G
▼ Fast Switching Characteristic  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
D
S
TO-252(H)  
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters. The through-hole version (AP9408GJ) are  
available for low-profile applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
ID@TC=25℃  
ID@TC=100℃  
IDM  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current1  
57  
A
41  
A
228  
A
PD@TC=25℃  
Total Power Dissipation  
53.6  
W
W/℃  
℃
℃
Linear Derating Factor  
0.36  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient (PCB mount)3  
2.8  
Rthj-a  
62.5  
110  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient  
Data & specifications subject to change without notice  
1
200903055  
AP9408GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
30  
-
-
0.02  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=250uA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance2 VGS=10V, ID=30A  
-
10  
V
GS=4.5V, ID=20A  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=30A  
VDS=30V, VGS=0V  
2.5  
Forward Transconductance  
Drain-Source Leakage Current  
40  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
1
Drain-Source Leakage Current (Tj=125oC) VDS=24V, VGS=0V  
-
250  
IGSS  
Qg  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=+20V, VDS=0V  
ID=10A  
-
+100  
13  
2.2  
7
21  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=24V  
VGS=4.5V  
VDS=15V  
-
8
-
ID=1A  
6
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=15Ω  
24  
9
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
860 1380  
VDS=25V  
210  
150  
2
-
-
f=1.0MHz  
f=1.0MHz  
3
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=30A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
23  
17  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9408GH/J  
120  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
T C =175 o C  
T C =25 o C  
10V  
7.0 V  
5.0V  
4.5 V  
10V  
7 .0V  
5.0V  
4.5 V  
V G =3.0V  
V G = 3.0 V  
0.0  
1.0  
2.0  
3.0  
4.0  
0.0  
2.0  
4.0  
6.0  
8.0  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.0  
1.6  
1.2  
0.8  
0.4  
14  
12  
10  
8
I D =30A  
I D =20A  
T
C =25 o C  
V
G =10V  
Ω
6
-50  
0
50  
100  
150  
200  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.2  
0.8  
0.4  
0.0  
30  
20  
10  
0
T j =175 o C  
T j =25 o C  
0
0.4  
0.8  
1.2  
-50  
0
50  
100  
150  
200  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9408GH/J  
f=1.0MHz  
16  
10000  
1000  
100  
I D =10A  
DS =16V  
12  
V
V
DS =20V  
DS =24V  
V
8
C iss  
4
C oss  
C rss  
0
1
5
9
13  
17  
21  
25  
29  
0
10  
20  
30  
V DS ,Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1000  
100  
10  
1
1
Duty factor = 0.5  
0.2  
100us  
0.1  
0.1  
1ms  
0.05  
10ms  
100ms  
DC  
PDM  
t
0.02  
T
0.01  
T C =25 o C  
Duty Factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
0
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS ,Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
120  
V DS =5V  
VG  
100  
80  
60  
40  
20  
0
T j =25 o C  
T j =175 o C  
QG  
4.5V  
QGD  
QGS  
Q
Charge  
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Gate Charge Waveform  
4

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