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AP9470GM-HF [A-POWER]

Low On-resistance, Simple Drive Requirement; 低导通电阻，简单的驱动要求
AP9470GM-HF
型号： AP9470GM-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Low On-resistance, Simple Drive Requirement
低导通电阻，简单的驱动要求

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 驱动
文件： 总4页 (文件大小：99K)
中文：  中文翻译
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AP9470GM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low On-resistance  
BVDSS  
RDS(ON)  
ID  
40V  
D
D
D
▼ Simple Drive Requirement  
13.5mΩ  
10.2A  
D
▼ Fast Switching Characteristic  
G
S
▼ RoHS Compliant & Halogen-Free  
S
S
SO-8  
Description  
D
S
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The SO-8 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
10.2  
A
8.1  
A
40  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.5  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
℃/W  
Data and specifications subject to change without notice  
1
200911191  
AP9470GM-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=10A  
VGS=0V, ID=250uA  
40  
-
-
-
-
-
V
13.5 mΩ  
VGS=4.5V, ID=6A  
-
36  
mΩ  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=VGS, ID=250uA  
VDS=10V, ID=6A  
VDS=32V, VGS=0V  
VGS=+20V, VDS=0V  
ID=6A  
1.7  
-
3
V
gfs  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18  
-
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
10  
-
+100  
Qg  
11  
3.3  
6.6  
7.5  
7.5  
21  
8
17.6  
Qgs  
Qgd  
td(on)  
tr  
VDS=20V  
-
-
-
-
-
-
VGS=4.5V  
VDS=20V  
ID=1A  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=20Ω  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
730 1170  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=25V  
120  
95  
-
-
-
f=1.0MHz  
f=1.0MHz  
1.4  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=2.1A, VGS=0V  
IS=6A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
17  
10  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9470GM-HF  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
T A = 150 o  
C
T A = 25 o  
C
10 V  
7.0 V  
6.0 V  
5.0 V  
10 V  
7.0 V  
6.0 V  
5.0 V  
V G =4.0V  
V G =4.0V  
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
35  
1.9  
1.4  
0.9  
0.4  
I D = 6 A  
I D = 10 A  
T
A =25 ℃  
V
G =10V  
30  
25  
20  
15  
10  
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.2  
0.8  
0.4  
0.0  
10  
T j =150 o  
C
T j =25 o  
C
8
6
4
2
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9470GM-HF  
f=1.0MHz  
10  
1000  
800  
600  
400  
200  
0
I
D = 6 A  
V DS = 20 V  
8
6
4
2
0
C iss  
C oss  
C rss  
0
4
8
12  
16  
20  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
0.2  
Operation in this area  
limited by R  
DS(ON)  
10  
100us  
0.1  
0.1  
0.05  
1ms  
0.02  
0.01  
1
10ms  
PDM  
100ms  
0.01  
t
Single Pulse  
T
0.1  
1s  
Duty factor = t/T  
T A =25 o  
C
Peak Tj = PDM x Rthja + Ta  
Rthja=125oC/W  
DC  
Single Pulse  
0.01  
0.001  
0.0001  
0.01  
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
100  
1000  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VDS  
VG  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Charge  
Q
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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