AP9575GM [A-POWER]
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic; 更低的栅极电荷,简单的驱动要求,快速开关特性![AP9575GM](http://pdffile.icpdf.com/pdf2/p00211/img/icpdf/AP9575_1190121_icpdf.jpg)
型号: | AP9575GM |
厂家: | ![]() |
描述: | Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic |
文件: | 总4页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9575GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
BVDSS
RDS(ON)
ID
-60V
90mΩ
-4A
D
D
D
▼ Simple Drive Requirement
D
▼ Fast Switching Characteristic
G
S
S
S
SO-8
Description
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
-60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
±25
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
-4.0
A
-3.2
A
-20
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
50
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201204072
AP9575GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=-10V, ID=-4A
VGS=0V, ID=-250uA
-60
-
-
-
-
V
-
-
90
mΩ
VGS=-4.5V, ID=-3A
120 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
VDS=-10V, ID=-4A
VDS=-60V, VGS=0V
VDS=-48V, VGS=0V
VGS=±25V
-1
-
-
4
-3
V
gfs
Forward Transconductance
-
S
IDSS
Drain-Source Leakage Current
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
-
-10
Drain-Source Leakage Current (T=70oC)
-
-
-100
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
-
±100
ID=-4A
-
14
3.3
8
28
-
Qgs
Qgd
td(on)
tr
VDS=-48V
-
VGS=-4.5V
-
-
VDS=-30V
-
8
-
ID=-1A
-
5
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=-10V
RD=30Ω
-
46
23
-
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
-
1100 2790
VDS=-25V
-
115
90
-
-
f=1.0MHz
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=-2A, VGS=0V
Min. Typ. Max. Units
VSD
trr
-
-
-
-
-1.2
V
IS=-4A, VGS=0V,
dI/dt=100A/µs
33
50
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9575GM
50
40
30
20
10
0
40
30
20
10
0
-10V
-7.0V
-5.0V
T A = 25 o
C
A = 1 5 0 o
C
-10V
-7.0V
-5.0V
T
-4.5V
-4.5V
V G = -3.0 V
V G = -3.0 V
0
2
4
6
8
10
0
2
4
6
8
10
12
14
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
1.6
1.2
0.8
0.4
I D = - 3 A
I D = -4 A
V
G =-10V
T
A =25 ℃
90
Ω
80
70
60
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.4
1.2
1
8
6
T j =150 o C
T j =25 o C
4
0.8
0.6
0.4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9575GM
f=1.0MHz
14
10000
1000
100
I D = -4A
12
V
DS = - 48 V
10
8
C iss
6
C oss
C rss
4
2
0
10
0
10
20
30
40
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
0.2
10
0.1
0.1
100us
1ms
0.05
1
0.02
0.01
PDM
10ms
100ms
1s
0.01
t
T
Single Pulse
0.1
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
T A =25 o C
DC
Single Pulse
0.01
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGD
QGS
10%
VGS
tr
td(on)
td(off)tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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