AP95T07GS [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET


型号：	AP95T07GS
厂家：	ADVANCED POWER ELECTRONICS CORP.
描述：	N-CHANNEL ENHANCEMENT MODE POWER MOSFET N沟道增强型功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲
文件：	总5页 (文件大小：153K)
中文：	中文翻译
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AP95T07GS

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

75V

5mΩ

80A

▼ Lower On-resistance

▼ Fast Switching Characteristic

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

TO-263(S)

The TO-263 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V³

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

320

P_D@T_C=25℃

Total Power Dissipation

300

Linear Derating Factor

W/℃

℃

E_AS

T_STG

T_J

Single Pulse Avalanche Energy⁴

Storage Temperature Range

Operating Junction Temperature Range

450

-55 to 175

℃

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁵

0.5

Rthj-a

Data and specifications subject to change without notice

200901122

AP95T07GS

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol

BV_DSS

R_DS(ON)

V_GS(th)

Parameter

Test Conditions

Min. Typ. Max. Units

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance²V_GS=10V, I_D=60A

V_GS=0V, I_D=1mA

mΩ

Gate Threshold Voltage

V_DS=V_GS, I_D=250uA

g_fs

Forward Transconductance

V_DS=10V, I_D=60A

V_DS=75V, V_GS=0V

I_DSS

Drain-Source Leakage Current

Drain-Source Leakage Current (T_j=125^oC) V_DS=60V ,V_GS=0V

Ω

250

I_GSS

Q_g

Gate-Source Leakage

Total Gate Charge²

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time²

Rise Time

V_GS= +20V, V_DS=0V

I_D=80A

+100

160

165

135

Q_gs

Q_gd

t_d(on)

t_r

V_DS=40V

V_GS=10V

V_DS=40V

I_D=80A

t_d(off)

t_f

Turn-off Delay Time

Fall Time

R_G=3.3Ω,V_GS=10V

R_D=0.5Ω

C_iss

C_oss

C_rss

R_g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

V_GS=0V

4290 6870

V_DS=25V

985

390

1.2

f=1.0MHz

1.8

Source-Drain Diode

Symbol

Parameter

Forward On Voltage²

Reverse Recovery Time²

Test Conditions

Min. Typ. Max. Units

V_SD

t_rr

I_S=60A, V_GS=0V

I_S=40A, V_GS=0V

dI/dt=100A/µs

1.3

Q_rr

Reverse Recovery Charge

190

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Package limitation current is 80A, calculated continuous current

based on maximum allowable junction temperature is 169A.

4.Starting T_j=25^oC , L=1mH , I_AS=30A.

5.Surface mounted on 1 in²copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP95T07GS

250

200

150

100

120

100

T _C= 25 ^o

_C= 1 75 ^o

10 V

9.0 V

8.0 V

7.0 V

10V

9.0V

8.0V

7.0V

V _G= 6.0 V

_G= 6.0 V

200

V _DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

2.4

I _D=60A

I _D=30A

_C=25 ^oC

_G=10V

2.0

1.6

1.2

0.8

0.4

-50

100

150

T _j, Junction Temperature ( ^oC)

V _GSGate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

1.4

1.2

T _j=175 ^oC

T _j=25 ^oC

0.8

0.6

0.4

0.2

0.4

0.6

0.8

1.2

1.4

-50

100

150

T _j,Junction Temperature ( ^oC)

V _SD, Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

AP95T07GS

f=1.0MHz

10000

1000

100

I _D= 80 A

C _iss

V _DS= 40 V

_DS= 48 V

_DS= 64 V

C _oss

C _rss

100

120

Q _G, Total Gate Charge (nC)

V _DS,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

100

Duty factor=0.5

100us

0.2

0.1

1ms

0.1

0.05

10ms

P_DM

0.02

100ms

0.01

Duty factor = t/T

T _c=25 ^o

Single Pulse

Peak T_j= P_DMx R_thjc+ T_C

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

0.1

100

1000

V _DS, Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

V_G

V_DS

90%

Q_G

10V

Q_GD

Q_GS

10%

V_GS

t_r

t_d(on)

t_d(off)t_f

Charge

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

ADVANCED POWER ELECTRONICS CORP.

Package Outline : TO-263

SYMBOLS

Millimeters

MIN

4.25

0.00

2.20

0.70

1.07

0.30

1.15

8.30

NOM

4.75

MAX

5.20

0.30

2.70

1.10

1.47

0.60

1.45

9.40

0.15

2.45

0.90

1.27

0.45

1.30

8.90

5.10(ref)

1.27(ref)

10.10

7.40(ref)

6.40(ref)

8.00(ref)

2.54

9.70

2.04

10.50

3.04

2.54(ref)

1.50

4.50

0°

4.90

5.30

5°

1.50

-----

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-263

Part Number

meet Rohs requirement

for low voltage MOSFET only

95T07GS

Package Code

LOGO

YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

AP95T07GS [A-POWER]

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