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AP9915GK [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9915GK
型号： AP9915GK
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总4页 (文件大小：96K)
中文：  中文翻译
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AP9915GK  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
20V  
50mΩ  
6.2A  
D
▼ Lower Gate Charge  
▼ Fast Switching Characteristic  
▼ RoHS Compliant  
S
D
SOT-223  
G
Description  
D
S
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
low on-resistance and cost-effectiveness.  
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
20  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±12  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
6.2  
A
5
A
30  
A
PD@TA=25℃  
Total Power Dissipation  
Linear Derating Factor  
Storage Temperature Range  
3.2  
W
0.025  
-55 to 150  
-55 to 150  
W/℃  
℃
℃
TSTG  
TJ  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
40  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
℃/W  
Data and specifications subject to change without notice  
200615051-1/4  
AP9915GK  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
20  
-
-
0.03  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A  
-
50  
V
GS=2.5V, ID=4A  
-
0.5  
-
-
-
80  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=5A  
VDS=20V, VGS=0V  
VDS=16V ,VGS=0V  
VGS=±12V  
1.2  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=70oC)  
13  
-
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
1
-
-
25  
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
-
-
±100  
Qg  
ID=10A  
-
5
8
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
VDS=16V  
-
1
VGS=4.5V  
-
2
VDS=10V  
-
8
ID=10A  
-
55  
10  
3
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=5V  
RD=1Ω  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VGS=0V  
-
360 580  
VDS=20V  
-
70  
50  
-
-
-
f=1.0MHz  
-
f=1.0MHz  
-
0.78  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
Reverse Recovery Time2  
IS=2.5A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
17  
9
1.3  
V
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
3.t≦10sec , Surface mounted on 1 in2 copper pad of FR4 board.  
2/4  
AP9915GK  
50  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
T A =25 o C  
T A =150 o C  
4.5V  
3.5V  
4.5V  
3.5V  
2.5V  
2.5V  
V G =1.5V  
V G =1.5V  
0
1
2
3
4
5
6
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
80  
70  
60  
50  
40  
30  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D = 4 A  
I
D =6A  
T
A =25 o C  
V G =4.5V  
Ω
1
2
3
4
5
6
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
100  
1.2  
0.95  
0.7  
10  
1
T j =150 o C  
T j =25 o C  
0.1  
0.45  
0.01  
0.2  
0
0.4  
0.8  
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C )  
V SD , Source -to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP9915GK  
f=1.0MHz  
C iss  
14  
1000  
100  
10  
I D =6A  
12  
V DS =16V  
10  
8
V
V
DS =12V  
DS =10V  
6
C oss  
C rss  
4
2
0
0
2
4
6
8
10  
12  
14  
1
5
9
13  
17  
21  
25  
29  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
Duty factor=0.5  
0.2  
10  
0.1  
0.1  
0.05  
1ms  
0.02  
0.01  
1
10ms  
100ms  
1s  
PDM  
Single Pulse  
t
0.01  
T
10s  
0.1  
T A =25 o C  
Duty factor = t/T  
DC  
Peak Tj = PDM x Rthja + Ta  
Rthja=90oC/W Per Unit Base  
Single Pulse  
0.001  
0.0001  
0.01  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
t
Q
td(on) tr  
d(off) tf  
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4/4  

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