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AP9962AGH [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9962AGH
型号： AP9962AGH
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
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AP9962AGH  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low On-resistance  
BVDSS  
RDS(ON)  
ID  
40V  
20mΩ  
32A  
D
S
▼ Single Drive Requirement  
▼ Surface Mount Package  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
G
D
TO-252(H)  
S
The TO-252 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
32  
A
20  
A
120  
A
PD@TC=25℃  
Total Power Dissipation  
27.8  
W
Linear Derating Factor  
0.22  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
℃/W  
℃/W  
Rthj-c  
Maixmum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4.5  
Rthj-a  
110  
Data and specifications subject to change without notice  
1
200810282  
AP9962AGH  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=20A  
VGS=0V, ID=250uA  
40  
-
-
-
-
-
V
20  
30  
mΩ  
mΩ  
VGS=4.5V, ID=16A  
-
VGS(th)  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=20A  
VDS=40V, VGS=0V  
VDS=32V ,VGS=0V  
VGS=±20V  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40  
-
3
V
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Drain-Source Leakage Current (Tj=150oC)  
Gate-Source Leakage  
Total Gate Charge2  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
10  
-
25  
IGSS  
Qg  
-
±100  
ID=20A  
12  
2.7  
7.8  
7
20  
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=32V  
VGS=4.5V  
-
VDS=20V  
-
ID=20A  
46  
20  
6
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=1.0Ω  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
VGS=0V  
820 1800  
Output Capacitance  
Reverse Transfer Capacitance  
VDS=25V  
95  
90  
-
-
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
IS=32A, VGS=0V  
Min. Typ. Max. Units  
VSD  
trr  
-
-
-
-
1.2  
V
IS=10A, VGS=0V,  
dI/dt=100A/µs  
19  
13  
-
-
ns  
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9962AGH  
100  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
T C =25 o  
C
10V  
7.0V  
T C =150 o  
C
10V  
7.0V  
5.0V  
4.5V  
5.0V  
4.5V  
V G =3.0V  
V G =3.0V  
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
28  
24  
20  
16  
12  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =16A  
I D =20A  
C =25 o  
C
V
G =10V  
T
Ω
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.4  
1.2  
1
16  
12  
8
T j =150 o  
C
T j =25 o  
C
0.8  
0.6  
0.4  
4
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9962AGH  
f=1.0MHz  
14  
10000  
1000  
100  
I D =20A  
12  
V DS =20V  
DS =24V  
DS =32V  
10  
8
V
V
Ciss  
6
Coss  
Crss  
4
2
10  
0
1
5
9
13  
17  
21  
25  
29  
0
5
10  
15  
20  
25  
30  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
1000  
100  
10  
Duty factor=0.5  
0.2  
0.1  
100us  
0.1  
0.05  
PDM  
t
1ms  
10ms  
100ms  
DC  
0.02  
T
1
0.01  
Duty factor = t/T  
T C =25 o  
Single Pulse  
C
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.1  
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4
ADVANCED POWER ELECTRONICS CORP.  
Package Outline : TO-252  
Millimeters  
D
SYMBOLS  
MIN  
NOM MAX  
D1  
A2  
A3  
B1  
D
1.80  
0.40  
0.40  
6.00  
4.80  
3.50  
2.20  
0.50  
5.10  
0.50  
--  
2.30  
0.50  
0.70  
6.50  
5.35  
4.00  
2.63  
0.85  
5.70  
1.10  
2.30  
0.50  
2.80  
0.60  
1.00  
7.00  
5.90  
4.50  
3.05  
1.20  
6.30  
1.80  
--  
E2  
D1  
E3  
F
E3  
E1  
F1  
E1  
E2  
e
C
0.35  
0.65  
B1  
F1  
F
1.All Dimensions Are in Millimeters.  
e
e
2.Dimension Does Not Include Mold Protrusions.  
R : 0.127~0.381  
A2  
(0.1mm  
C
A3  
Part Marking Information & Packing : TO-252  
Laser Marking  
Part Number  
Meet Rohs requirement  
for low voltage MOSFET only  
9962AGH  
Package Code  
LOGO  
YWWSSS  
Date Code (YWWSSS)  
Y：Last Digit Of The Year  
WW：Week  
SSS：Sequence  
5

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