AP9966GM-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9966GM-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9966GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Lower Gate Charge
BVDSS
RDS(ON)
ID
40V
16.8mΩ
8.3A
D2
D2
D1
▼ Simple Drive Requirement
D1
▼ RoHS Compliant & Halogen-Free
G2
S2
G1
S1
SO-8
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
S2
D1
S1
G2
G1
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
40
+20
Gate-Source Voltage
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
8.3
A
6.6
A
30
A
PD@TA=25℃
TSTG
Total Power Dissipation
2
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
200907031
AP9966GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=8A
VGS=0V, ID=250uA
40
-
-
-
-
-
V
16.8 mΩ
VGS=4.5V, ID=5A
-
24
mΩ
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=VGS, ID=250uA
VDS=10V, ID=8A
VDS=40V, VGS=0V
VGS=+20V, VDS=0V
ID=8A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
+100
Qg
8.5
1.8
5
13.6
Qgs
Qgd
td(on)
tr
VDS=20V
-
-
-
-
-
-
VGS=4.5V
VDS=20V
6.6
7
ID=1A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=20Ω
19.5
8.3
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
650 1040
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
155
90
2
-
-
-
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=1.7A, VGS=0V
IS=8A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
24
19
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9966GM-HF
40
30
20
10
0
40
30
20
10
0
T A = 150 o
C
T A = 25 o
C
10V
7.0V
6.0V
10V
7.0V
6.0V
5.0V
V G = 4.0V
5.0V
V G = 4.0V
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
18
16
14
12
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I D = 8 A
I D = 5 A
V
G =10V
T
A =25 ℃
Ω
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
2
0
T j =150 o
C
T j =25 o
C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9966GM-HF
f=1.0MHz
1000
800
600
400
200
0
10
I
D = 8 A
8
6
4
2
0
V DS = 20V
C iss
C oss
C rss
0
4
8
12
16
20
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
0.2
10
100us
0.1
0.1
0.05
1ms
10ms
100ms
1s
1
0.02
0.01
PDM
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
0.1
Rthja = 135℃/W
T A =25 o
C
Single Pulse
DC
0.01
0.001
0.0001
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
tr
td(on)
td(off)tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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