AP9971AGH-HF [A-POWER]
暂无描述;型号: | AP9971AGH-HF |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | 暂无描述 晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 |
文件: | 总5页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9971AGD
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D2
▼ Low On-resistance
BVDSS
RDS(ON)
ID
60V
50mΩ
5A
D2
D1
▼ Fast Switching Speed
▼ PDIP-8 Package
D1
G2
S2
PDIP-8
G1
S1
Description
D2
S2
D1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
G1
Absolute Maximum Ratings
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Rating
60
Units
V
VDS
VGS
+25
V
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
ID@TA=25℃
ID@TA=70℃
IDM
5
3.2
A
A
20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
-55 to 150
-55 to 150
W/℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Parameter
Value
62.5
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
200809222
AP9971AGD
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=5A
VGS=0V, ID=250uA
60
-
-
-
-
-
V
50
60
mΩ
mΩ
VGS=4.5V, ID=2.5A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=5A
VDS=60V, VGS=0V
VDS=48V ,VGS=0V
VGS=+25V
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.8
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T=70oC)
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
-
25
j
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
+100
ID=5A
17.5
2
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=10V
6.3
5.5
12
18
4
VDS=30V
ID=5A
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=6Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
650 1040
VDS=25V
85
60
-
-
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
IS=1.6A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
VSD
trr
-
-
-
-
1.2
V
27
32
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3. Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971AGD
20
16
12
8
20
16
12
8
T A =25 o C
10V
7.0V
5.0V
4.5V
V G =4.0V
T A =150 o C
10V
7.0V
5.0V
4.5V
V G =4.0V
4
4
0
0
0
2
4
6
8
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
60
50
40
30
2.0
I D =3A
A =25 o C
I
D =5A
T
V G =10V
1.6
1.2
0.8
0.4
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.6
8
2.2
1.8
1.4
1
T j =150 o C
T j =25 o C
6
4
2
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j ,Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971AGD
f=1.0MHz
14
10000
1000
100
I D =5A
12
V DS =30V
DS =36V
DS =48V
10
8
V
V
Ciss
6
Coss
Crss
4
2
10
0
1
5
9
13
17
21
25
29
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty foctor=0.5
0.2
10
100us
0.1
0.05
0.1
1ms
10ms
100ms
1s
1
0.02
0.01
PDM
t
0.01
Single Pulse
T
0.1
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
T A =25 o
Single Pulse
C
Rthja=90℃/W
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : PDIP-8
Millimeters
SYMBOLS
MIN
3.60
0.38
2.90
0.36
1.10
0.76
0.20
9.00
6.10
7.62
8.30
NOM
MAX
5.40
----
A
A1
A2
B
4.50
----
3.95
5.00
0.56
1.80
1.20
0.36
10.20
7.20
8.26
11.00
E
0.46
B1
B2
C
1.45
A2
A
0.98
A1
0.28
B2
D
D
9.60
L
E
6.65
E1
E2
e
7.94
e
B1
C
9.65
B
2.540 BSC
----
E1
L
3.18
----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
E2
Part Marking Information & Packing : PDIP-8
Part Number
Package Code
meet Rohs requirement
9971AGD
YWWSSS
for low voltage MOSFET only
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
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