AP9971AGS [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET型号: | AP9971AGS |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总6页 (文件大小:203K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9971AGS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
60V
36mΩ
22A
▼ Lower On-resistance
▼ Fast Switching Characteristic
G
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
TO-220(P)
D
S
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9971AGP)
are available for low-profile applications.
G
D
TO-263(S)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
22
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
14
A
80
A
PD@TC=25℃
TSTG
Total Power Dissipation
34.7
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
3.6
62
Rthj-a
Data and specifications subject to change without notice
1
200811212
AP9971AGS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=15A
VGS=0V, ID=1mA
60
-
-
-
-
-
V
36
50
mΩ
mΩ
V
GS=6V, ID=10A
-
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=15A
VDS=60V, VGS=0V
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
V
gfs
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=150oC) VDS=48V ,VGS=0V
16
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
-
100
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V
ID=15A
-
+100
17
2.5
6.4
6.6
22
17
4.3
27
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=10V
VDS=30V
ID=15A
-
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=2Ω
-
-
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
625 1000
VDS=25V
f=1.0MHz
90
65
-
-
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Reverse Recovery Time2
Test Conditions
Min. Typ. Max. Units
V
VSD
trr
IS=15A, VGS=0V
IS=15A, VGS=0V
dI/dt=100A/µs
-
-
-
-
1.3
ns
27
26
-
-
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971AGS/P
80
60
40
20
0
50
40
30
20
10
0
T C = 150 o
C
10 V
7 .0 V
T C = 25 o
C
10 V
7 .0 V
5.0 V
4.5 V
5.0 V
4.5 V
V G = 4.0 V
V
G = 4 .0V
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
40
30
20
2.0
1.6
1.2
0.8
0.4
I D =10A
I D =15A
T
C =25 o
C
V
G =10V
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
1.3
1.1
0.9
0.7
0.5
20
16
12
8
T j =150 o
C
T j =25 o
C
4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971AGS/P
f=1.0MHz
1000
12
I D = 15 A
C iss
10
V DS = 30 V
8
6
4
2
0
V DS = 36 V
V
DS = 48 V
100
C oss
C rss
10
0
4
8
12
16
20
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
100us
1ms
0.2
10
0.1
0.1
0.05
PDM
1
t
0.02
10ms
100ms
DC
T
0.01
T c =25 o
C
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
tr
td(on)
td(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
E3
SYMBOLS
Millimeters
E1
E2
MIN
4.25
0.00
2.20
0.70
1.07
0.30
1.15
8.30
NOM
4.75
MAX
D2
A
A1
A2
b
5.20
0.30
2.70
1.10
1.47
0.60
1.45
9.40
0.15
2.45
D1
0.90
D
b1
c
1.27
0.45
c1
D
1.30
8.90
b1
b
D1
D2
E
5.10(ref)
1.27(ref)
10.10
7.40(ref)
6.40(ref)
8.00(ref)
2.54
L2
L3
9.70
2.04
10.50
3.04
E1
E2
E3
e
e
L4
A2
L1
L2
L3
L4
θ
2.54(ref)
1.50
A
4.50
0°
4.90
5.30
5°
1.50
-----
c
θ
c1
1.All Dimensions Are in Millimeters.
A1
2.Dimension Does Not Include Mold Protrusions.
L1
Part Marking Information & Packing : TO-263
Part Number
meet Rohs requirement
for low voltage MOSFET only
9971AGS
Package Code
LOGO
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
MIN
4.25
0.65
1.15
0.40
1.00
9.70
---
NOM
4.48
0.80
1.38
0.50
1.20
MAX
φ
L1
L5
L2
A
b
4.70
0.90
1.60
0.60
1.40
c1
b1
c
c1
E
10.00 10.40
E1
e
---
11.50
----
D
L4
----
2.54
L
12.70 13.60 14.50
L1
L2
L3
L4
L5
φ
D
2.60
1.00
2.60
2.80
1.40
3.10
3.00
1.80
3.60
b1
L3
14.70 15.50 16.00
6.30
3.50
8.40
6.50
3.70
8.90
6.70
3.90
9.40
L
c
b
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
meet Rohs requirement
Part Number
for low voltage MOSFET only
Package Code
9971AGP
LOGO
YWWSSS
Date Code (ywwsss)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
6
相关型号:
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