AP9972AGI [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9972AGI |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9972AGI
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
60V
16mΩ
32A
D
S
▼ Single Drive Requirement
▼ Fast Switching Performance
G
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
TO-220CFM(I)
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
60
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
32
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
A
20.3
120
31.3
A
A
PD@TC=25℃
TSTG
Total Power Dissipation
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
4
Rthj-a
65
Data and specifications subject to change without notice
1
201207192
AP9972AGI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=30A
VGS=0V, ID=250uA
60
-
-
-
-
-
V
mΩ
V
16
4
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=40A
VDS=60V, VGS=0V
2
gfs
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
44
-
-
S
IDSS
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
250
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS=+20V, VDS=0V
ID=40A
-
+100
Qg
49
13
20
14
80
27
57
80
-
Qgs
Qgd
td(on)
tr
VDS=48V
VGS=10V
-
VDS=30V
-
ID=40A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2410 3860
VDS=25V
290
240
2
-
-
f=1.0MHz
f=1.0MHz
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=30A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.3
V
48
75
-
-
ns
nC
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9972AGI
200
150
100
50
100
80
60
40
20
0
T C =25 o C
10V
9.0V
T C =150 o C
10V
9.0V
8.0V
7.0V
8.0V
7.0V
V G =6.0V
V G =6.0V
0
0
2
4
6
8
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
18
16
14
12
10
2.0
1.6
1.2
0.8
0.4
I D =30A
I D = 30 A
T
C =25 o C
V
G =10V
Ω
5
6
7
8
9
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
1.5
1.3
1.1
0.9
0.7
0.5
T j =150 o C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9972AGI
f=1.0MHz
12
4000
3000
2000
1000
0
I D = 40 A
V DS = 32 V
DS = 40 V
DS = 48 V
10
V
V
8
6
4
2
C iss
C oss
C rss
0
0
20
40
60
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
0.2
0.1
10us
100us
0.1
0.05
1ms
10ms
100ms
1s
DC
PDM
t
0.02
T
1
T C =25 o C
Duty factor = t/T
0.01
Peak Tj = PDM x Rthjc + TC
Single Pulse
Single Pulse
0.1
0.01
0.00001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
T j =25 o C
T j =150 o C
VG
V
DS =5V
60
40
20
0
QG
10V
QGD
QGS
Q
Charge
0
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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