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AP9973J [A-POWER]

N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
AP9973J
型号： AP9973J
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE
N沟道增强模式
文件： 总4页 (文件大小：75K)
中文：  中文翻译
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AP9973H/J  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
60V  
80mΩ  
14A  
D
S
▼ Single Drive Requirement  
▼ Surface Mount Package  
G
Description  
G
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D
S
TO-252(H)  
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP9973J) are available for low-profile applications.  
G
D
S
TO-251(J)  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
±20  
14  
Continuous Drain Current, VGS @ 10V  
ID@TA=25℃  
ID@TA=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
9
40  
A
A
PD@TA=25℃  
Total Power Dissipation  
27  
W
Linear Derating Factor  
0.22  
W/℃  
℃
℃
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
4.5  
Unit  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
2001023031  
AP9973H/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
60  
-
-
0.05  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=9A  
VGS=4.5V, ID=6A  
V/℃  
mΩ  
RDS(ON)  
-
80  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100 mΩ  
VGS(th)  
gfs  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=10V, ID=9A  
3
-
V
Forward Transconductance  
Drain-Source Leakage Current (T=25oC)  
8.6  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
j
VDS=60V, VGS=0V  
VDS=48V ,VGS=0V  
1
Drain-Source Leakage Current (T=150oC)  
-
25  
j
IGSS  
Qg  
± 20V  
±100  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VGS=  
-
ID=9A  
8
13  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=48V  
VGS=4.5V  
VDS=30V  
ID=9A  
3
4
-
7
-
15  
16  
3
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=3.3Ω  
VGS=0V  
-
-
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
720 1150  
VDS=25V  
f=1.0MHz  
77  
45  
-
-
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
IS=14A, VGS=0V  
IS=9A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
Reverse Recovery Time  
Reverse Recovery Charge  
28  
27  
-
-
ns  
nC  
Qrr  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
AP9973H/J  
45  
40  
35  
30  
25  
20  
15  
10  
5
32  
28  
24  
20  
16  
12  
8
T C =150 o C  
10V  
7.0V  
5.0V  
4.5V  
T C =25 o C  
10V  
7.0V  
5.0V  
4.5V  
V G =3.0V  
V G =3.0V  
4
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
90  
85  
80  
75  
70  
65  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
I
D =9A  
I D = 9 A  
T
C =25 o C  
V G =10V  
Ω
Ω
Ω
Ω
-50  
0
50  
100  
150  
3
5
7
9
11  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.5  
14  
12  
10  
8
2
1.5  
T j =25 o C  
T j =150 o C  
6
1
4
0.5  
2
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j ,Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
AP9973H/J  
f=1.0MHz  
12  
10000  
1000  
100  
I D = 9 A  
10  
V DS =48V  
8
6
4
2
0
Ciss  
V DS =38V  
V DS =30V  
Coss  
Crss  
10  
0
4
8
12  
16  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
10  
1
1
Duty factor=0.5  
1ms  
0.2  
0.1  
0.1  
10ms  
0.05  
PDM  
0.02  
0.01  
t
100ms  
1s  
DC  
T
T C =25 o C  
Single Pulse  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
0.1  
0.01  
0.1  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  

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