AP9979GH-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP9979GH-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9979GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
60V
48mΩ
20A
▼ Single Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
60
+25
Gate-Source Voltage
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
20
A
13
A
50
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
Total Power Dissipation3
34.7
W
W
℃
℃
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
3.6
Rthj-a
62.5
Data and specifications subject to change without notice
1
201206132
AP9979GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=13A
VGS=0V, ID=250uA
60
-
-
-
-
-
V
48
60
mΩ
mΩ
VGS=4.5V, ID=7A
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=10V, ID=13A
VDS=60V, VGS=0V
VGS=+25V, VDS=0V
ID=13A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
-
3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
+100
Qg
11
3
18
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=48V
VGS=4.5V
6
-
VDS=30V
7
-
ID=13A
20
19
3
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
VGS=10V
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
990 1560
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
90
70
-
-
f=1.0MHz
f=1.0MHz
1.2
2.4
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
IS=13A, VGS=0V
IS=13A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
32
37
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9979GH-HF
50
40
30
20
10
0
50
40
30
20
10
0
10V
7.0V
5.0V
T C =25 o C
10V
7.0V
T C = 150 o
C
5.0V
4.5V
4.5V
V G =3.0V
V G =3.0V
0
2
4
6
8
10
0
2
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.0
1.6
1.2
0.8
0.4
I D =13A
I D = 7 A
V
G =10V
T
C =25 o C
60
50
40
30
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
1.5
1.1
0.7
0.3
9
T j =150 o C
T j =25 o C
6
3
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9979GH-HF
f=1.0MHz
10000
1000
100
12
I D = 13 A
10
V DS = 30 V
V DS =38V
8
6
4
2
0
C iss
V
DS = 48 V
C oss
C rss
10
0
10
20
30
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
100us
1ms
0.2
10
0.1
0.1
0.05
PDM
0.02
1
t
10ms
0.01
T
100ms
Single Pulse
Duty factor = t/T
DC
T C =25 o C
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.1
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
20
10
0
VG
V
DS =5V
T j =25 o C
T j =150 o C
QG
4.5V
QGD
QGS
Q
Charge
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
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