AP9T19GJ [A-POWER]
Low Gate Charge, Capable of 2.5V gate drive; 低门电荷,有能力2.5V栅极驱动型号: | AP9T19GJ |
厂家: | ADVANCED POWER ELECTRONICS CORP. |
描述: | Low Gate Charge, Capable of 2.5V gate drive |
文件: | 总4页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AP9T19GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
BVDSS
RDS(ON)
ID
12V
16mΩ
33A
D
S
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
G
Description
G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
S
TO-252(H)
TO-251(J)
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
12
±12
Gate-Source Voltage
V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
33
A
21
A
80
A
PD@TC=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Value
5
Units
℃/W
℃/W
Rthj-c
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
110
Data and specifications subject to change without notice
201026041
AP9T19GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
12
-
-
0.01
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
V/℃
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
GS=2.5V, ID=10A
-
16
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=5V, ID=20A
VDS=12V, VGS=0V
VDS=10V ,VGS=0V
VGS=±12V
1.2
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
25
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1
-
25
IGSS
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
-
±100
Qg
ID=20A
18
2
28
-
Qgs
Qgd
td(on)
tr
VDS=10V
VGS=4.5V
9
-
VDS=10V
12
85
24
90
-
ID=20A
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=5V
RD=0.5Ω
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V
905 1450
VDS=12V
690
600
1.3
-
-
-
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage2
Test Conditions
IS=20A, VGS=0V
Min. Typ. Max. Units
1.3
VSD
-
-
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9T19GH/J
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
T C =25 o C
T C = 150 o C
5.0V
4.5V
3.5V
2.5V
5.0V
4.5V
3.5V
2.5V
V
G =1.5V
V
G =1.5V
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
1.6
1.4
1.2
1.0
0.8
0.6
I D = 10 A
T C =25 o C
I D = 20 A
V G =4.5V
20
16
12
Ω
Ω
Ω
Ω
-50
0
50
100
150
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
1.5
1.0
0.5
0.0
8
6
T j =150 o C
T j =25 o C
4
2
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP9T19GH/J
f=1.0MHz
14
10000
1000
100
I D =20A
12
V DS =6V
DS =8V
DS =10V
10
8
V
V
C iss
6
C oss
C rss
4
2
0
0
10
20
30
40
1
5
9
13
17
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
100us
1ms
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
10ms
100ms
T c =25 o C
Duty factor = t/T
Single Pulse
Peak Tj = PDM x Rthjc + TC
Single Pulse
DC
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGD
QGS
10%
VGS
tr
t
Q
td(on)
d(off)tf
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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