IRF840 [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | IRF840 |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF840
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Ease of Paralleling
BVDSS
RDS(ON)
ID
500V
0.85Ω
8A
D
S
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
G
Description
G
TO-220(P)
D
S
APEC MOSFET provide the power designer with the best combination of fast
switching , lower on-resistance and reasonable cost.
The TO-220 and package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-AC
converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
500
Gate-Source Voltage
±20
V
ID@TC=25℃
ID@TC=100℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
8
A
5.1
A
32
A
PD@TC=25℃
Total Power Dissipation
125
W
Linear Derating Factor
Single Pulse Avalanche Energy2
1
320
W/℃
mJ
A
EAS
IAR
Avalanche Current
8
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Value
Unit
℃/W
℃/W
Rthj-c
Max.
Max.
1.0
62
Rthj-a
Data & specifications subject to change without notice
200430071-1/4
IRF840
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
VGS=0V, ID=1mA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
500
-
-
-
-
0.85
4
V
Ω
V
VGS=10V, ID=4.8A
VDS=VGS, ID=250uA
-
2
gfs
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge3
VDS=10V, ID=4.8A
VDS=500V, VGS=0V
VDS=400V, VGS=0V
VGS=±20V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.2
-
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
25
-
250
IGSS
-
±100
Qg
ID=8A
45
7
72
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
VDS=400V
VGS=10V
25
12
31
48
33
-
VDD=250V
-
ID=8A
-
td(off)
tf
Turn-off Delay Time
RG=9.1Ω,VGS=10V
RD=31Ω
-
Fall Time
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
1250 2000
Output Capacitance
VDS=25V
270
85
-
-
Reverse Transfer Capacitance
Gate Resistance
f=1.0MHz
f=1.0MHz
1.6
2.4
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage3
Reverse Recovery Time3
Tj=25℃, IS=8A, VGS=0V
IS=8A, VGS=0V,
-
-
-
-
1.5
V
515
8.6
-
-
ns
uC
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25Ω
3.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
IRF840
16
12
8
8
6
4
2
0
T C =25 o
C
10V
7.0V
10V
7 .0V
6 .0V
T C =150 o
C
6.0V
5 .0 V
VG = 4. 5 V
4
5.0V
V G =4.5V
0
0
4
8
12
16
20
24
0
4
8
12
16
20
24
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
2
1
0
1.2
1.1
1
I D =4.8A
V
G =10V
0.9
0.8
-50
0
50
100
150
-50
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.4
1.2
1
8
T j = 150 o
C
T j = 25 o
C
6
4
0.8
0.6
0.4
2
0
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
IRF840
f=1.0MHz
10000
1000
100
12
10
8
I D =8A
DS =100V
DS =250V
V
V
C iss
V
DS =400V
6
C oss
C rss
4
2
0
0
10
10
20
30
40
50
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
1
1
Duty factor=0.5
100us
1ms
0.2
0.1
0.1
0.05
PDM
t
10ms
0.02
T
T c =25 o
Single Pulse
C
100m
1s
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
DC
0.01
0.1
0.00001
0.0001
0.001
0.01
0.1
1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGD
QGS
10%
VGS
t
td(on) tr
d(off) tf
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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