IRF840A [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A); 功率MOSFET （ VDSS = 500V ， RDS（ON）最大值= 0.85ohm ，ID = 8.0A ）
| 型号： | IRF840A |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
| 文件： | 总8页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91900A
SMPS MOSFET
VDSS
IRF840A
HEXFET® Power MOSFET
Applications
Rds(on) max
ID
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
500V
0.85Ω
8.0A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
G D S
TO-220AB
l Effective Coss Specified (See AN1001)
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
8.0
5.1
A
32
PD @TC = 25°C
Power Dissipation
125
W
W/°C
V
Linear Derating Factor
1.0
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies:
l Two Transistor Forward
l Haft Bridge
l Full Bridge
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1
7/7/99
IRF840A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
500 ––– –––
––– 0.58 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.85
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Ω
VGS = 10V, ID = 4.8A
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
Gate Threshold Voltage
2.0
––– 4.0
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 4.8A
ID = 8.0A
gfs
3.7 ––– –––
S
Qg
––– ––– 38
––– ––– 9.0
––– ––– 18
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
11 –––
23 –––
26 –––
19 –––
VDD = 250V
ID = 8.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
RD = 31Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1018 –––
––– 155 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
8.0 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
––– 1490 –––
–––
–––
42 –––
56 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
510
8.0
Units
mJ
EAS
IAR
–––
–––
–––
A
EAR
Repetitive Avalanche Energy
13
mJ
Thermal Resistance
Parameter
Typ.
–––
Max.
1.0
Units
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
62
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
8.0
32
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 2.0
––– 422 633
––– 2.0 3.0
V
TJ = 25°C, IS = 8.0A, VGS = 0V
ns
TJ = 25°C, IF = 8.0A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF840A
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 25 C
J
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
8.0
A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0 8.0
9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF840A
20
16
12
8
100000
10000
1000
100
8.0
= A
I
D
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
C
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
Crss
10
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
1
0
0
10
20
30
40
10
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.1
0.2
10
100
1000
10000
0.5
0.8
1.1
1.4
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF840A
RD
8.0
6.0
4.0
2.0
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
0.01
t
1
t
2
0.02
0.01
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF840A
1200
1000
800
600
400
200
0
1 5V
I
D
TOP
3.6A
5.1A
BOTTOM 8.0A
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. DrainCurrent
Q
G
10 V
600
580
560
540
520
Q
Q
GD
GS
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
.0
I
, Avalanche Current ( A)
V
GS
AV
3.0
0.0
1.0
2.0
4.0
5.0
6.0
7.0
8.0
3mA
I
, Avalanche Current ( A)
AV
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
6
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IRF840A
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
Low Stray Inductance
D.U.T
•
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14.ForN-ChannelHEXFETS
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7
IRF840A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1
2
3
4
-
-
-
-
GATE
1
2
3
DRAIN
SOURCE
DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING
&
TOLERANCING PER ANSI Y14.5M, 1982.
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
CONTROLLING DIMENSION : INCH
&
Part Marking Information
TO-220AB
E XA M PL E : TH IS IS AN IRF 10 10
W ITH A SSE M BL Y
A
INTE RN AT IO N AL
R EC TIF IER
LO G O
PAR T N U M BER
L O T C O D E 9 B1M
IR F 1010
924 6
9B
1M
D ATE C O DE
(YYW W )
A SSEM BL Y
LO T
CO D E
YY
=
YE AR
= W E EK
W W
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 16 mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 8.0A. (See Figure 12)
ISD ≤ 8.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 150°C
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Data and specifications subject to change without notice. 7/99
8
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相关型号：
IRF840AF
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOTOROLA
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