5SHX03D6004 [ABB]
Reverse Conducting Integrated Gate-Commutated Thyristor; 反向开展集成门极换流晶闸管
| 型号： | 5SHX03D6004 |
| 厂家： | 
THE ABB GROUP |
| 描述： | Reverse Conducting Integrated Gate-Commutated Thyristor |
| 文件： | 总9页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDRM
ITGQM
ITSM
=
=
=
=
=
=
5500 V
280 A
1.8 kA
1.95 V
mΩ
3300 V
Reverse Conducting Integrated
Gate-Commutated Thyristor
VT0
5SHX 03D6004
rT
VDClink
7.2
Doc. No. 5SYA1225-03 Jan. 02
• Direct fiber optic control
• Fast response (tdon < 3 µs, tdoff < 6 µs)
• Precise timing (∆tdoff < 800 ns)
• Patented free floating silicon technology
• Optimized low On-state and switching losses
• Very high EMI immunity
• Cosmic radiation withstand rating
Blocking
VDRM
IDRM
Repetitive peak off-state voltage
Repetitive peak off-state current
5500 V
20 mA VD = VDRM
VGR ≥ 2V
≤
VGR ≥ 2V
Permanent DC voltage for 100
0 ≤ Tj ≤ 115 °C. Ambient cosmic
VDClink
3300 V
FIT failure rate
radiation at sea level in open air.
Mechanical data (see Fig. 9)
min.
max.
10 kN
14 kN
Fm
Mounting force
Dp
H
m
Ds
Da
l
Pole-piece diameter
Housing thickness
Weight IGCT
Surface creepage distance
Air strike distance
Length IGCT
34 mm
26 mm
0.55 kg
33 mm
13 mm
202.5 mm
46.5 mm
200 mm
±0.1 mm
±0.5 mm
≥
≥
+0/-0.5 mm
±1.0 mm
+0/-0.5 mm
h
w
Height IGCT
Width IGCT
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHX 03D6004
GCT Data
On-state (see Fig. 1)
ITAVM
ITRMS
Max. average on-state current
110 A
170 A
1.8 kA
Half sine wave, TC = 85 °C
Max. RMS on-state current
tp
tp
=
=
10 ms Tj = 115 °C
Max. peak non-repetitive
surge current
ITSM
After surge:
VD = VR = 0V
3.6 kA
1 ms
16.9x103 A2s
6.6x103 A2s
3.95 V
tp
tp
IT
=
=
=
10 ms
1 ms
280 A
I2t
Limiting load integral
VT
VT0
rT
On-state voltage
Threshold voltage
Slope resistance
≤
1.95 V
Tj = 115 °C
IT
=
100 - 500 A
7.2
mΩ
Turn-on switching
f
IT
VD
IT
RS
CCL
=
500 Hz Tj
=
115 °C
Max. rate of rise of on-state
di/dtcrit
90 A/µs
current
=
=
=
=
=
280 A
VD = 3900 V
tdon
tr
Turn-on delay time
Rise time
3 µs
1 µs
10 µs
3300 V
Tj
=
115 °C
75 A/µs
44.5 µH
1 µH
≤
≤
280 A di/dt =
ton (min) Min, on-time
5.2
Li
=
=
Ω
Eon
Turn-on energy per pulse
0.15 J
0.5 µF LCL
≤
Turn-off switching (see Fig. 2, 3)
VDM
VD
VD
Tj
ITGQ
CCL
VDRM
Tj
3300 V LCL
3300 V VDM
115 °C Rs
=
≤
≤
=
=
≤
115 °C
1 µH
VDRM
5.2
Ω
44.5 µH
1 µH
≤
=
=
=
=
=
ITGQM Max. controllable turn-off current
280 A
tdoff
tf
Turn-off delay time
Fall time
6 µs
1 µs
10 µs
1.5 J
≤
≤
toff (min) Min. off-time
Eoff Turn-off energy per pulse
ITGQM
0.5 µF LCL
Li
≤
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 2 of 9
5SHX 03D6004
Diode Data
On-state (see Fig. 4)
IFAVM
IFRMS
Max. average on-state current
65 A
100 A
1.9 kA
4.4 kA
Half sine wave, TC = 85 °C
Max. RMS on-state current
tp
tp
tp
tp
IF
=
=
=
=
=
10 ms Tj = 115 °C
1 ms After surge:
10 ms VF = VR = 0V
1 ms
Max. peak non-repetitive surge
current
IFSM
I2t
A2s
A2s
V
18.2×103
9.6×103
6.5
Limiting load integral
VF
VF0
rF
On-state voltage
Threshold voltage
Slope resistance
280 A
≤
3.52 V
Tj = 115 °C
IF
=
100 - 500 A
10.7
mΩ
Turn-off switching (see Fig. 5, 6)
IF
VCL
VCL
di/dt =
Rs
=
=
=
280 A
3900 V
3300 V
Tj =
IF
115 °C
Max. rate of rise of on-state
di/dtcrit
90 A/µs
current
Irr
Err
Reverse recovery current
Turn-off energy
170 A
0.8 J
=
280 A
115 °C
44.5 µH
≤
≤
75 A/µs Tj =
5.2 Li =
LCL
=
Ω
CCL
=
0.5 µF
=
1 µH
Gate Unit
Power supply (see Fig. 9 to 11)
Without galvanic isolation to power
circuit.
VGDC
Gate Unit voltage
V
20 0.5
DC
PGin
X1
Gate Unit power consumption
Gate Unit power connector
11 W
≤
fS = 500 Hz, ITGQ AV = 115 A, δ = 0.9
WAGO, Part Number 231-532/001-000 Note 1
Optical control input/output (see Fig. 9 to 11)
Pon CS Optical input power
Poff CS Optical noise power
tGLITCH Pulse width threshold
>
<
≤
-20 dBm
-45 dBm
450 ns
Valid for 1mm plastic optical fibre
(POF)
Max. pulse width without response
CS
Receiver for command signal
Agilent, Type HFBR-2528 Note 2
Note 1: WAGO, www.wago.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 3 of 9
5SHX 03D6004
Thermal
Tjop
Tstg
Tamb
Operating junction temperature range
Storage temperature range
Ambient operational temperature range
0…115 °C
-40…60 °C
0…60 °C
Thermal resistance junction to case
RthJC GCT
RthJC Diode
Diode not dissipating
GCT not dissipating
70 K/kW Double side cooled
90 K/kW
≤
≤
Thermal resistance case to heatsink
RthCH GCT
RthCH Diode
Diode not dissipating
GCT not dissipating
16 K/kW Double side cooled
16 K/kW
≤
≤
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 4 of 9
5SHX 03D6004
GCT Part
E
off [J]
1.5
IT [A]
Tj = 115 °C
600
Tj = 115°C
500
400
300
200
100
0
1.0
0.5
0.0
VD = 3300V
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0
VT [V]
0
100
200
300
ITGQ [A]
Fig. 1
GCT on-state characteristics.
Fig. 2
GCT turn-off energy per pulse vs.
turn-off current.
I
TGQ [A]
300
200
100
0
Tj = 0..115 °C
≤
≤
VDM
VRM
VDRM
VRRM
H
µ
Li = 44.5
CCL = 0.5
LCL = 1.0
µ
F
µ
H
Ω
Rs = 5.2
0
1000
2000
3000
4000
5000
VD [V]
Fig. 3
Max. repetitive GCT turn-off current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 5 of 9
5SHX 03D6004
Diode Part
IF [A]
Err [J]
600
0.9
Tj = 115°C
Tj = 115°C
diF/dt = 75 A/µs
VD = 3300 V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
500
400
300
200
100
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
F [V]
0
100
200
300
V
IFQ [A]
Fig. 4
Diode on-state characteristics.
Fig. 5
Diode turn-off energy per pulse vs.
turn-off current.
Irr [A]
IFQ [A]
250
300
200
100
Tj = 115°C
diF/dt = 75 A/µs
Tj = 0 - 115°C
diF/dt = 75 A/µs
VDM ≤ VDRM
VD = 3300 V
200
150
100
50
0
0
0
100
200
300
FQ [A]
0
1000
2000
3000
4000
5000
I
VD [V]
Fig. 6
Diode reverse recovery current vs.
turn-off current.
Fig. 7
Max. repetitive diode forward
current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 6 of 9
5SHX 03D6004
P
Gin [W]
20
fs = 1000 Hz
fs = 500 Hz
fs = 50 Hz
15
10
5
0
0
20
40
60
80
100
120
TGQ ave [A]
I
Fig. 8
Gate Unit power consumption.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 7 of 9
5SHX 03D6004
Fig. 9
Device Outline Drawing.
Gate Unit
RC-IGCT
RC-GCT
Supply (20VDC
)
X
Internal Supply (without galvanic isolation to power circuit)
1
Anode
Gate
Turn-
On
Circuit
Logic
Monitoring
Command Signal (Light)
Cathode
Rx
CS
Turn-
Off
Circuit
Fig. 10
Block diagram.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 8 of 9
5SHX 03D6004
1
Turn-on
Turn-off
di/dt
ITM
VDM
VDSP
VD
IT
VD
IT
0.9 VD
0.8 ITGQ
0.3 ITGQ
CS
CS
VG
tdon
0.05 VD
0.1 VD
VG
tf
tdoff
tr
Fig. 11
General current and voltage waveforms with IGCT-specific symbols.
Li
LCL
DUT
Rs
GCT - part
CCL
VLC
DUT
Diode - part
LLoad
Fig. 12
Test circuit.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Doc. No. 5SYA1225-03 Jan. 02
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abbsem.com
Email
Internet
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