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S-8211DAS-M5T1X [ABLIC]

BATTERY PROTECTION IC FOR 1-CELL PACK;
S-8211DAS-M5T1X
型号： S-8211DAS-M5T1X
厂家： ABLIC    ABLIC
描述：

BATTERY PROTECTION IC FOR 1-CELL PACK
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S-8211D Series  
BATTERY PROTECTION IC  
FOR 1-CELL PACK  
www.ablic.com  
© ABLIC Inc., 2005-2015  
Rev.6.5_03  
The S-8211D Series is a protection IC for 1-cell lithium-ion / lithium-polymer rechargeable battery and includes high-accuracy  
voltage detection circuits and delay circuits.  
The S-8211D Series is suitable for protecting 1-cell rechargeable lithium-ion / lithium-polymer battery packs from overcharge,  
overdischarge, and overcurrent.  
Features  
High-accuracy voltage detection circuit  
Overcharge detection voltage  
3.6 V to 4.5 V (5 mV step)  
Accuracy 25 mV (Ta = 25C)  
Accuracy 30 mV (Ta = 5C to 55C)  
Accuracy 50 mV  
Overcharge release voltage  
3.5 V to 4.4 V*1  
Overdischarge detection voltage  
Overdischarge release voltage  
Discharge overcurrent detection voltage  
Load short-circuiting detection voltage  
2.0 V to 3.0 V (10 mV step)  
2.0 V to 3.4 V*2  
0.05 V to 0.30 V (10 mV step) Accuracy 15 mV  
0.5 V (fixed) Accuracy 200 mV  
Accuracy 50 mV  
Accuracy 100 mV  
Detection delay times are generated only by an internal circuit (external capacitors are unnecessary).  
Accuracy 20%  
High-withstand voltage (VM pin and CO pin: Absolute maximum rating = 28 V)  
0 V battery charge function "available" / "unavailable" is selectable.  
Power-down function "available" / "unavailable" is selectable.  
Wide operation temperature range  
Low current consumption  
During operation  
Ta = 40C to 85C  
3.0 A typ., 5.5 A max. (Ta = 25C)  
0.2 A max. (Ta = 25C)  
During power-down  
Lead-free, Sn 100%, halogen-free*3  
*1. Overcharge release voltage = Overcharge detection voltage Overcharge hysteresis voltage  
(Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)  
*2. Overdischarge release voltage = Overdischarge detection voltage Overdischarge hysteresis voltage  
(Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)  
*3. Refer to "Product Name Structure" for details.  
Applications  
Lithium-ion rechargeable battery pack  
Lithium-polymer rechargeable battery pack  
Packages  
SOT-23-5  
SNT-6A  
1
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Block Diagram  
Output control circuit  
0 V battery charge /  
Oscillator control  
circuit  
Divider control  
charge inhibition circuit  
DO  
circuit  
VDD  
Charger detection circuit  
CO  
Overcharge  
detection  
comparator  
Discharge overcurrent detection  
comparator  
RVMD  
VM  
RVMS  
Overdischarge  
detection  
comparator  
Load short-circuiting detection  
comparator  
VSS  
Remark All diodes shown in figure are parasitic diodes.  
Figure 1  
2
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Product Name Structure  
1. Product name  
1. 1 SOT-23-5  
S-8211D xx - M5T1 x  
Environmental code  
U: Lead-free (Sn 100%), halogen-free  
S: Lead-free, halogen-free  
G: Lead-free (for details, please contact our sales office)  
Package name (abbreviation) and IC packing specifications*1  
M5T1: SOT-23-5, Tape  
Serial code*2  
Sequentially set from AA to ZZ  
*1. Refer to the tape drawing.  
*2. Refer to "3. Product name list".  
1. 2 SNT-6A  
S-8211D xx - I6T1 U  
Environmental code  
U: Lead-free (Sn 100%), halogen-free  
Package name (abbreviation) and IC packing specifications*1  
I6T1: SNT-6A, Tape  
Serial code*2  
Sequentially set from AA to ZZ  
*1. Refer to the tape drawing.  
*2. Refer to "3. Product name list".  
3
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
2. Packages  
Table 1 Package Drawing Codes  
Package Name  
SOT-23-5  
Dimension  
Tape  
Reel  
Land  
  
PG006-A-L-SD  
MP005-A-P-SD  
PG006-A-P-SD  
MP005-A-C-SD  
PG006-A-C-SD  
MP005-A-R-SD  
PG006-A-R-SD  
SNT-6A  
3. Product name list  
3. 1 SOT-23-5  
Table 2  
Discharge  
Over-  
charge  
Detection Release Detection Release  
Over-  
Over-  
Over-  
charge discharge discharge  
Overcurrent  
Detection  
Voltage  
0 V Battery  
Charge  
Function  
Delay Time Power-down  
Product Name  
Combination*1 Function  
Voltage  
[VCU  
Voltage  
[VCL]  
Voltage  
[VDL]  
Voltage  
[VDU  
]
]
[VDIOV  
]
S-8211DAD-M5T1x  
S-8211DAE-M5T1x  
S-8211DAH-M5T1x  
S-8211DAI-M5T1x  
S-8211DAJ-M5T1x  
S-8211DAK-M5T1x  
S-8211DAL-M5T1x  
S-8211DAM-M5T1x  
S-8211DAR-M5T1x  
S-8211DAS-M5T1x  
S-8211DAU-M5T1y  
S-8211DAV-M5T1y  
S-8211DAW-M5T1y  
S-8211DBB-M5T1U  
S-8211DBD-M5T1U  
S-8211DBE-M5T1U  
S-8211DBF-M5T1U  
S-8211DBG-M5T1U  
4.280 V  
4.280 V  
4.275 V  
4.325 V  
4.280 V  
4.280 V  
4.280 V  
4.275 V  
3.600 V  
3.600 V  
3.650 V  
3.700 V  
3.800 V  
4.350 V  
4.350 V  
4.350 V  
4.230 V  
4.250 V  
4.180 V  
4.180 V  
4.175 V  
4.075 V  
4.080 V  
4.080 V  
4.080 V  
4.075 V  
3.600 V  
3.500 V  
3.550 V  
3.600 V  
3.700 V  
4.150 V  
4.150 V  
4.150 V  
4.080 V  
4.050 V  
2.50 V  
2.50 V  
2.30 V  
2.50 V  
3.00 V  
2.30 V  
2.80 V  
2.50 V  
2.00 V  
2.50 V  
2.50 V  
2.50 V  
2.50 V  
2.10 V  
2.10 V  
2.10 V  
3.00 V  
2.70 V  
2.80 V  
2.70 V  
2.40 V  
2.90 V  
3.00 V  
2.30 V  
2.80 V  
2.90 V  
2.30 V  
2.80 V  
2.80 V  
2.80 V  
2.80 V  
2.20 V  
2.20 V  
2.20 V  
3.10 V  
3.00 V  
0.19 V  
0.19 V  
0.10 V  
0.15 V  
0.08 V  
0.13 V  
0.10 V  
0.15 V  
0.15 V  
0.10 V  
0.15 V  
0.05 V  
0.10 V  
0.26 V  
0.11 V  
0.14 V  
0.15 V  
0.20 V  
Unavailable  
Unavailable  
Available  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
(1)  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Unavailable  
Available  
Unavailable  
Available  
Unavailable  
Available  
Available  
Available  
Available  
Available  
Unavailable  
Unavailable  
Unavailable  
Unavailable  
Unavailable  
*1. Refer to Table 4 about the details of the delay time combinations (1).  
Remark1. Please contact our sales office for the products with detection voltage value other than those specified above.  
2. x: G or U  
y: S or U  
3. Please select products of environmental code = U for Sn 100%, halogen-free products.  
4
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
3. 2 SNT-6A  
Table 3  
Discharge  
Over-  
Over-  
Over-  
Over-  
Overcurrent  
Detection  
Voltage  
charge  
charge discharge discharge  
0 V Battery  
Charge  
Function  
Delay Time Power-down  
Combination*1 Function  
Product Name  
Detection Release Detection Release  
Voltage  
[VCU  
Voltage  
[VCL]  
Voltage  
[VDL]  
Voltage  
[VDU  
]
]
[VDIOV  
]
S-8211DAD-I6T1U  
S-8211DAE-I6T1U  
S-8211DAF-I6T1U  
S-8211DAG-I6T1U  
S-8211DAI-I6T1U  
S-8211DAN-I6T1U  
S-8211DAQ-I6T1U  
S-8211DAT-I6T1U  
S-8211DAX-I6T1U  
S-8211DAY-I6T1U  
S-8211DAZ-I6T1U  
S-8211DBA-I6T1U  
S-8211DBC-I6T1U  
4.280 V  
4.280 V  
4.250 V  
4.280 V  
4.325 V  
4.280 V  
4.280 V  
4.280 V  
4.280 V  
3.900 V  
3.800 V  
4.180 V  
4.180 V  
4.050 V  
4.080 V  
4.075 V  
4.080 V  
4.080 V  
4.080 V  
4.080 V  
3.900 V  
3.500 V  
2.50 V  
2.50 V  
2.40 V  
2.30 V  
2.50 V  
2.30 V  
2.30 V  
2.70 V  
2.00 V  
2.00 V  
2.40 V  
2.80 V  
2.70 V  
2.90 V  
2.30 V  
2.90 V  
3.00 V  
2.30 V  
2.70 V  
2.00 V  
2.30 V  
2.70 V  
0.19 V  
0.19 V  
0.10 V  
0.08 V  
0.15 V  
0.10 V  
0.10 V  
0.08 V  
0.11 V  
0.15 V  
0.07 V  
Unavailable  
Unavailable  
Available  
(1)  
(1)  
(2)  
(1)  
(1)  
(3)  
(3)  
(3)  
(3)  
(1)  
(1)  
(1)  
(1)  
Available  
Available  
Unavailable  
Unavailable  
Available  
Unavailable  
Unavailable  
Unavailable  
Unavailable  
Unavailable  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
Available  
4.000 V  
4.250 V  
3.900 V  
4.150 V  
2.35 V  
3.00 V  
2.65 V  
3.10 V  
0.10 V  
0.20 V  
Unavailable  
*1. Refer to Table 4 about the details of the delay time combinations (1) to (3).  
Remark Please contact our sales office for the products with detection voltage value other than those specified above.  
Table 4  
Overcharge Detection Overdischarge Detection  
Discharge Overcurrent  
Detection Delay Time  
Load Short-circuiting  
Detection Delay Time  
Delay Time  
Combination  
Delay Time  
[tCU  
Delay Time  
[tDL]  
]
[tDIOV  
]
[tSHORT]  
(1)  
(2)  
(3)  
1.2 s  
1.2 s  
1.2 s  
150 ms  
75 ms  
9 ms  
9 ms  
300 s  
300 s  
300 s  
150 ms  
18 ms  
Remark The delay times can be changed within the range listed Table 5. For details, please contact our sales office.  
Table 5  
Delay Time  
Symbol  
tCU  
Selection Range  
573 ms  
Remark  
Overcharge detection delay time  
Overdischarge detection delay time  
143 ms  
38 ms  
4.5 ms  
1.2 s*1  
Select a value from the left.  
Select a value from the left.  
Select a value from the left.  
Select a value from the left.  
tDL  
150 ms*1  
9 ms*1  
300 s*1  
300 ms  
18 ms  
Discharge overcurrent detection delay time tDIOV  
Load short-circuiting detection delay time  
tSHORT  
560 s  
*1. The value is the delay time of the standard products.  
5
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Pin Configurations  
1. SOT-23-5  
Table 6  
Pin No.  
1
Symbol  
VM  
Description  
Top view  
Voltage detection pin between VM pin and VSS pin  
(Overcurrent / charger detection pin)  
Input pin for positive power supply  
Input pin for negative power supply  
Connection pin of discharge control FET gate  
(CMOS output)  
5
4
2
3
VDD  
VSS  
4
5
DO  
CO  
1
2
3
Connection pin of charge control FET gate  
(CMOS output)  
Figure 2  
2. SNT-6A  
Table 7  
Pin No.  
1
Symbol  
NC*1  
Description  
Top view  
No connection  
1
2
3
6
5
4
Connection pin of charge control FET gate  
(CMOS output)  
2
3
CO  
DO  
Connection pin of discharge control FET gate  
(CMOS output)  
4
5
VSS  
VDD  
Input pin for negative power supply  
Input pin for positive power supply  
Voltage detection pin between VM pin and VSS pin  
(Overcurrent / charger detection pin)  
Figure 3  
6
VM  
*1. The NC pin is electrically open.  
The NC pin can be connected to the VDD pin or the VSS pin.  
6
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Absolute Maximum Ratings  
Table 8  
(Ta = 25C unless otherwise specified)  
Item  
Symbol  
VDS  
Applied Pin  
VDD  
Absolute Maximum Rating  
Unit  
Input voltage between VDD pin and  
VSS pin  
VSS 0.3 to VSS 12  
V
VM pin input voltage  
VVM  
VDO  
VCO  
VM  
DO  
CO  
VDD 28 to VDD 0.3  
VSS 0.3 to VDD 0.3  
VVM 0.3 to VDD 0.3  
250 (When not mounted on board)  
600*1  
V
V
DO pin output voltage  
CO pin output voltage  
V
mW  
mW  
mW  
C  
SOT-23-5  
Power dissipation  
PD  
SNT-6A  
Operation ambient temperature  
Storage temperature  
400*1  
Topr  
Tstg  
40 to 85  
55 to 125  
C  
*1. When mounted on board  
[Mounted board]  
(1) Board size: 114.3 mm 76.2 mm t1.6 mm  
(2) Board name: JEDEC STANDARD51-7  
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical  
damage. These values must therefore not be exceeded under any conditions.  
700  
600  
SOT-23-5  
500  
SNT-6A  
400  
300  
200  
100  
0
100  
150  
50  
0
Ambient Temperature (Ta) [C]  
Figure 4 Power Dissipation of Package (When Mounted on Board)  
7
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Electrical Characteristics  
1. Except detection delay time (Ta = 25C)  
Table 9  
(Ta = 25C unless otherwise specified)  
Test  
Test  
Circuit  
Item  
Symbol  
Condition  
Min. Typ. Max. Unit Condi-  
tion  
DETECTION VOLTAGE  
VCU  
0.025  
VCU  
0.03  
VCU  
0.025  
VCU  
0.03  
3.60 V to 4.50 V, adjustable  
VCU  
VCU  
VCL  
V
V
V
V
V
V
V
V
1
1
1
1
2
2
2
3
1
1
1
1
2
2
2
2
Overcharge detection voltage  
VCU  
3.60 V to 4.50 V, adjustable,  
Ta = 5C to 55C*1  
VCL  
VCL   
0.05  
VCL VCU  
0.05  
3.50 V to 4.40 V,  
Overcharge release voltage  
Overdischarge detection voltage  
Overdischarge release voltage  
VCL  
VDL  
VDU  
adjustable  
VCL = VCU  
VCL  
VCL   
0.025  
VCL  
0.05  
VDL  
VDL  
2.00 V to 3.00 V, adjustable  
VDL  
0.05  
0.05  
VDU  
VDU   
0.10  
VDU VDL  
VDU  
VDU  
VDIOV  
0.10  
2.00 V to 3.40 V,  
Adjustable  
VDU = VDL  
VDU  
0.05  
VDIOV  
VDU  
0.05  
VDIOV  
Discharge overcurrent detection voltage VDIOV  
Load short-circuiting detection voltage*2 VSHORT  
0.05 V to 0.30 V, adjustable  
0.015  
0.015  
0.30 0.50 0.70  
V
V
3
4
2
2
Charger detection voltage  
VCHA  
1.0 0.7 0.4  
0 V BATTERY CHARGE FUNCTION  
0 V battery charge starting charger voltage V0CHA  
0 V battery charge inhibition battery voltage V0INH  
INTERNAL RESISTANCE  
0 V battery charge function "available"  
0 V battery charge function "unavailable"  
1.2  
0.5  
V
V
10  
11  
2
2
Resistance between VM pin and VDD pin  
Resistance between VM pin and VSS pin  
INPUT VOLTAGE  
RVMD  
RVMS  
VDD = 1.8 V, VVM = 0 V  
VDD = 3.5 V, VVM = 1.0 V  
100  
10  
300  
20  
900 k  
5
5
3
3
40  
k  
Operation voltage between VDD pin and VSS pin VDSOP1  
Operation voltage between VDD pin and VM pin  
1.5  
1.5  
8
V
V
VDSOP2  
INPUT CURRENT (WITH POWER-DOWN FUNTION)  
Current consumption during operation IOPE VDD = 3.5 V, VVM = 0 V  
Current consumption during power-down IPDN VDD = VVM = 1.5 V  
INPUT CURRENT (WITHOUT POWER-DOWN FUNTION)  
28  
1.0  
3.0  
5.5 A  
0.2 A  
4
4
2
2
Current consumption during operation IOPE  
Current consumption during overdischarge IOPED  
OUTPUT RESISTANCE  
VDD = 3.5 V, VVM = 0 V  
VDD = VVM = 1.5 V  
1.0  
0.3  
3.0  
2.0  
5.5 A  
3.5 A  
4
4
2
2
CO pin resistance "H"  
CO pin resistance "L"  
DO pin resistance "H"  
DO pin resistance "L"  
RCOH  
RCOL  
RDOH  
RDOL  
VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V 2.5  
VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V 2.5  
VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 2.5  
5
5
5
5
10  
10  
10  
10  
k  
k  
k  
k  
6
6
7
7
4
4
4
4
VDO = 0.5 V, VDD = VVM = 1.8 V  
2.5  
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed  
by design, not tested in production.  
*2. In any conditions, load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage  
(VDIOV).  
8
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
2. Except detection delay time (Ta = 40°C to 85°C*1)  
Table 10  
(Ta = 40°C to 85°C*1 unless otherwise specified)  
Test  
Test  
Circuit  
Item  
Symbol  
Condition  
Min. Typ. Max. Unit Condi-  
tion  
DETECTION VOLTAGE  
VCU  
0.060  
VCL  
0.08  
VCU  
0.040  
VCL  
0.065  
VCL  
0.04  
Overcharge detection voltage  
VCU  
3.60 V to 4.50 V, adjustable  
VCU  
VCL  
VCL  
V
V
V
1
1
1
1
1
1
VCL VCU  
3.50 V to 4.40 V,  
Overcharge release voltage  
Overdischarge detection voltage  
Overdischarge release voltage  
VCL  
adjustable  
VCL = VCU  
VCL  
0.08  
VDL  
VDL   
0.13  
VDL  
2.00 V to 3.00 V, adjustable  
VDL  
V
2
2
0.11  
VDU  
VDU   
0.19  
VDU VDL  
VDU  
VDU  
V
V
V
2
2
3
2
2
2
0.15  
2.00 V to 3.40 V,  
VDU  
adjustable  
VDU = VDL  
VDU  
0.11  
VDIOV  
VDU  
0.13  
VDIOV  
Discharge overcurrent detection  
voltage  
Load short-circuiting detection voltage*2  
VDIOV  
0.05 V to 0.30 V, adjustable  
VDIOV  
0.021  
0.024  
VSHORT  
VCHA  
0.16 0.50 0.84  
V
V
3
4
2
2
Charger detection voltage  
1.2 0.7 0.2  
0 V BATTERY CHARGE FUNCTION  
0 V battery charge starting charger voltage  
V0CHA  
0 V battery charge function "available"  
0 V battery charge function "unavailable"  
1.7  
0.3  
V
V
10  
11  
2
2
0 V battery charge inhibition battery voltage V0INH  
INTERNAL RESISTANCE  
Resistance between VM pin and VDD pin RVMD  
Resistance between VM pin and VSS pin RVMS  
INPUT VOLTAGE  
VDD = 1.8 V, VVM = 0 V  
VDD = 3.5 V, VVM = 1.0 V  
78  
300 1310 k  
5
5
3
3
7.2  
20  
44  
k  
Operation voltage between VDD pin and VSS pin VDSOP1  
Operation voltage between VDD pin and VM pin VDSOP2  
1.5  
1.5  
8
V
V
28  
INPUT CURRENT (WITH POWER-DOWN FUNTION)  
Current consumption during operation IOPE  
Current consumption during power-down IPDN  
VDD = 3.5 V, VVM = 0 V  
VDD = VVM = 1.5 V  
0.7  
3.0  
6.0 A  
0.3 A  
4
4
2
2
INPUT CURRENT (WITHOUT POWER-DOWN FUNTION)  
Current consumption during operation IOPE VDD = 3.5 V, VVM = 0 V  
VDD = VVM = 1.5 V  
0.7  
0.2  
3.0  
2.0  
6.0 A  
3.8 A  
4
4
2
2
Current consumption during overdischarge  
OUTPUT RESISTANCE  
CO pin resistance "H"  
IOPED  
RCOH  
RCOL  
RDOH  
RDOL  
VCO = 3.0 V, VDD = 3.5 V, VVM = 0 V 1.2  
VCO = 0.5 V, VDD = 4.5 V, VVM = 0 V 1.2  
VDO = 3.0 V, VDD = 3.5 V, VVM = 0 V 1.2  
5
5
5
5
15  
15  
15  
15  
k  
k  
k  
k  
6
6
7
7
4
4
4
4
CO pin resistance "L"  
DO pin resistance "H"  
DO pin resistance "L"  
VDO = 0.5 V, VDD = VVM = 1.8 V  
1.2  
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed  
by design, not tested in production.  
*2. In any conditions, load short-circuiting detection voltage (VSHORT) is higher than discharge overcurrent detection voltage  
(VDIOV).  
9
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
3. Detection delay time  
3. 1 S-8211DAD, S-8211DAE, S-8211DAG, S-8211DAH, S-8211DAI, S-8211DAJ, S-8211DAK, S-8211DAL,  
S-8211DAM, S-8211DAR, S-8211DAS, S-8211DAU, S-8211DAV, S-8211DAW, S-8211DAY, S-8211DAZ,  
S-8211DBA, S-8211DBB, S-8211DBC, S-8211DBD, S-8211DBE, S-8211DBF, S-8211DBG  
Table 11  
Test  
Condi-  
tion  
Test  
Circuit  
Item  
Symbol  
Condition  
Min. Typ. Max. Unit  
DELAY TIME (Ta = 25°C)  
tCU  
0.96  
120  
7.2  
1.2  
150  
9
1.4  
180 ms  
11 ms  
360 s  
s
8
8
9
9
5
5
5
5
Overcharge detection delay time  
tDL  
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
DELAY TIME (Ta = 40°C to 85°C)*1  
Overcharge detection delay time  
tDIOV  
tSHORT  
240  
300  
tCU  
0.7  
83  
1.2  
2.0  
255 ms  
ms  
540 s  
s
8
8
9
9
5
5
5
5
tDL  
150  
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
tDIOV  
tSHORT  
5
9
15  
150  
300  
*1. Since products are not screened at high and low temperature, the specification for this temperature range is  
guaranteed by design, not tested in production.  
3. 2 S-8211DAF  
Table 12  
Test  
Test  
Condi-  
tion  
Item  
Symbol  
Condition  
Min. Typ. Max. Unit  
Circuit  
DELAY TIME (Ta = 25°C)  
s
8
8
9
9
5
5
5
5
Overcharge detection delay time  
tCU  
0.96  
61  
1.2  
75  
9
1.4  
90  
tDL  
ms  
ms  
s  
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
DELAY TIME (Ta = 40°C to 85°C)*1  
Overcharge detection delay time  
tDIOV  
tSHORT  
7.2  
240  
11  
300  
360  
s
8
8
9
9
5
5
5
5
tCU  
0.7  
41  
5
1.2  
75  
9
2.0  
128  
15  
tDL  
ms  
ms  
s  
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
tDIOV  
tSHORT  
150  
300  
540  
*1. Since products are not screened at high and low temperature, the specification for this temperature range is  
guaranteed by design, not tested in production.  
10  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
3. 3 S-8211DAN, S-8211DAQ, S-8211DAT, S-8211DAX  
Table 13  
Condition  
Test  
Min. Typ. Max. Unit Condi-  
tion  
Test  
Item  
Symbol  
Circuit  
DELAY TIME (Ta = 25°C)  
tCU  
0.96  
120  
14.5  
240  
1.2  
150  
18  
1.4  
180 ms  
22 ms  
360 s  
s
8
8
9
9
5
5
5
5
Overcharge detection delay time  
tDL  
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
DELAY TIME (Ta = 40°C to 85°C)*1  
Overcharge detection delay time  
tDIOV  
tSHORT  
300  
tCU  
0.7  
83  
1.2  
2.0  
255 ms  
ms  
540 s  
s
8
8
9
9
5
5
5
5
tDL  
150  
Overdischarge detection delay time  
Discharge overcurrent detection delay time  
Load short-circuiting detection delay time  
tDIOV  
tSHORT  
10  
18  
30  
150  
300  
*1. Since products are not screened at high and low temperature, the specification for this temperature range is  
guaranteed by design, not tested in production.  
11  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Test Circuits  
Caution Unless otherwise specified, the output voltage levels "H" and "L" at the CO pin (VCO) and the DO pin  
(VDO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with  
respect to VVM and the DO pin level with respect to VSS  
.
1. Overcharge detection voltage, overcharge release voltage  
(Test condition 1, test circuit 1)  
Overcharge detection voltage (VCU) is defined as the voltage between the VDD pin and the VSS pin at which VCO goes  
from "H" to "L" when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V. Overcharge  
release voltage (VCL) is defined as the voltage between the VDD pin and the VSS pin at which VCO goes from "L" to  
"H" when the voltage V1 is then gradually decreased. Overcharge hysteresis voltage (VHC) is defined as the difference  
between overcharge detection voltage (VCU) and overcharge release voltage (VCL).  
2. Overdischarge detection voltage, overdischarge release voltage  
(Test condition 2, test circuit 2)  
Overdischarge detection voltage (VDL) is defined as the voltage between the VDD pin and the VSS pin at which VDO  
goes from "H" to "L" when the voltage V1 is gradually decreased from the starting condition of V1 = 3.5 V, V2 = 0 V.  
Overdischarge release voltage (VDU) is defined as the voltage between the VDD pin and the VSS pin at which VDO  
goes from "L" to "H" when the voltage V1 is then gradually increased. Overdischarge hysteresis voltage (VHD) is  
defined as the difference between overdischarge release voltage (VDU) and overdischarge detection voltage (VDL).  
3. Discharge overcurrent detection voltage  
(Test condition 3, test circuit 2)  
Discharge overcurrent detection voltage (VDIOV) is defined as the voltage between the VM pin and the VSS pin whose  
delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of discharge  
overcurrent delay time when the voltage V2 is increased rapidly (within 10 s) from the starting condition of V1 = 3.5 V,  
V2 = 0 V.  
4. Load short-circuiting detection voltage  
(Test condition 3, test circuit 2)  
Load short-circuiting detection voltage (VSHORT) is defined as the voltage between the VM pin and the VSS pin whose  
delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of load short-circuiting  
delay time when the voltage V2 is increased rapidly (within 10 s) from the starting condition of V1 = 3.5 V, V2 = 0 V.  
5. Current consumption during operation  
(Test condition 4, test circuit 2)  
The current consumption during operation (IOPE) is the current that flows through the VDD pin (IDD) under the set  
conditions of V1 = 3.5 V and V2 = 0 V (normal status).  
6. Charger detection voltage (= abnormal charge current detection voltage)  
(Test condition 4, test circuit 2)  
The charger detection voltage (VCHA) is the voltage between the VM pin and the VSS pin; when gradually increasing  
V1 at V1 = 1.8 V, V2 = 0 V to set V1 = VDL (VHD/2), after that, decreasing V2 gradually from 0 V so that VDO goes "L"  
to "H".  
Measurement of the charger detection voltage is available for the product with overdischarge hysteresis VHD 0 only.  
The abnormal charge current detection voltage is the voltage between the VM pin and the VSS pin; when gradually  
decreasing V2 at V1 = 3.5 V, V2 = 0 V and VCO goes "H" to "L".  
The value of the abnormal charge current detection voltage is equal to the charger detection voltage (VCHA).  
12  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
7. Current consumption during power-down, current consumption during overdischarge  
(Test condition 4, test circuit 2)  
7. 1 With power-down function  
The current consumption during power-down (IPDN) is the current that flows through the VDD pin (IDD) under the set  
conditions of V1 = V2 = 1.5 V (overdischarge status).  
7. 2 Without power-down function  
The current consumption during overdischarge (IOPED) is the current that flows through the VDD pin (IDD) under the set  
conditions of V1 = V2 = 1.5 V (overdischarge status).  
8. Resistance between VM pin and VDD pin  
(Test condition 5, test circuit 3)  
The resistance between the VM pin and the VDD pin (RVMD) is the resistance between the VM pin and the VDD pin  
under the set conditions of V1 = 1.8 V, V2 = 0 V.  
9. Resistance between VM pin and VSS pin  
(Test condition 5, test circuit 3)  
The resistance between the VM pin and the VSS pin (RVMS) is the resistance between the VM pin and the VSS pin  
under the set conditions of V1 = 3.5 V, V2 = 1.0 V.  
10. CO pin resistance "H"  
(Test condition 6, test circuit 4)  
The CO pin resistance "H" (RCOH) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V3 = 3.0 V.  
11. CO pin resistance "L"  
(Test condition 6, test circuit 4)  
The CO pin resistance "L" (RCOL) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 = 0 V, V3 = 0.5 V.  
12. DO pin resistance "H"  
(Test condition 7, test circuit 4)  
The DO pin resistance "H" (RDOH) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 = 0 V, V4 = 3.0 V.  
13. DO pin resistance "L"  
(Test condition 7, test circuit 4)  
The DO pin resistance "L" (RDOL) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 = 0 V, V4 = 0.5 V.  
14. Overcharge detection delay time  
(Test condition 8, test circuit 5)  
The overcharge detection delay time (tCU) is the time needed for VCO to change from "H" to "L" just after the voltage V1  
momentarily increases (within 10 s) from overcharge detection voltage (VCU) 0.2 V to overcharge detection voltage  
(VCU) 0.2 V under the set conditions of V2 = 0 V.  
15. Overdischarge detection delay tme  
(Test condition 8, test circuit 5)  
The overdischarge detection delay time (tDL) is the time needed for VDO to change from "H" to "L" just after the voltage  
V1 momentarily decreases (within 10 s) from overdischarge detection voltage (VDL) 0.2 V to overdischarge  
detection voltage (VDL) 0.2 V under the set condition of V2 = 0 V.  
13  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
16. Discharge overcurrent detection delay time  
(Test condition 9, test circuit 5)  
Discharge overcurrent detection delay time (tDIOV) is the time needed for VDO to go to "L" after the voltage V2  
momentarily increases (within 10 s) from 0 V to 0.35 V under the set conditions of V1 = 3.5 V, V2 = 0 V.  
17. Load short-circuiting detection delay time  
(Test condition 9, test circuit 5)  
Load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go to "L" after the voltage V2  
momentarily increases (within 10 s) from 0 V to 1.6 V under the set conditions of V1 = 3.5 V, V2 = 0 V.  
18. 0 V battery charge starting charger voltage (0 V battery charge function "available")  
(Test condition 10, test circuit 2)  
The 0 V battery charge starting charger voltage (V0CHA) is defined as the voltage between the VDD pin and the VM  
pin at which VCO goes to "H" (VVM 0.1 V or higher) when the voltage V2 is gradually decreased from the starting  
condition of V1 = V2 = 0 V.  
19. 0 V battery charge inhibition battery voltage (0 V battery charge function "unavailable")  
(Test condition 11, test circuit 2)  
The 0 V battery charge inhibition battery voltage (V0INH) is defined as the voltage between the VDD pin and the VSS  
pin at which VCO goes to "H" (VVM 0.1 V or higher) when the voltage V1 is gradually increased from the starting  
condition of V1 = 0 V, V2 = 4 V.  
14  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
R1 =  
IDD  
220  
VDD  
VSS  
VDD  
VSS  
A
V1  
V1  
S-8211D Series  
S-8211D Series  
VM  
VM  
DO  
CO  
DO  
CO  
V2  
V VDO  
V VCO  
V VDO  
V VCO  
COM  
COM  
Figure 5 Test Circuit 1  
Figure 6 Test Circuit 2  
IDD  
A
VDD  
VDD  
V1  
V1  
S-8211D Series  
S-8211D Series  
VSS  
VM  
VSS  
VM  
DO  
CO  
DO  
A
CO  
A
A IVM  
V2  
IDO  
V4  
ICO  
V3  
V2  
COM  
COM  
Figure 7 Test Circuit 3  
Figure 8 Test Circuit 4  
VDD  
V1  
S-8211D Series  
VSS  
VM  
DO  
CO  
Oscilloscope  
Oscilloscope  
V2  
COM  
Figure 9 Test Circuit 5  
15  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Operation  
Remark Refer to the "Battery Protection IC Connection Example".  
1. Normal status  
The S-8211D Series monitors the voltage of the battery connected between the VDD pin and the VSS pin and the  
voltage difference between the VM pin and the VSS pin to control charging and discharging. When the battery voltage  
is in the range from overdischarge detection voltage (VDL) to overcharge detection voltage (VCU), and the VM pin  
voltage is not more than the discharge overcurrent detection voltage (VDIOV), the S-8211D Series turns both the  
charging and discharging control FETs on. This condition is called the normal status, and in this condition charging  
and discharging can be carried out freely.  
The resistance (RVMD) between the VM pin and the VDD pin, and the resistance (RVMS) between the VM pin and the  
VSS pin are not connected in the normal status.  
Caution When the battery is connected for the first time, discharging may not be enabled. In this case, short  
the VM pin and the VSS pin, or set the VM pin’s voltage at the level of the charger detection voltage  
(VCHA) or more and the discharge overcurrent detection voltage (VDIOV) or less by connecting the  
charger. The S-8211D Series then returns to the normal status.  
2. Overcharge status  
When the battery voltage becomes higher than overcharge detection voltage (VCU) during charging in the normal  
status and detection continues for the overcharge detection delay time (tCU) or longer, the S-8211D Series turns the  
charging control FET off to stop charging. This condition is called the overcharge status.  
The resistance (RVMD) between the VM pin and the VDD pin, and the resistance (RVMS) between the VM pin and the  
VSS pin are not connected in the overcharge status.  
The overcharge status is released in the following two cases ( (1) and (2) ).  
(1) In the case that the VM pin voltage is higher than or equal to charger detection voltage (VCHA), and is lower than  
the discharge overcurrent detection voltage (VDIOV), the S-8211D Series releases the overcharge status when the  
battery voltage falls below the overcharge release voltage (VCL).  
(2) In the case that the VM pin voltage is higher than or equal to the discharge overcurrent detection voltage (VDIOV),  
the S-8211D Series releases the overcharge status when the battery voltage falls below the overcharge detection  
voltage (VCU).  
When the discharge is started by connecting a load after the overcharge detection, the VM pin voltage rises more  
than the voltage at the VSS pin due to the Vf voltage of the parasitic diode. This is because the discharge current  
flows through the parasitic diode in the charging control FET. If the VM pin voltage is higher than or equal to the  
discharge overcurrent detection voltage (VDIOV), the S-8211D Series releases the overcharge status when the  
battery voltage is lower than or equal to the overcharge detection voltage (VCU).  
Caution 1. If the battery is charged to a voltage higher than overcharge detection voltage (VCU) and the  
battery voltage does not fall below overcharge detection voltage (VCU) even when a heavy load is  
connected, discharge overcurrent detection and load short-circuiting detection do not function  
until the battery voltage falls below overcharge detection voltage (VCU). Since an actual battery  
has an internal impedance of tens of m, the battery voltage drops immediately after a heavy  
load that causes overcurrent is connected, and discharge overcurrent detection and load short-  
circuiting detection function.  
2. When a charger is connected after overcharge detection, the overcharge status is not released  
even if the battery voltage is below overcharge release voltage (VCL). The overcharge status is  
released when the VM pin voltage goes over charger detection voltage (VCHA) by removing the  
charger.  
16  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
3. Overdischarge status  
3. 1 With power-down function  
When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status and  
the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8211D Series turns the  
discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the  
overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and the VDD pin in the  
S-8211D Series (RVMD). When voltage difference between the VM pin and the VDD pin then is 1.3 V typ. or lower, the  
current consumption is reduced to the power-down current consumption (IPDN). This condition is called the power-down  
status.  
The resistance (RVMS) between the VM pin and the VSS pin is not connected in the power-down status and the  
overdischarge status.  
The power-down status is released when a charger is connected and the voltage difference between the VM pin and  
the VDD pin becomes 1.3 V typ. or higher.  
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower  
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status and turns the  
discharging FET on when the battery voltage reaches overdischarge detection voltage (VDL) or higher.  
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower  
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status when the battery voltage  
reaches overdischarge release voltage (VDU) or higher.  
3. 2 Without power-down function  
When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status and  
the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8211D Series turns the  
discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the  
overdischarge status, the VM pin voltage is pulled up by the resistor between the VM pin and the VDD pin in the  
S-8211D Series (RVMD).  
The resistance (RVMS) between the VM pin and the VSS pin is not connected in the overdischarge status.  
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower  
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status and turns the  
discharging FET on when the battery voltage reaches overdischarge detection voltage (VDL) or higher.  
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower  
than charger detection voltage (VCHA), the S-8211D Series releases the overdischarge status when the battery voltage  
reaches overdischarge release voltage (VDU) or higher.  
4. Discharge overcurrent status (discharge overcurrent, load short-circuiting)  
When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the  
discharge overcurrent detection voltage because the discharge current is higher than the specified value and the  
status lasts for the discharge overcurrent detection delay time, the discharge control FET is turned off and discharging  
is stopped. This status is called the discharge overcurrent status.  
In the discharge overcurrent status, the VM pin and the VSS pin are shorted by the resistor between the VM pin and  
the VSS pin (RVMS) in the S-8211D Series. However, the voltage of the VM pin is at the VDD potential due to the load  
as long as the load is connected. When the load is disconnected completely, the VM pin returns to the VSS potential.  
If the S-8211D Series detects that the voltage of the VM pin returns to discharge overcurrent detection voltage (VDIOV  
or lower, the discharge overcurrent status is restored to the normal status.  
)
The S-8211D Series will be restored to the normal status from discharge overcurrent detection status even when the  
voltage of the VM pin becomes the discharge overcurrent detection voltage (VDIOV) or lower by connecting the charger.  
The resistance (RVMD) between the VM pin and the VDD pin is not connected in the discharge overcurrent status.  
17  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
5. Abnormal charge current detection  
During charging a battery which is in the normal status, if the VM pin voltage becomes lower than the charger  
detection voltage (VCHA) and this status is held longer than the overcharge detection delay time (tCU), the S-8211D  
Series turns off the charge-control FET to stop charging. This is abnormal charge current detection.  
This function works in the case that the DO pin voltage is in "H", and the VM pin voltage becomes lower than the  
charger detection voltage (VCHA). Thus if the abnormal charge current flows in the battery in the overdischarge status,  
the S-8211D Series turns off the charge-control FET to stop charging; the DO pin voltage goes in "H" so that the  
battery voltage becomes higher than the overdischarge detection voltage (VDL), and after the overcharge detection  
delay time (tcu).  
The status of abnormal charge current detection is released by the lower potential difference between the VM pin and  
the VSS pin than the charger detection voltage (VCHA).  
6. 0 V battery charge function "available"  
This function is used to recharge a connected battery whose voltage is 0 V due to self-discharge. When the 0 V  
battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EBpin and EBpin by  
connecting a charger, the charging control FET gate is fixed to the VDD pin voltage.  
When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turn-  
on voltage due to the charger voltage, the charging control FET is turned on to start charging. At this time, the  
discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging  
control FET. When the battery voltage becomes equal to or higher than overdischarge release voltage (VDU), the  
S-8211D Series enters the normal status.  
Caution Some battery providers do not recommend charging for a completely self-discharged battery. Please  
ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function.  
7. 0 V battery charge function "unavailable"  
This function inhibits recharging when a battery that is internally short-circuited (0 V battery) is connected. When the  
battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charging control FET gate is  
fixed to the EBpin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery  
voltage (V0INH) or higher, charging can be performed.  
Caution Some battery providers do not recommend charging for a completely self-discharged battery. Please  
ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function.  
18  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
8. Delay circuit  
The detection delay times are determined by dividing a clock of approximately 3.5 kHz by the counter.  
Remark1. The discharge overcurrent detection delay time (tDIOV) and the load short-circuiting detection delay time  
(tSHORT) start when the discharge overcurrent detection voltage (VDIOV) is detected. When the load short-  
circuiting detection voltage (VSHORT) is detected over the load short-circuiting detection delay time (tSHORT  
after the detection of discharge overcurrent detection voltage (VDIOV), the S-8211D Series turns the  
discharging control FET off within tSHORT from the time of detecting VSHORT  
)
.
VDD  
DO pin  
tD  
0 tD tSHORT  
VSS  
Load short-circuiting detection delay time (tSHORT  
VDD  
)
Time  
VSHORT  
VM pin  
VDIOV  
VSS  
Time  
Figure 10  
2. With power-down function  
When any overcurrent is detected and the overcurrent continues for longer than the overdischarge  
detection delay time (tDL) without the load being released, the status changes to the power-down status at  
the point where the battery voltage falls below overdischarge detection voltage (VDL).  
When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the  
S-8211D Series turns the discharging control FET off via overcurrent detection. In this case, if the recovery  
of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is  
still lower than the overdischarge detection voltage (VDL), the S-8211D Series shifts to the power-down  
status.  
Without power-down function  
When any overcurrent is detected and the overcurrent continues for longer than the overdischarge  
detection delay time (tDL) without the load being released, the status changes to the overdischarge status  
at the point where the battery voltage falls below overdischarge detection voltage (VDL).  
When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the  
S-8211D Series turns the discharging control FET off via overcurrent detection. In this case, if the recovery  
of the battery voltage is so slow that the battery voltage after the overdischarge detection delay time (tDL) is  
still lower than the overdischarge detection voltage (VDL), the S-8211D Series shifts to the overdischarge  
status.  
19  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Timing Chart  
1. Overcharge detection, overdischarge detection  
VCU  
V
CL (VCU VHC)  
Battery voltage  
V
DU (VDL VHD  
)
VDL  
VDD  
DO pin voltage  
CO pin voltage  
VSS  
VDD  
VSS  
VEB  
VDD  
VM pin voltage  
VDIOV  
VSS  
VEB  
Charger connection  
Load connection  
Overcharge detection delay time (tCU)  
(1) (2)  
Overdischarge detection delay time (tDL)  
(1) (3)  
(1)  
Status*1  
*1. (1): Normal status  
(2): Overcharge status  
(3): Overdischarge status  
Remark The charger is assumed to charge with a constant current.  
Figure 11  
20  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
2. Discharge overcurrent detection  
VCU  
V
CL (VCU VHC  
)
Battery voltage  
V
DU (VDL VHD  
)
VDL  
VDD  
DO pin voltage  
VSS  
VDD  
CO pin voltage  
VM pin voltage  
VSS  
VDD  
VSHORT  
VDIOV  
VSS  
Load connection  
Discharge overcurrent  
detection delay time (tDIOV  
Load short-circuiting  
detection delay time (tSHORT  
)
)
(1)  
(2)  
(1) (2)  
(1)  
Status *1  
*1. (1): Normal status  
(2): Discharge overcurrent status  
Remark The charger is assumed to charge with a constant current.  
Figure 12  
21  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
3. Charger detection  
VCU  
VCL (VCU VHC  
Battery voltage  
)
V
DU (VDL VHD)  
VDL  
VDD  
DO pin voltage  
VSS  
VDD  
CO pin voltage  
VM pin voltage  
VSS  
VDD  
VSS  
VCHA  
Charger connection  
Load connection  
In case VM pin voltage < VCHA  
Overdischarge is released at the  
overdischarge detection voltage (VDL  
Overdischarge detection  
delay time (tDL  
)
)
(1)  
(2)  
(1)  
Status*1  
*1. (1): Normal status  
(2): Overdischarge status  
Remark The charger is assumed to charge with a constant current.  
Figure 13  
22  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
4. Abnormal charge current detection  
VCU  
VCL (VCU VHC  
)
Battery voltage  
VDU (VDL VHD  
)
VDL  
VDD  
DO pin voltage  
VSS  
VDD  
CO pin voltage  
VM pin voltage  
VSS  
VDD  
VSS  
VCHA  
Charger connection  
Load connection  
Overdischarge detection  
delay time (tDL  
Abnormal charge current detection delay time  
( = overcharge detection delay time (tCU))  
)
(3)  
(1)  
(1)  
(2)  
(1)  
Status*1  
*1. (1): Normal status  
(2): Overdischarge status  
(3): Overcharge status  
Remark The charger is assumed to charge with a constant current.  
Figure 14  
23  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Battery Protection IC Connection Example  
EB  
R1  
VDD  
Battery C1  
S-8211D Series  
VSS  
DO  
CO  
VM  
R2  
FET1  
FET2  
EB  
Figure 15  
Table 14 Constants for External Components  
Symbol  
FET1  
Part  
Purpose  
Min.  
Typ.  
Max.  
Remark  
Threshold voltage Overdischarge detection  
voltage*1  
Gate to source withstand voltage Charger  
voltage*2  
N-channel  
MOS FET  
Discharge control  
  
Threshold voltage Overdischarge detection  
voltage*1  
Gate to source withstand voltage Charger  
voltage*2  
N-channel  
MOS FET  
FET2  
Charge control  
Resistance should be as small as possible to  
avoid lowering the overcharge detection  
accuracy due to current consumption.*3  
Connect a capacitor of 0.022 F or higher  
between VDD pin and VSS pin.*4  
Select as large a resistance as possible to  
prevent current when a charger is connected  
in reverse.*5  
ESD protection,  
For power fluctuation  
R1  
C1  
R2  
Resistor  
Capacitor  
Resistor  
100   
0.022 F  
300   
220   
0.1 F  
2 k  
330   
1.0 F  
4 k  
For power fluctuation  
Protection for reverse  
connection of a charger  
*1. If the threshold voltage of a FET is low, the FET may not cut the charge current. If a FET with a threshold voltage equal to  
or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge is detected.  
*2. If the withstand voltage between the gate and source is lower than the charger voltage, the FET may be destroyed.  
*3. If a high resistor is connected to R1, the voltage between the VDD pin and the VSS pin may exceed the absolute  
maximum rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a  
resistor of 100 or higher as R1 for ESD protection.  
*4. If a capacitor of less than 0.022 F is connected to C1, the DO pin may oscillate when load short-circuiting is detected. Be  
sure to connect a capacitor of 0.022 F or higher to C1.  
*5. If a resistor of 4 kor higher is connected to R2, the charging current may not be cut when a high-voltage charger is  
connected.  
Caution  
1. The above constants may be changed without notice.  
2. It has not been confirmed whether the operation is normal or not in circuits other than the above  
example of connection. In addition, the example of connection shown above and the constant do not  
guarantee proper operation. Perform thorough evaluation using the actual application to set the  
constant.  
24  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Precautions  
The application conditions for the input voltage, output voltage, and load current should not exceed the package power  
dissipation.  
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic  
protection circuit.  
ABLIC Inc. claims no responsibility for any and all disputes arising out of or in connection with any infringement by  
products including this IC of patents owned by a third party.  
25  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Characteristics (Typical Data)  
1. Current consumption  
1. 1 IOPE vs. Ta  
1. 2 IPDN vs. Ta  
0.16  
6
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0
5
4
3
2
1
0
40 25  
0
25  
Ta [C]  
50  
7585  
4025  
0
25  
Ta [C]  
50  
7585  
1. 3 IOPE vs. VDD  
6
5
4
3
2
1
0
0
4
8
2
6
VDD [V]  
2. Overcharge detection / release voltage, overdischarge detection / release voltage, overcurrent  
detection voltage, and delay time  
2. 1 VCU vs. Ta  
2. 2 VCL vs. Ta  
4.350  
4.345  
4.340  
4.335  
4.330  
4.325  
4.320  
4.315  
4.125  
4.115  
4.105  
4.095  
4.085  
4.075  
4.065  
4.055  
4.045  
4.035  
4.025  
4.310  
4.305  
4.300  
4025  
0
25  
Ta [C]  
50  
7585  
0
4025  
25  
Ta [C]  
50  
7585  
2. 3 VDU vs. Ta  
2.95  
2. 4 VDL vs. Ta  
2.60  
2.58  
2.56  
2.54  
2.52  
2.50  
2.48  
2.46  
2.44  
2.42  
2.40  
2.94  
2.93  
2.92  
2.91  
2.90  
2.89  
2.88  
2.87  
2.86  
2.85  
40 25  
0
25  
50  
7585  
40 25  
0
25  
50  
7585  
Ta [C]  
Ta [C]  
26  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
2. 5 tCU vs. Ta  
2. 6 tDL vs. Ta  
1.50  
1.45  
1.40  
1.35  
200  
190  
180  
170  
1.30  
160  
1.25  
150  
1.20  
1.15  
1.10  
140  
130  
120  
1.05  
110  
1.00  
100  
40 25  
0
25  
50  
7585  
40 25  
0
25  
50  
7585  
Ta [C]  
Ta [C]  
2. 7 VDIOV vs. Ta  
2. 8 tDIOV vs. VDD  
14  
13  
12  
11  
10  
9
0.175  
0.170  
0.165  
0.160  
0.155  
0.150  
0.145  
0.140  
8
7
0.135  
0.130  
0.125  
6
5
4
4025  
0
25  
50  
7585  
7585  
4.5  
3.0  
3.5  
4.0  
4.5  
Ta [C]  
VDD [V]  
2. 9 tDIOV vs. Ta  
2. 10 VSHORT vs. Ta  
0.75  
0.70  
0.65  
0.60  
14  
13  
12  
11  
10  
9
0.55  
0.50  
8
0.45  
0.40  
0.35  
7
6
5
0.30  
4
0.25  
4025  
0
25  
Ta [C]  
50  
4025  
0
25  
50  
7585  
Ta [C]  
2. 11 tSHORT vs. VDD  
2. 12 tSHORT vs. Ta  
0.65  
0.63  
0.61  
0.59  
1.0  
0.9  
0.8  
0.7  
0.57  
0.6  
0.55  
0.5  
0.53  
0.51  
0.49  
0.4  
0.3  
0.2  
0.47  
0.45  
3.0  
0.1  
0
4025  
0
25  
50  
7585  
3.5  
4.0  
Ta [C]  
VDD [V]  
27  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
3. CO pin / DO pin  
3. 1 ICOH vs. VCO  
3. 2 ICOL vs. VCO  
0
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0
1
2
3
4
0
1
2
3
4
VCO [V]  
VCO [V]  
3. 3 IDOH vs. VDO  
3. 4 IDOL vs. VDO  
0
0.20  
0.05  
0.10  
0.15  
0.20  
0.25  
0.15  
0.10  
0.05  
0.30  
0
0
0.5  
1.0  
VDO [V]  
1.5  
0
1
2
3
4
V
DO [V]  
28  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
Marking Specifications  
1. SOT-23-5  
Top view  
(1) to (3):  
(4):  
Product code (refer to Product name vs. Product code)  
Lot number  
5
4
(1) (2) (3) (4)  
1
2
3
Product name vs. Product code  
Product Code  
(2)  
Product Name  
(1)  
(3)  
D
E
H
I
S-8211DAD-M5T1x  
S-8211DAE-M5T1x  
S-8211DAH-M5T1x  
S-8211DAI-M5T1x  
S-8211DAJ-M5T1x  
S-8211DAK-M5T1x  
S-8211DAL-M5T1x  
S-8211DAM-M5T1x  
S-8211DAR-M5T1x  
S-8211DAS-M5T1x  
S-8211DAU-M5T1y  
S-8211DAV-M5T1y  
S-8211DAW-M5T1y  
S-8211DBB-M5T1U  
S-8211DBD-M5T1U  
S-8211DBE-M5T1U  
S-8211DBF-M5T1U  
S-8211DBG-M5T1U  
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
2
2
2
2
2
2
2
2
2
2
2
2
2
9
9
9
9
9
J
K
L
M
R
S
U
V
W
B
D
E
F
G
Remark 1. x: G or U  
y: S or U  
2. Please select products of environmental code = U for Sn 100%, halogen-free products.  
29  
BATTERY PROTECTION IC FOR 1-CELL PACK  
S-8211D Series  
Rev.6.5_03  
2. SNT-6A  
Top view  
(1) to (3):  
(4) to (6):  
Product code (refer to Product name vs. Product code)  
Lot number  
6
5
4
(1) (2) (3)  
(4) (5) (6)  
1
2
3
Product name vs. Product code  
Product Code  
Product Name  
(1)  
(2)  
2
2
2
2
2
2
2
2
2
2
2
9
9
(3)  
D
E
F
S-8211DAD-I6T1U  
S-8211DAE-I6T1U  
S-8211DAF-I6T1U  
S-8211DAG-I6T1U  
S-8211DAI-I6T1U  
S-8211DAN-I6T1U  
S-8211DAQ-I6T1U  
S-8211DAT-I6T1U  
S-8211DAX-I6T1U  
S-8211DAY-I6T1U  
S-8211DAZ-I6T1U  
S-8211DBA-I6T1U  
S-8211DBC-I6T1U  
R
R
R
R
R
R
R
R
R
R
R
R
R
G
I
N
Q
T
X
Y
Z
A
C
30  
2.9±0.2  
1.9±0.2  
4
5
+0.1  
-0.06  
1
2
3
0.16  
0.95±0.1  
0.4±0.1  
No. MP005-A-P-SD-1.3  
TITLE  
SOT235-A-PKG Dimensions  
MP005-A-P-SD-1.3  
No.  
ANGLE  
UNIT  
mm  
ABLIC Inc.  
4.0±0.1(10 pitches:40.0±0.2)  
+0.1  
-0  
2.0±0.05  
0.25±0.1  
ø1.5  
+0.2  
-0  
4.0±0.1  
ø1.0  
1.4±0.2  
3.2±0.2  
3
4
2 1  
5
Feed direction  
No. MP005-A-C-SD-2.1  
TITLE  
SOT235-A-Carrier Tape  
MP005-A-C-SD-2.1  
No.  
ANGLE  
UNIT  
mm  
ABLIC Inc.  
12.5max.  
9.0±0.3  
Enlarged drawing in the central part  
ø13±0.2  
(60°)  
(60°)  
No. MP005-A-R-SD-1.1  
TITLE  
SOT235-A-Reel  
MP005-A-R-SD-1.1  
No.  
ANGLE  
UNIT  
QTY.  
3,000  
mm  
ABLIC Inc.  
1.57±0.03  
6
5
4
+0.05  
-0.02  
0.08  
1
2
3
0.5  
0.48±0.02  
0.2±0.05  
No. PG006-A-P-SD-2.1  
SNT-6A-A-PKG Dimensions  
PG006-A-P-SD-2.1  
TITLE  
No.  
ANGLE  
UNIT  
mm  
ABLIC Inc.  
+0.1  
-0  
ø1.5  
4.0±0.1  
2.0±0.05  
0.25±0.05  
+0.1  
ø0.5  
-0  
4.0±0.1  
0.65±0.05  
1.85±0.05  
3
2
5
1
6
4
Feed direction  
No. PG006-A-C-SD-2.0  
TITLE  
SNT-6A-A-Carrier Tape  
PG006-A-C-SD-2.0  
No.  
ANGLE  
UNIT  
mm  
ABLIC Inc.  
12.5max.  
9.0±0.3  
Enlarged drawing in the central part  
ø13±0.2  
(60°)  
(60°)  
No. PG006-A-R-SD-1.0  
SNT-6A-A-Reel  
TITLE  
No.  
PG006-A-R-SD-1.0  
ANGLE  
UNIT  
5,000  
QTY.  
mm  
ABLIC Inc.  
0.52  
2
1.36  
0.52  
1
0.3  
0.2  
1.  
2.  
(0.25 mm min. / 0.30 mm typ.)  
(1.30 mm ~ 1.40 mm)  
0.03 mm  
SNT  
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).  
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).  
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.  
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm  
or less from the land pattern surface.  
3. Match the mask aperture size and aperture position with the land pattern.  
4. Refer to "SNT Package User's Guide" for details.  
(0.25 mm min. / 0.30 mm typ.)  
(1.30 mm ~ 1.40 mm)  
1.  
2.  
SNT-6A-A  
-Land Recommendation  
TITLE  
No. PG006-A-L-SD-4.1  
No.  
PG006-A-L-SD-4.1  
ANGLE  
UNIT  
mm  
ABLIC Inc.  
Disclaimers (Handling Precautions)  
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and  
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without  
notice.  
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of  
any specific mass-production design.  
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products  
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other  
right due to the use of the information described herein.  
3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described  
herein.  
4. Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute  
maximum ratings, operation voltage range and electrical characteristics, etc.  
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to  
the use of the products outside their specified ranges.  
5. Before using the products, confirm their applications, and the laws and regulations of the region or country where they  
are used and verify suitability, safety and other factors for the intended use.  
6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related  
laws, and follow the required procedures.  
7. The products are strictly prohibited from using, providing or exporting for the purposes of the development of  
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands  
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,  
biological or chemical weapons or missiles, or use any other military purposes.  
8. The products are not designed to be used as part of any device or equipment that may affect the human body, human  
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control  
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,  
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by  
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.  
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of  
the products.  
9. In general, semiconductor products may fail or malfunction with some probability. The user of the products should  
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread  
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social  
damage, etc. that may ensue from the products' failure or malfunction.  
The entire system in which the products are used must be sufficiently evaluated and judged whether the products are  
allowed to apply for the system on customer's own responsibility.  
10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the  
product design by the customer depending on the intended use.  
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy  
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be  
careful when handling these with the bare hands to prevent injuries, etc.  
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.  
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information  
described herein does not convey any license under any intellectual property rights or any other rights belonging to  
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this  
document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express  
permission of ABLIC Inc.  
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales  
representative.  
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into  
the English language and the Chinese language, shall be controlling.  
2.4-2019.07  
www.ablic.com  

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SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

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SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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