ACE25AC200GLTMTH_技术文档

ACE25AC200GL

2M SPI NOR FLASH

Description

The ACE25AC200GL is 2M-bit Serial flash supports the standard Serial Peripheral Interface (SPI).

SPI clock frequency of up to 40MHz is supported for fast read command.

Features



512K-bit Serial Flash

256 bytes per programmable page

Standard SPI

Standard SPI: SCLK, CS#, SI, SO,

High Speed Clock Frequency

40MHz for fast read with 30PF load

Program/Erase Speed

Page Program time: 2.0ms typical

Sector Erase time: 180ms typical

Block Erase time: 0.8s typical

Chip Erase time: 6s/3s typic

Flexible Architecture



Sector of 4K-byte

Block of 64k-byte

Low Power Consumption

10mA maximum active current

5uA maximum standby current

Single Power Supply Voltage: Full voltage range:1.65~1.95V

Minimum 100,000 Program/Erase Cycle



Absolute Maximum Ratings

Parameter

Value

-40 to 85

-65 to 150

200

Unit

℃

Ambient Operating Temperature

Storage Temperature

Output Short Circuit Current

Applied Input/Output Voltage

VCC

℃

mA

V

-0.5 to 4.0

V

VER 1.2

1

ACE25AC200GL

2M SPI NOR FLASH

Packaging Type

SOP-8

SOP-8L

TSSOP-8

DIP-8

Pin Configurations

I/O

I

Pin Name

CS#

Functions

Chip Select Input

Data Output

Ground

SO

O

VSS

SI

I

Data Input

SCLK

VCC

Serial Clock Input

Power Supply

Ordering information

ACE25AC200GL XX + X H

Halogen-free

U: Tube

T: Tape and Reel

Pb - free

FM: SOP-8

FML: SOP-8L (208mil)

TM: TSSOP-8

DP: DIP-8

VER 1.2

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ACE25AC200GL

2M SPI NOR FLASH

Block Diagram

Uniform Block Sector Architecture

ACE25AC200GL 64K Bytes Block SectorArchitecture

Block

Sector

127

……

112

111

Address range

07F000H

……

07FFFFH

……

7

070000H

06F000H

……

070FFFH

06FFFFH

……

6

……

2

……

96

060000H

……

060FFFH

……

47

……

02F000H

……

02FFFFH

……

32

020000H

01F000H

……

020FFFH

01FFFFH

……

31

1

……

16

010000H

00F000H

……

010FFFH

00FFFFH

……

15

0

……

0

000000H

000FFFH

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ACE25AC200GL

2M SPI NOR FLASH

Device Operation

The ACE25AC200GL features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip

Select (CS#), Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are

supported. Input data is latched on the rising edge of SCLK and data shifts out on the falling edge of

SCLK.

Data Protection

The ACE25AC200GL provides the following data protection methods:

Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL

bit will return to reset by the following situation:



Power-Up

Write Disable (WRDI)

Write Status Register (WRSR)

Page Program (PP)

Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE)

Software Protection Mode:



SRWD=0, the Block Protect (BP2, BP1, BP0) bits define the section of the memory array that can be

read but not change

SRWD=1, the Write Status Register (WRSR) instruction is no longer accepted for execution and the

SRWD bit and Block Protect bits (BP2, BP1, BP0) are read only.

Table 1.ACE25AC200GL Protected Area Sizes

Status bit

Protect level

Protect Block

BP2

0

BP1

0

BP0

0

0(none)

1 (1 block)

2 (2 blocks)

3 (4 blocks)

4 (8 blocks)

5 (All)

None

Block 7

Block 6-7

Block 4-7

All

0

1

0

1

0

1

0

1

0

1

All

1

0

6 (All)

All

1

7 (All)

All

VER 1.2

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ACE25AC200GL

2M SPI NOR FLASH

Status Register

S7

S6

Reserved

S5

S4

S3

S2

S1

S0

SRWD

Reserved

BP2

BP1

BP0

WEL

WIP

The status and control bits of the Status Register are as follows:

WIP bit.

The Write In Progress (WIP) bit indicates whether the memory is busy in program/erase/write status

register progress. When WIP bit sets to 1, the device is busy in program/erase/write status register

progress. When WIP bit sets 0, the device is not in program, erase or write status register.

WEL bit.

The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1,

the internal Write Enable Latch is set. When set to 0, the internal Write Enable Latch is reset and no Write

Status Register, Program or Erase command is accepted.

BP2, BP1, BP0 bits.

The Block Protect (BP2, BP1, BP0) bits are non-volatile. They define the size of the area to be software

protected against Program and Erase commands. These bits are written with the Write Status Register

(WRSR) command. When the Block Protect (BP2, BP1, BP0) bits are set to 1, the relevant memory area

(as defined in Table1) becomes protected against Page Program (PP), Sector Erase (SE) and Block

Erase (BE) commands. Chip Erase command will be ignored if one or more of the Block Protect (BP2,

BP1, BP0) bits are 1.

SRWD bit.

The Status Register Write Disable (SRWD) bit is a non-volatile One Time Program (OTP) bit in the status

register that provide another software protection. Once it is set to 1, the Write Status Register (WRSR)

instruction is no longer accepted and the SRWD bit and Block Protect bits (BP2, BP1, BP0) are read only.

SRWD

Status register

Memory

Status register can be written in (WEL bit is

0

set to "1") and the SRWD, BP2-BP0 bits can The protected area cannot be program or erase

be changed

The SRWD, BP2-BP0 of status register bits

The protected area cannot be program or erase

cannot be changed

1

VER 1.2

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ACE25AC200GL

2M SPI NOR FLASH

Commands Description

All commands, addresses and data are shifted in and out of the device, beginning with the most

significant bit on the first rising edge of SCLK after CS# is driven low. Then, the one-byte command code

must be shifted in to the device, most significant bit first on SI, each bit being latched on the rising edges

of SCLK. See Table2, every command sequence starts with a one-byte command code. Depending on

the command, this might be followed by address bytes, or by data bytes, or by both or none. CS# must be

driven high after the last bit of the command sequence has been shifted in. For the command of Read,

Fast Read, Read Status Register, and Read Device ID, the shifted-in command sequence is followed by a

data-out sequence. CS# can be driven high after any bit of the data-out sequence is being shifted out.

For the command of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write

Enable, Write Disable, CS# must be driven high exactly at a byte boundary, otherwise the command is

rejected. That is CS# must driven high when the number of clock pulses after CS# being driven low is an

exact multiple of eight. For Page Program, if at any time the input byte is not a full byte, nothing will

happen and WELwill not be reset.

Table2. Commands

Command Name

Write Enable

Byte1

06H

Byte2

Byte3

Byte4

Byte5

Byte6

n-Bytes

Write Disable

Read Status Register

Write Status Register

Read Data

04H

05H

(S7-S0)

(continuous)

01H

03H

A23-A16

A15-A8

A7-A0

(D7-D0)

dummy

(D7-D0)

(Next byte) (continuous)

Fast Read

0BH

02H

(D7-D0)

(continuous)

Page Program

Sector Erase

(Next byte)

20H

Block Erase

D8H

C7/60H

Chip Erase

Manufacturer/Device

ID

90H

9FH

dummy

00H

(MID7-MID0) (DID7-DID0) (continuous)

(continuous)

(JDID15-JDI (JDID7-JDID

Read Identification

(MID7-MID0)

D8)

0)

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ACE25AC200GL

2M SPI NOR FLASH

ID Definitions

Operation Code

M7-M0

0E

ID15-ID8

60

ID7-ID0

13

9FH

90H

0E

12

Write Enable (WREN) (06H)

The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable

Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), and

Chip Erase (CE) and Write Status Register (WRSR) command. The Write Enable (WREN) command

sequence: CS# goes low→Send Write Enable command→CS# goes high.

Figure1. Write Enable Sequence Diagram

Write Disable (WRDI) (04H)

The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable

command sequence: CS# goes low Send Write Disable command CS# goes high. The WEL bit is reset by

following condition: Power-up and upon completion of the Write Status Register, Page Program, Sector

Erase, Block Erase and Chip Erase commands.

Figure2. Write Disable Sequence Diagram

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ACE25AC200GL

2M SPI NOR FLASH

Read Status Register (RDSR) (05H)

The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may

be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. When one

of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending

a new command to the device. It is also possible to read the Status Register continuously.

Figure3. Read Status Register Sequence Diagram

Write Status Register (WRSR) (01H)

The Write Status Register (WRSR) command allows new values to be written to the Status Register.

Before it can be accepted, a Write Enable (WREN) command must previously have been executed. After

the Write Enable (WREN) command has been decoded and executed, the device sets the Write Enable

Latch (WEL).

The Write Status Register (WRSR) command has no effect on S6, S5, S1 and S0 of the Status Register.

CS# must be driven high after the eighth bit of the data byte has been latched in. If not, the Write Status

Register (WRSR) command is not executed. As soon as CS# is driven high, the self-timed Write Status

Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the

Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress

(WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the

cycle is completed, the Write Enable Latch (WEL) is reset.

The Write Status Register (WRSR) command allows the user to change the values of the Block Protect

(BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as defined in

Table1.1 and 1.2. The Status Register Write Disable (SRWD) bit is a non-volatile One Time Program(OTP)

bit, the Write Status Register (WRSR) command allows the user to set the Status Register Write Disable

(SRWD) bit to 1. The Status Register Write Disable (SRWD) bit allow the device to be put in another

Software Protected Mode. Once the SRWD bit is set to 1, the Write Status Register (WRSR) command is

not executed, and the SRWD bit and Block Protect bits (BP2, BP1, BP0) are read only.

Figure4. Write Status Register Sequence Diagram

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ACE25AC200GL

2M SPI NOR FLASH

Read Data Bytes (READ) (03H)

The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), each bit being

latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO,

each bit being shifted out, at a Max frequency fR, during the falling edge of SCLK. The first byte

addressed can be at any location. The address is automatically incremented to the next higher address

after each byte of data is shifted out. Therefore, the whole memory can be read with a single Read Data

Bytes (READ) command. During an Erase, Program or Write cycle, Read Data Byte (READ) command

will be rejected without affecting the cycle in progress.

Figure5. Read Data Bytes Sequence Diagram

Read Data Bytes At Higher Speed (Fast Read)(0BH)

The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed

by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK.

Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max

frequency f , during the falling edge of SCLK. The first byte address can be at any location. The address

C

is automatically incremented to the next higher address after each byte of data is shifted out.

Figure6. Read Data Bytes at Higher Speed Sequence Diagram

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ACE25AC200GL

2M SPI NOR FLASH

Page Program (PP) (02H)

The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command

must previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page

Program command.

The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three

address bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all

zero, all transmitted data that goes beyond the end of the current page are programmed from the start

address of the same page (from the address whose 8 least significant bits (A7-A0) are all zero). CS# must

be driven low for the entire duration of the sequence. The Page Program command sequence: CS# goes

low sending Page Program command3-byte address on SI at least 1 byte data on SI

The command sequence is shown in Figure7. If more than 256 bytes are sent to the device, previously

latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within

the same page. If less than 256 data bytes are sent to device, they are correctly programmed at the

requested addresses without having any effects on the other bytes of the same page. CS# must be driven

high after the eighth bit of the last data byte has been latched in; otherwise the Page Program (PP)

command is not executed.

 CS# g

As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated.

While the Page Program cycle is in progress, the Status Register may be read to check the value of the

Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle,

and is 0 when it is completed. Write Enable Latch (WEL) bit is reset to 0 at the end of the Page Program

Cycle..

Page Program (PP) command applied to a page which is protected by the Block Protect (BP2, BP1, BP0)

bit (see Table1) is not executed.

Figure7. Page Program Sequence Diagram

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ACE25AC200GL

2M SPI NOR FLASH

Sector Erase (SE) (20H)

The Sector Erase (SE) command is for erasing the all data of the chosen sector. AWrite Enable (WREN)

command must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase

(SE) command is entered by driving CS# low, followed by the command code, and 3-address byte on SI.

Any address inside the sector is a valid address for the Sector Erase (SE) command. CS# must be driven

low for the entire duration of the sequence.

The Sector Erase command sequence: CS# goes low→sending Sector Erase command→3-byte address

on SI→CS# goes high. The command sequence is shown in Figure8. CS# must be driven high after the

eighth bit of the last address byte has been latched in; otherwise the Sector Erase (SE) command is not

executed. As soon as CS# is driven high, the self-timed Sector Erase cycle (whose duration is t_SE) is

initiated.

While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the

Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle,

and is 0 when it is completed. Write Enable Latch (WEL) bit is reset to 0 at the end of the Sector Erase

cycle. Sector Erase (SE) command applied to a sector which is protected by the Block Protect (BP2, BP1,

BP0) bit (see Table1) is not executed.

Figure8. Sector Erase Sequence Diagram

Block Erase (BE) (D8H)

The Block Erase (BE) command is for erasing the all data of the chosen block. A Write Enable (WREN)

command must previously have been executed to set the Write Enable Latch (WEL) bit. The Block Erase

(BE) command is entered by driving CS# low, followed by the command code, and three address bytes

on SI. Any address inside the block is a valid address for the Block Erase (BE) command. CS# must be

driven low for the entire duration of the sequence.

The Block Erase command sequence: CS# goes low send Block Erase command 3-byte address on

SI

e dCrSiv#engoheigshhaigfthe.r Tthhee comma

eighth bit of the last address byte has been latched in; otherwise the Block Erase (BE) command is not

executed. As soon as CS# is driven high, the self-timed Block Erase cycle (whose duration is tBE) is

initiated. While the Block Erase cycle is in progress, the Status Register may be read to check the value of

the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Block Erase

cycle, and is 0 when it is completed. Write Enable Latch (WEL) bit is reset to 0 at the end of the Block

Erase cycle. Block Erase (BE) commands applied to a block which is protected by the Block Protect (BP2,

BP1, BP0) bits (see Table1) is not executed.

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Figure9. Block Erase Sequence Diagram

ACE25AC200GL

2M SPI NOR FLASH

Chip Erase (CE) (60/C7H)

The Chip Erase (CE) command is for erasing the all data of the chip. AWrite Enable (WREN) command

must previously have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE)

command is entered by driving CS# Low, followed by the command code on Serial Data Input (SI). CS#

must be driven Low for the entire duration of the sequence.

The Chip Erase command sequence: CS# goes low send Chip Erase command CS# goes high. The

command sequence is shown in Figure10. CS# must be driven high after the eighth bit of the command

code has been latched in, otherwise the Chip Erase command is not executed. As soon as CS# is driven

high, the self-timed Chip Erase cycle (whose duration is tCE) is initiated. While the Chip Erase cycle is in

progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write

In Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is completed. Write

Enable Latch (WEL) bit is reset to 0 at the end of the Chip Erase cycle. The Chip Erase (CE) command is

ignored if one or more sectors are protected by (BP2, BP1, BP0) bits.

Figure10. Chip Erase Sequence Diagram

Read Manufacture ID/ Device ID (REMS) (90H)

The Read Manufacturer/Device ID command is for reading both the JEDEC assigned Manufacturer ID

and the specific Device ID. The command is initiated by driving the CS# pin low and shifting the command

code “90H” followed by a 24-bit address (A23-A0) of 000000H. After which, the Manufacturer ID and the

Device ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in

Figure11. If the 24-bit address is initially set to 000001H, the Device ID will be read first.

Figure11. Read Manufacture ID/ Device ID Sequence Diagram

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ACE25AC200GL

2M SPI NOR FLASH

Read Identification (RDID) (9FH)

The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed

by two bytes of device identification. The device identification indicates the memory type in the first byte,

and the memory capacity of the device in the second byte. Any Read Identification (RDID) command

while an Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in

progress.

The device is first selected by driving CS# to low. Then, the 8-bit command code for the command is

shifted in.

This is followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data

Output, each bit being shifted out during the falling edge of Serial Clock. The command sequence is

shown in Figure12. The Read Identification (RDID) command is terminated by driving CS# to high at any

time during data output. After CS# is driven high, the device returns to Standby Mode and awaits for new

command.

Figure12. Read Identification ID Sequence Diagram

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ACE25AC200GL

2M SPI NOR FLASH

Electrical Characteristics

Power-On Timing

Table3. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

VCC(min) To CS# Low

Min

10

1

Max

Unit

us

t

VSL

t

Time Delay Before Write Instruction

Write Inhibit Voltage

10

ms

V

PUW

V

WI

1

2.5

Initial Delivery State

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The

Status Register contains 00H (all Status Register bits are 0).

Data Retention and Endurance

Parameter

Test Condition

150℃

Min

10

Unit

Years

Cycles

Minimum Pattern Data Retention Time

Erase/Program Endurance

125℃

20

-40 to 85℃

100K

Latch up Characteristics

Parameter

Min

Max

Input Voltage Respect To VSS On I/O Pins

VCC Current

-1.0V

VCC+1.0V

100mA

-100mA

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ACE25AC200GL

2M SPI NOR FLASH

Capacitance Measurement Condition

Symbol

Parameter

Min

Typ

Max

6

Unit

pF

ns

V

Conditions

VIN=0V

C

Input Capacitance

IN

C

Output Capacitance

8

VOUT=0V

OUT

C

L

Load Capacitance

30

Input Rise And Fall time

Input Pulse Voltage

5

0.1VCC to 0.8VCC

0.2VCC to 0.7VCC

0.5VCC

Input Timing Reference Voltage

Output Timing Reference Voltage

V

Maximum Negative Overshoot Waveform

Maximum Positive Overshoot Waveform

Figure13. Input Test Waveform and Measurement Level

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ACE25AC200GL

2M SPI NOR FLASH

DC Characteristics(T=-40℃~85℃,VCC=2.7~3.6V)

Symbol

Parameter

Test Condition

Min.

Typ

Max.

±2

Unit

μA

I

LI

Input Leakage Current

Output Leakage Current

Standby Current

I

±2

μA

LO

CS#=VCC VIN=VCC or

VSS

I

1

5

μA

CC1

CLK=0.1VCC/0.9VCC at

120MHz for Fast Read

CLK=0.1VCC/0.9VCC at

40MHz for Read

15

13

20

I

Operating Current(Read)

mA

CC3

18

I

Operating Current(PP)

Operating Current(WRSR)

Operating Current(SE)

Operating Current(BE)

Input Low Voltage

CS#=VCC

10

mA

V

CC4

I

10

CC5

I

10

CC6

I

10

CC7

V

IL

-0.5

0.2VCC

VCC+0.4

0.4

V

IH

Input High Voltage

0.7VCC

V

Output Low Voltage

IOL=1.6mA

IOH=-100uA

V

OL

V

Output High Voltage

VCC-0.2

V

OH

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ACE25AC200GL

2M SPI NOR FLASH

AC Characteristics(T=-40℃~85℃,VCC=2.7~3.6V，C_L=30pf)

Symbol

Parameter

Serial Clock Frequency For:Fast Read(0BH),

Serial Clock Frequency For:Read(03H)

Serial Clock High Time

Min.

DC

4

Typ

Max.

40

Unit

MHz

ns

f

C

R

f

40

t

CLH

t

CLL

Serial Clock Low Time

4

ns

t

CLCH

CHCL

Serial Clock Rise Time(Slew Rate)

Serial Clock Fall Time(Slew Rate)

CS# Active Setup Time

0.2

5

V/ns

ns

t

SLCH

CHSH

SHCH

t

CS# Active Hold Time

5

ns

CS# Not Active Setup Time

5

ns

t

CHSL

SHSL

SHQZ

CLQX

DVCH

CHDX

CS# Not Active Hold Time

5

ns

t

CS# High Time (read/write)

20

ns

t

Output Disable Time

6

ns

Output Hold Time

1

2

5

ns

Data In Setup Time

ns

Data In Hold Time

ns

t

HLCH

HHCH

Hold# Low Setup Time(relative to Clock)

Hold# High Setup Time(relative to Clock)

Hold# High Hold Time(relative to Clock)

Hold# Low Hold Time(relative to Clock)

Hold# Low To High-Z Output

Hold# Low To Low-Z Output

Clock Low To Output Valid

ns

t

ns

t

CHHL

ns

t

CHHH

ns

t

HLQZ

HHQX

CLQV

WHSL

SHWL

6

ns

t

ns

6.5

ns

t

Write Protect Setup Time Before CS# Low

Write Protect Hold Time After CS# High

20

ns

100

ns

CS# High To Standby Mode With Electronic

Signature Read

t

RES2

0.1

us

t

Write Status Register Cycle Time

Page Programming Time

Sector Erase Time

100

1.8

180

0.8

6

200

2.6

360

1.5

10

ms

s

W

t

PP

SE

BE

CE

t

Block Erase Time

Chip Erase Time

s

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ACE25AC200GL

2M SPI NOR FLASH

Figure14. Serial Input Timing

Figure15. Output Timing

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ACE25AC200GL

2M SPI NOR FLASH

Packaging information

DIP-8

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

Min

Max

A

A1

A2

B

3.710

0.510

3.200

0.380

4.310

0.146

0.020

0.126

0.015

0.170

3.600

0.570

0.142

0.022

B1

C

1.524（BSC）

0.060（BSC）

0.204

9.000

6.200

7.320

0.360

9.400

6.600

7.920

0.008

0.354

0.244

0.288

0.014

0.370

0.260

0.312

D

E

E1

e

2.540 (BSC)

0.100（BSC）

L

3.000

8.400

3.600

9.000

0.118

0.331

0.142

0.354

E2

VER 1.2

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ACE25AC200GL

2M SPI NOR FLASH

Packaging information

SOP-8

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

Min

Max

A

A1

A2

b

1.350

0.100

1.350

0.330

0.170

4.700

3.800

5.800

1.750

0.250

1.550

0.510

0.250

5.100

4.000

6.200

0.053

0.004

0.053

0.013

0.006

0.185

0.150

0.228

0.069

0.010

0.061

0.020

0.010

0.200

0.157

0.244

c

D

E

E1

e

1.270 (BSC)

0.050 (BSC)

L

0.400

0°

1.270

8°

0.016

0°

0.050

8°

θ

VER 1.2

20

ACE25AC200GL

2M SPI NOR FLASH

Packaging information

SOP-8L (208mil)

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

Min

Max

A

A1

A2

b

2.150

0.250

1.900

0.500

0.250

5.330

8.100

5.380

0.085

0.010

0.075

0.020

0.010

0.210

0.319

0.212

0.050

1.700

0.350

0.100

5.130

7.700

5.180

0.002

0.067

0.014

0.004

0.202

0.303

0.204

c

D

E

E1

e

1.270 (BSC)

0.050 (BSC)

L

0.500

0°

0.850

8°

0.020

0°

0.033

8°

θ

VER 1.2

21

ACE25AC200GL

2M SPI NOR FLASH

Packaging information

TSSOP-8

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min

Max

Min

Max

D

E

2.900

4.300

0.190

0.090

6.250

3.100

4.500

0.300

0.200

6.550

1.200

1.000

0.150

0.114

0.169

0.007

0.004

0.246

0.122

0.177

0.012

0.008

0.258

0.047

0.039

0.006

b

c

E1

A

A2

A1

e

0.800

0.050

0.031

0.002

0.65 (BSC)

0.25 (TYP)

0.026 (BSC)

L

0.500

1°

0.700

7°

0.020

0.028

H

0.01 (TYP)

θ

1°

7°

VER 1.2

22

ACE25AC200GL

2M SPI NOR FLASH

Notes

ACE does not assume any responsibility for use as critical components in life support devices or systems

without the express written approval of the president and general counsel of ACE Electronics Co., LTD.

As sued herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant

into the body, or (b) support or sustain life, and shoes failure to perform when properly used in

accordance with instructions for use provided in the labeling, can be reasonably expected to result in

a significant injury to the user.

2. Acritical component is any component of a life support device or system whose failure to perform can

be reasonably expected to cause the failure of the life support device or system, or to affect its safety

or effectiveness.

ACE Technology Co., LTD.

http://www.ace-ele.com/

VER 1.2

23


型号：	ACE25AC200GLTMTH
厂家：	ACE TECHNOLOGY CO., LTD.
描述：	2M SPI NOR FLASH
文件：	总23页 (文件大小：1162K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ACE25AC200GLTMTH [ACE]

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