ACE4442B [ACE]
N-Channel Enhancement Mode MOSFET; N沟道增强型MOSFET
| 型号： | ACE4442B |
| 厂家： | 
ACE TECHNOLOGY CO., LTD. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：946K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACE4442B
N-Channel Enhancement Mode MOSFET
Description
The ACE4442B combines advanced trench MOSFET technology with a low resistance package to
provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,
Pagers.
Features
VDS=20V
ID=0.7A
RDS(ON)<360mΩ (VGS=4.5V)
RDS(ON)<420mΩ (VGS=2.5V)
RDS(ON)<560mΩ (VGS=1.8V)
ESD Protected
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
20
±12
0.7
V
V
TA=25℃
TA=70℃
Drain Current (Continuous)
ID
A
A
0.56
1
Drain Current (Pulsed)
IDM
PD
TA=25℃
TA=70℃
0.27
0.16
Power Dissipation
W
Operating temperature / storage temperature TJ/TSTG -55~150 ℃
Packaging Type
SOT-523
VER 1.2
1
ACE4442B
N-Channel Enhancement Mode MOSFET
Ordering information
ACE4442B XX + H
Halogen - free
Pb - free
KM : SOT-523
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Test Conditions
Static
Min Typ Max Unit
Drain-source breakdown voltage V(BR)DSS
VGS=0V, ID=250µA
VDS=20V, VGS=0V
VGS=VDS, IDS=250µA
VGS=±12V, VDS=0V
VGS=4.5V, ID=0.6A
VGS=2.5V, ID=0.5A
VGS=1.8V, ID=0.4A
VDS=10V, ID=0.4A
ISD=0.15A, VGS=0V
20
V
µA
V
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
IDSS
VGS(th)
IGSS
1
0.8
0.3
10
µA
300 360
Drain-source on-state resistance RDS(ON)
240 420 mΩ
420 560
Forward transconductance
Diode forward voltage
gFS
1
S
V
VSD
0.65 1.2
Switching
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Qg
Qgs
Qgd
td(on)
Tr
1.06 1.38
0.18
VGS=4.5V, VDS=10V, ID=0.6A
nC
ns
0.32
18
20
70
25
26
28
VGS=4.5V, VDS=10V
ID=0.5A, RG=1Ω
td(off)
Tf
110
40
Dynamic
Input capacitance
Output capacitance
Ciss
Coss
Crss
70
20
8
VGS=0V, VDS=10V, f=1.0MHz
pF
Reverse transfer capacitance
Note :
1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
2. Repetitive rating, pulse width limited by junction temperature.
3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.2
2
ACE4442B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
3
ACE4442B
N-Channel Enhancement Mode MOSFET
Typical Performance Characteristics
VER 1.2
4
ACE4442B
N-Channel Enhancement Mode MOSFET
Packing Information
SOT-523
VER 1.2
5
ACE4442B
N-Channel Enhancement Mode MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
6
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