ACE93C66FM+UH [ACE]

Three-wire Serial EEPROM; 三线制串行EEPROM


型号：	ACE93C66FM+UH
厂家：	ACE TECHNOLOGY CO., LTD.
描述：	Three-wire Serial EEPROM 三线制串行EEPROM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件：	总14页 (文件大小：938K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ACE93C46.56.66

Three-wire Serial EEPROM

Description

The ACE93C46/56/66 provides 1024/2048/4096 bits of serial electrically erasable programmable read only memory

(EEPROM) organized as 64/128/256 words of 16 bits each, when the ORG pin is connected to VCC and 128/256/512

words of 8 bits each when it is tied to ground. The ACE93C46/56/66 is available in space-saving 8-lead PDIP, 8-lead

TSSOP and 8-lead JEDEC SOIC packages. The ACE93C46/56/66 is enabled through the Chip Select pin (CS), and

accessed via a 3-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SK). Upon

receiving a Read instructionat DI, the address is decoded and the data is clocked out seriallyon the data output pin DO.

The WRITE cycle is completely self-timed and no separate erase cycle is required before write. The Write cycle is only

enabled when it is in the Erase/Write Enable state. When CS is brought “high” following the initiation of a write cycle, the

DO pin outputsthe Ready/Busystatus.

Features

 Low-voltage operation – 1.8 (VCC=1.8V to 5.5V)

 Three-wire serial Interface

 2MHz clock rate(5V) compatibility

 Self-timed write cycle (5 ms max)

 High-reliability – Endurance: 1 Million write cycles

Data retention: 100 Years

Packaging Type

DIP-8

SOP-8

TSSOP-8

Pin Configurations

Pin Name

Function

Chip select

Serial Data Clock

Serial Data Input

Serial Data Output

Ground

GND

Vcc

ORG

Power Supply

Internal Organization

Don’t Connect

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Block Diagram

ACE93C46

Note: When the ORG pin is connected to VCC, the “x 16” organization is selected. When it is connected to ground, the “x 8”

organization is selected. If the ORG pin is left unconnected and the application does not load the input beyond the capability

of the internal 1 Meg ohm pullup, then the “x 16” organization is selected.

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

ACE93C56/66

Note: When the ORG pin is connected to VCC, the “x 16” organization is selected. When it is connected to ground, the “x 8”

organization is selected. If the ORG pin is left unconnected and the application does not load the input beyond the capability

of the internal 1 Meg ohm pullup, then the “x 16” organization is selected.

Absolute Maximum Ratings

DC Supply Voltage

Input / Output Voltage

-0.3 to 6.5V

GND -0.3 to Vcc 0.3V

-40 to 85℃

Operating Ambient Temperature

Storage Temperature

-65 to 150℃

*Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to this device. These are

stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the

operational sections of this specification is not implied or intended. Exposure to the absolute maximum rating conditions for

extended periods may affect device reliability.

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Ordering information

ACE93C46/56/66 XX

X H

Halogen-free

U : Tube

T : Tape and Reel

Pb - free

DP : DIP-8

FM : SOP-8

TM : TSSOP-8

Pin Capacitance

Applicable over recommended operating range from T_A=25℃, f=1.0MHz,VCC=+1.8V (unless otherwise noted)

Test Conditions

Symbol Max Unit Conditions

Output Capacitance (DO)

Input Capacitance (CS, SK, DI)

COUT

CIN

VOUT=0V

VIN=0V

DC Characteristics

Applicable over recommended operating range from: T_A= -40℃ to +85℃, V_CC= +1.8V to +5.5V, (unless otherwise noted).

Symbol

V_CC1

Parameter

Test Condition

Min

1.8

2.7

4.5

Typ

Max

5.5

Units

Supply Voltage

V_CC2

5.5

V_CC3

5.5

V_CC= 5.0V,

I_CC1

Supply Current

Read at 1.0MHz

Write at 1.0MHz

V_CC= 1.8V, CS=0V

V_CC= 2.7V, CS=0V

V_CC= 5.0V, CS=0V

V_IN= 0 to V_CC

0.2

0.9

2.0

3.0

I_SB1

I_SB2

Standby Current

Input Leakage

1.0

µA

1.0

I_SB3

1.0

I_LI(1)

0.1

2.0

0.1

1.0

I_LI(2)

Input Leakage

V_IN= 0 to V_CC

3.0

I_OL

Output Leakage

Input Low Voltage

Input High Voltage

Input Low Voltage

Input High Voltage

V_IN= 0 to V_CC

1.0

2.7V≦Vcc≦5.5V

1.8V≦Vcc≦2.7V

V_IL1(3)

V_IH1(3)

V_IL2(3)

V_IH2(3)

-0.3

2.0

0.8

Vcc+0.3

-0.3

Vcc*0.7

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Symbol

Parameter

Test Condition

2.7V≦Vcc≦5.5V

IOL=2.1mA

Min

Typ

Max

Units

V_OL1

Output Low Voltage

0.4

V_OH1

V_OL2

V_OH2

Output High Voltage

Output Low Voltage

Output High Voltage

IOH=-0.4mA

2.4

1.8V≦Vcc≦2.7V

IOL=0.15mA

0.2

IOH=-100uA

Vcc-0.2

Note: 1. DI.CS. SK input pin

2. ORG input pin

3. VIL min and VIH max are reference only and are not tested.

Applicable over recommended operating range from: T_A= -40℃ to +85℃, V_CC= +1.8V to +5.5V, CL=1TTL Gate and 100pF

(unless otherwise noted).

Symbol

Parameter

Test Condition

4.5≦Vcc≦5.5v

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5≦Vcc≦5.5v

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5≦Vcc≦5.5v

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5≦Vcc≦5.5v

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

Min Typ Max

Units

fsx

SK Clock Frequency

MHz

0.25

250

1000

250

1000

250

1000

tskh

tskl

tcs

SK High Time

SK Low Time

Minimum CS Low Time

CS Setup Time

4.5≦Vcc≦5.5v

Relative to

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5≦Vcc≦5.5v

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

tcss

200

100

400

Relative to

tdis

tcsh

tdih

DI Setup Time

CS Hold Time

DI Hold Time

Relative to SK

4.5≦Vcc≦5.5v

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

100

400

Relative to

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Symbol

Parameter

Test Condition

Min Typ Max

Units

4.5≦Vcc≦5.5v

250

1000

250

1000

250

1000

100

400

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5≦Vcc≦5.5v

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5≦Vcc≦5.5v

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

4.5≦Vcc≦5.5v

2.7≦Vcc≦5.5V

1.8V≦Vcc≦5.5V

tpd1

Output Delay to “1”

AC Test

tpd0

tsv

Output Delay to “0”

CS to Status Valid

CS to DO in High

Impedance

AC Test

CS=VIL

tdf

twp

Write Cycle Time

1.5

Write

Cycle

Endurance⁽¹⁾

5.0V, 25℃

Note: 1. This parameter is characterized and is not 100% tested.

Functional Description

The ACE93C46/56/66 is accessed via a simple and versatile three-wire serial communication interface. Device

operation is controlled by seven instructions issued by the host processor. Avalid instruction starts with a rising edge of

CS and consists of a start bit (logic“1”) followed bythe appropriateop code andthedesired memoryaddresslocation.

Instruction Set for the ACE93C46

Address

Data

*8 *16

Code

Instruction SB

Comments

*16

Read data stored in memory, at

specified address

READ

EWEN

A₆-A₀

A₅-A₀

Write enable must precede all

programming modes

11XXXXX 11XXXX

REASE

WRITE

A₆-A₀

A₅-A₀

Erase memory location An-A0

D₇-D₀D₁₅-D₀

Writes memory location An-A0

Erases all memory locations. Valid

only at VCC=4.5V to 5.5V

Writes all memory locations. Valid

only at VCC=4.5V to 5.5V

Disables all programming

instructions

ERAL

WRAL

EWDS

10XXXXX 10XXXX

01XXXXX 01XXXX D₇-D₀D₁₅-D₀

00XXXXX 00XXXX

Notes: The X’s in the address field represent don’t care values and must be clocked.

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Instruction Set for the ACE93C56/66

Address

Data

Code

Instruction SB

Comments

*16

Read data stored in memory,

at specified address

Write enable must precede all

programming modes

Erase memory location

An-A0

READ

EWEN

REASE

WRITE

A₈-A₀

A₇-A₀

11XXXXXX 11XXXXXX

A₈-A₀

A₇-A₀

Writes memory location

D₇-D₀D₁₅-D₀

An-A0

Erases all memory locations.

Valid only at VCC=4.5V to

5.5V

ERAL

10XXXXXXX 10XXXXXX

Writes all memory locations.

Valid only at VCC=4.5V to

5.5V

WRAL

EWDS

01XXXXXXX 01XXXXXX D₇-D₀D₁₅-D₀

00XXXXXXX 00XXXXXX

Disables all programming

instructions

Notes: The X’s in the address field represent don’t care values and must be clocked.

READ (READ):

The Read (READ) instruction contains the address code for the memory location to be read. After the instruction and

address are decoded, data from the selected memory location is available at the serial output pin DO. Output data

changes are synchronized with the rising edges of serial clock SK. It should be noted that a dummy bit (logic “0”)

precedes the 8- or 16-bit data output string. The ACE93C56/66 supports sequential read operations. The device will

automaticallyincrement theinternal address pointer andclock out the next memorylocation as long as Chip Select (CS)

is held high .In this case ,the dummy bit (logic “0”)will not be clocked out between memory locations, thus allowing for a

continuous steam of datatobe read.

ERASE/WRITE (EWEN):

To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state when power is first

applied. An Erase/Write Enable(EWEN) instruction must be executed first before any programming instructions can be

carried out. Please note that once in the EWEN state, programming remains enabled until an EWDS instruction is

executed or VCC power is removedfrom thepart.

ERASE (ERASE):

The Erase (ERASE) instruction programs all bits in the specified memory location to the logical “1” state. The

self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the

Ready/Busystatus of the part if CS is brought high afterbeing kept lowfor aminimum of 250 ns(TCS). Alogic“1” at pin

DO indicatesthat theselected memorylocationhas been erased, andthepart isreadyfor another instruction.

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

WRITE (WRITE):

The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory location. The

self-timed programming cycle, tWP, starts after the last bit of data is received at serial data input pin DI. The DO pin

outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (TCS). A

logic “0” at DO indicates that programming is still in progress. A logic “1” indicates that the memory location at the

specified address has been written with the data pattern contained in the instruction and the part is ready for further

instructions. A Ready/Busy status cannot be obtained if the CS is brought high after the end of the selftimed

programming cycle, TWP.

ERASEALL(ERAL):

The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1” state and is primarily used for

testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a

minimum of 250 ns(TCS).The ERALinstruction is valid onlyat VCC = 5.0V± 10%.

WRITEALL(WRAL):

The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the instruction.

The DO pin outputsthe Ready/Busy status of the part if CS is brought high after being kept lowfor aminimum of 250ns

(TCS).TheWRALinstruction is valid onlyat VCC = 5.0V± 10%.

ERASE/WRITE DISABLE (EWDS):

To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all programming

modes and should be executed after all programming operations. The operation of the Read instruction is independent

of boththe EWENand EWDS instructions andcan beexecuted at anytime.

Timing Diagrams

Note: This is the minimum SK period.

Figure 1: Synchronous Data Timing

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Organization Key for Timing Diagrams

ACE93C56 (2K)

ACE93C66 (4K)

ACE93C46 (1K)

I/O

A8⁽¹⁾

*16

A7⁽²⁾

D15

*16

D15

Note : 1. A8 is a DON’T CARE value ,but the extra clock is required.

2. A7 is a DON’T CARE value ,but the extra clock is required.

Figure 2: Read Timing

Figure 3: EWEN Timing

Figure 4: EWDS Timing

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Figure 5: WRITE Timing

Note: Valid only at VCC=4.5V to 5.5V

Figure 6: WRAL Timing⁽¹⁾

Figure 7: ERASE Timing

Figure 8: ERAL Timing⁽¹⁾

Note: Valid only at VCC=4.5V to 5.5V

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Packaging information

DIP-8

Note: Dimensions in Millimeters.

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Packaging information

SOP-8

Note: Dimensions in Millimeters.

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Packaging information

TSSOP-8

Note: Dimensions in Millimeters.

VER 1.5

ACE93C46.56.66

Three-wire Serial EEPROM

Notes

ACE does not assume any responsibility for use as critical components in life support devices or systems

without the express written approval of the president and general counsel of ACE Electronics Co., LTD.

As sued herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant

into the body, or (b) support or sustain life, and shoes failure to perform when properly used in

accordance with instructions for use provided in the labeling, can be reasonably expected to result in

a significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can

be reasonably expected to cause the failure of the life support device or system, or to affect its safety

or effectiveness.

ACE Technology Co., LTD.

http://www.ace-ele.com/

VER 1.5

ACE93C66FM+UH [ACE]

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