ACE9435B [ACE]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | ACE9435B |
| 厂家： | 
ACE TECHNOLOGY CO., LTD. |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：521K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Description
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench
technology, which is especially used to minimize on-state resistance. This device is particularly suited for
low voltage application such as portable equipment, power management and other battery powered
circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
VDS(V)=-320V, ID=-5.24.1A
RDS(ON)=51mΩ @ VGS=-10V
RDS(ON)=68mΩ @ VGS=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol
VDSS
Max
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
-5.2
-50
V
Continuous TA=25OC
Pulsed (Note 2)
Total Power Dissipation (Note 1)
Drain Current (Note 1)
ID
A
PD
1.5
W
O
Operating and Storage Temperature Range
TJ,TSTG -55 to 150 C
Packaging Type
SOP-8
8
7
6
5
1
2
3
4
VER 1.2
1
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE9435B XX + H
Halogen - free
Pb - free
FM : SOP-8
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max. Unit
Off characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
V(BR)DSS
IDSS
VGS=0V, ID=-250uA
VDS=-24V, VGS=0V
VGS=±20V, VDS=0V
-30
-36
0.02
±1.5
V
-1
uA
nA
IGSS
±100
On characteristics
VGS=-10V, ID=-4.6A
VGS=-4.5V, ID=-2A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-6A
51
68
60
82
-3
Drain-Source On-State Resistance
RDS(ON)
mΩ
Gate Threshold Voltage
VGS(th)
gFS
-1
-1.46
12
V
S
Forward Transconductance
Switching
Turn-On Delay Time
Turn-Off Delay Time
Td(on)
td(off)
8.6
VDS=-15V,RL=2.5Ω
RGEN=3Ω, VGS=-10V
ns
28.2
Dynamic Characteristics
Ciss
Input Capacitance
Output Capacitance
550
60
VDS=-15V, VGS=0V
f=1MHz
Coss
Crss
pF
V
Reverse Transfer Capacitance
50
Drain-source diode characteristics and maximum ratings
Diode Forward Voltage VSD VGS=0V, IS=-1A
-0.81
Note: 1. The value of PD is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based
on the DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
VER 1.2
2
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
VER 1.2
3
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Packing Information
SOP-8
Unit: mm
VER 1.2
4
ACE9435B
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
5
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