AD586KQ [ADI]

High Precision 5 V Reference; 高精度5 V基准


型号：	AD586KQ
厂家：	ADI
描述：	High Precision 5 V Reference 高精度5 V基准电源电路参考电压源
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High Precision

5 V Reference

AD586

FUNCTIO NAL BLO CK D IAGRAM

FEATURES

Laser Trim m ed to High Accuracy:

5.000 V ؎2.0 m V (M Grade)

Trim m ed Tem perature Coefficient:

2 ppm / ؇C m ax, 0؇C to +70؇C (M Grade)

5 ppm / ؇C m ax, –40؇C to +85؇C (B & L Grades)

10 ppm / ؇C m ax, –55؇C to +125؇C (T Grade)

Low Noise, 100 nV/ √Hz

Noise Reduction Capability

Output Trim Capability

MIL-STD-883 Com pliant Versions Available

Industrial Tem perature Range SOICs Available

Output Capable of Sourcing or Sinking 10 m A

P RO D UCT D ESCRIP TIO N

P RO D UCT H IGH LIGH TS

T he AD586 represents a major advance in the state-of-the-art in

monolithic voltage references. Using a proprietary ion-implanted

buried Zener diode and laser wafer trimming of high stability

thin-film resistors, the AD586 provides outstanding perfor-

mance at low cost.

1. Laser trimming of both initial accuracy and temperature

coefficients results in very low errors over temperature with-

out the use of external components. T he AD586M has a

maximum deviation from 5.000 V of ±2.45 mV between

0°C and +70°C, and the AD586T guarantees ±7.5 mV

maximum total error between –55°C and +125°C.

T he AD586 offers much higher performance than most other

5 V references. Because the AD586 uses an industry standard

pinout, many systems can be upgraded instantly with the

AD586. T he buried Zener approach to reference design pro-

vides lower noise and drift than bandgap voltage references. T he

AD586 offers a noise reduction pin which can be used to further

reduce the noise level generated by the buried Zener.

2. For applications requiring higher precision, an optional fine-

trim connection is provided.

3. Any system using an industry standard pinout reference can

be upgraded instantly with the AD586.

4. Output noise of the AD586 is very low, typically 4 µV p-p. A

noise reduction pin is provided for additional noise filtering

using an external capacitor.

T he AD586 is recommended for use as a reference for 8-, 10-,

12-, 14- or 16-bit D/A converters which require an external

precision reference. T he device is also ideal for successive

approximation or integrating A/D converters with up to 14 bits

of accuracy and, in general, can offer better performance than

the standard on-chip references.

5. T he AD586 is available in versions compliant with MIL-

ST D-883. Refer to the Analog Devices Military Products

Databook or current AD586/883B data sheet for detailed

specifications.

T he AD586J, K, L and M are specified for operation from 0°C

to +70°C, the AD586A and B are specified for –40°C to +85°C

operation, and the AD586S and T are specified for –55°C to

+125°C operation. T he AD586J, K, L and M are available in an

8-pin plastic DIP. T he AD586J, K, L, A and B are available in

an 8-pin plastic surface mount small outline (SO) package. T he

AD586J, K, L, S and T are available in an 8-pin cerdip package.

REV. C

Inform ation furnished by Analog Devices is believed to be accurate and

reliable. However, no responsibility is assum ed by Analog Devices for its

use, nor for any infringem ents of patents or other rights of third parties

which m ay result from its use. No license is granted by im plication or

otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norw ood, MA 02062-9106, U.S.A.

Tel: 617/ 329-4700

Fax: 617/ 326-8703

(@ T = + 25°C, V = +15 V unless otherwise noted)

AD586–SPECIFICATIONS

AD 586J

AD 586K/A

AD 586L/B

AD 586M

AD 586S

AD 586T

Model

Min Typ Max Min Typ Max Min Typ Max

Units

Output Voltage

4.980

5.020 4.995

5.005 4.9975

5.0025 4.998

5.002 4.990

5.010 4.9975

5.0025

Output Voltage Drift^l

0°C to +70°C

ppm/°C

–55°C to +125°C

Gain Adjustment

–2

Line Regulation¹

10.8 V < +V_IN< 36 V

T _MINto T _MAX

11.4 V < +V_IN< 36 V

T _MINto T _MAX

100

±µV/V

µV/mA

150

Load Regulation^l

Sourcing 0 < I_OUT< 10 mA

25°C

100

150

T _MINto T _MAX

Sinking –10 < I_OUT< 0 mA

25°C

400

Quiescent Current

Power Consumption

Output Noise

0.1 Hz to 10 Hz

µV p-p

Spectral Density, 100 Hz

100

nV/√Hz

Long-T erm Stability

ppm/1000 Hr

Short-Circuit Current-to-Ground

45 60

T emperature Range

Specified Performance²

+70

–40

+70

+85

–40

+70

+85

+70 –55

+85 –55

+125 –55

+125 °C

+125

Operating Performance³

NOT ES

–40

+85 –40

–40

¹Maximum output voltage drift is guaranteed for all packages and grades. Cerdip packaged parts are also 100°C production tested.

²Lower row shows specified performance for A and B grades.

³T he operating temperature range is defined as the temperatures extremes at which the device will still function. Parts may deviate from their specified performance outside their

specified temperature range.

Specifications subject to change without notice.

Specifications in boldface are rested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels. All min and max specifica-

tions are guaranteed, although only those shown in boldface are tested on all production units unless otherwise specified.

ABSO LUTE MAXIMUM RATINGS^*

CO NNECTIO N D IAGRAM

(Top View)

V_INto Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V

Power Dissipation (25°C) . . . . . . . . . . . . . . . . . . . . . 500 mW

Storage T emperature . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead T emp (Soldering, 10 sec) . . . . . . . . . . . . . . . . . . +300°C

Package T hermal Resistance

θ_JC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22°C/W

θ_JA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W

Output Protection: Output safe for indefinite short to ground or

V_IN

*Stresses above those listed under “Absolute Maximum Ratings” may cause

permanent damage to the device. T his is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the

operational section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

–2–

REV. C

AD586

The following specifications are tested at the die level for AD586JCHIPS. These die are probed at 25؇C

only. (T = +25؇C, V = +15 V unless otherwise noted)

DlE SPECIFlCATIONS

AD 586JCH IP S

P aram eter

Min

Typ

Max

Units

Output Voltage

Gain Adjustment

4.980

–2

5.020

Line Regulation

10.8 V < + V_IN< 36 V

Load Regulation

100

±µV/V

Sourcing 0 < I_OUT< 10 mA

Sinking –10 < I_OUT< 0 mA

Quiescent Current

100

400

µV/mA

Short-Circuit Current-to-Ground

NOT ES

¹Both V_OUTpads should be connected to the output.

D ie Thickness: T he standard thickness of Analog Devices Bipolar dice is 24 mils ± 2 mils.

D ie D im ensions: T he dimensions given have a tolerance of ±2 mils.

Backing: T he standard backside surface is silicon (not plated). Analog Devices does not

recommend gold-backed dice for most applications.

E dges: A diamond saw is used to separate wafers into dice thus providing perpendicular

edges half-way through the die.

In contrast to scribed dice, this technique provides a more uniform die shape and size. T he

perpendicular edges facilitate handling (such as tweezer pick-up) while the uniform shape

and size simplifies substrate design and die attach.

Top Sur face: T he standard top surface of the die is covered by a layer of glassivation. All

areas are covered except bonding pads and scribe lines.

Sur face Metalization: T he metalization to Analog Devices bipolar dice is aluminum.

Minimum thickness is 10,000Å.

Bonding P ads: All bonding pads have a minimum size of 4 mils by 4 mils. T he passivation

windows have 3.5 mils by 3.5 mils minimum.

O RD ERING GUID E

Initial

Error

Tem perature

Coefficient

Tem perature

Range

P ackage

O ption²

Model¹

AD586JN

AD586JQ

AD586JR

20 mV

5 mV

2.5 mV

2 mV

25 ppm/°C

15 ppm/°C

5 ppm/°C

2 ppm/°C

15 ppm/°C

5 ppm/°C

20 ppm/°C

10 ppm/°C

25 ppm/°C

0°C to +70°C

–40°C to +85°C

0°C to +70°C

–55°C to +125°C

0°C to +70°C

N-8

Q-8

SO-8

N-8

Q-8

SO-8

N-8

SO-8

N-8

SO-8

Q-8

AD586KN

AD586KQ

AD586KR

AD586LN

AD586LR

AD586MN

AD586AR

AD586BR

AD586LQ

AD586SQ

AD586T Q

AD586JCHIPS

5 mV

2.5 mV

10 mV

2.5 mV

20 mV

Q-8

NOT ES

¹For details on grade and package offerings screened in accordance with MIL-ST D-883, r efer to the Analog Devices Military

Products Databook or current AD586/883B data sheet.

²N = Plastic DIP; Q = Cerdip; SO = Small Outline IC (SOIC).

CAUTIO N

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AD586 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. T herefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. C

–3–

AD586

TH EO RY O F O P ERATIO N

NO ISE P ERFO RMANCE AND RED UCTIO N

T he AD586 consists of a proprietary buried Zener diode refer-

ence, an amplifier to buffer the output and several high stability

thin-film resistors as shown in the block diagram in Figure 1.

T his design results in a high precision monolithic 5 V output

reference with initial offset of 2.0 mV or less. T he temperature

compensation circuitry provides the device with a temperature

coefficient of under 2 ppm/°C.

T he noise generated by the AD586 is typically less than 4 µV

p-p over the 0.1 Hz to 10 Hz band. Noise in a 1 MHz band-

width is approximately 200 µV p-p. T he dominant source of this

noise is the buried Zener which contributes approximately

100 nV/√Hz. In comparison, the op amp’s contribution is negli-

gible. Figure 3 shows the 0.1 Hz to 10 Hz noise of a typical

AD586. T he noise measurement is made with a bandpass filter

made of a 1-pole high-pass filter with a corner frequency at

0.1 Hz and a 2-pole low-pass filter with a corner frequency at

12.6 Hz to create a filter with a 9.922 Hz bandwidth.

Using the bias compensation resistor between the Zener output

and the noninverting input to the amplifier, a capacitor can be

added at the NOISE REDUCT ION pin (Pin 8) to form a low-

pass filter and reduce the noise contribution of the Zener to the

circuit.

If further noise reduction is desired, an external capacitor may

be added between the NOISE REDUCT ION pin and ground as

shown in Figure 2. T his capacitor, combined with the 4 kΩ R_S

and the Zener resistances form a low-pass filter on the output of

the Zener cell. A 1 µF capacitor will have a 3 dB point at 12 Hz,

and it will reduce the high frequency (to 1 MHz) noise to about

160 µV p-p. Figure 4 shows the 1 MHz noise of a typical AD586

both with and without a 1 µF capacitor.

Figure 1. AD586 Functional Block Diagram

AP P LYING TH E AD 586

T he AD586 is simple to use in virtually all precision reference

applications. When power is applied to Pin 2 and Pin 4 is

grounded, Pin 6 provides a 5 V output. No external components

are required; the degree of desired absolute accuracy is achieved

simply by selecting the required device grade. T he AD586 re-

quires less than 3 mA quiescent current from an operating sup-

ply of +12 V or +15 V.

Figure 3. 0.1 Hz to 10 Hz Noise

An external fine trim may be desired to set the output level to

exactly 5.000 V (calibrated to a main system reference). System

calibration may also require a reference voltage that is slightly

different from 5.000 V, for example, 5.12 V for binary applica-

tions. In either case, the optional trim circuit shown in Figure 2

can offset the output by as much as 300 mV, if desired, with

minimal effect on other device characteristics.

Figure 4. Effect of 1 µF Noise Reduction Capacitor on

Broadband Noise

TURN-O N TIME

Upon application of power (cold start), the time required for the

output voltage to reach its final value within a specified error

band is defined as the turn-on settling time. T wo components

normally associated with this are: the time for the active circuits

to settle, and the time for the thermal gradients on the chip to

stabilize. Figure 5 shows the turn-on characteristics of the

AD586. It shows the settling to be about 60 µsec to 0.01%.

Note the absence of any thermal tails when the horizontal scale

is expanded to l ms/cm in Figure 5b.

Figure 2. Optional Fine Trim Configuration

–4–

REV. C

AD586

Output turn-on time is modified when an external noise reduc-

tion capacitor is used. When present, this capacitor acts as an

additional load to the internal Zener diode’s current source, re-

sulting in a somewhat longer turn-on time. In the case of a 1 µF

capacitor, the initial turn-on time is approximately 400 ms to

0.01% (see Figure 5c).

D YNAMIC P ERFO RMANCE

T he output buffer amplifier is designed to provide the AD586

with static and dynamic load regulation superior to less com-

plete references.

Many A/D and D/A converters present transient current loads

to the reference, and poor reference response can degrade the

converter’s performance.

Figure 6 displays the characteristics of the AD586 output ampli-

fier driving a 0 mA to 10 mA load.

Figure 5. Turn-On Characteristics

REV. C

–5–

AD586

In some applications, a varying load may be both resistive and

capacitive in nature, or the load may be connected to the

AD586 by a long capacitive cable.

Centigrade; i.e., ppm/°C. However, because of nonlinearities in

temperature characteristics which originated in standard Zener

references (such as “S” type characteristics), most manufactur-

ers have begun to use a maximum limit error band approach to

specify devices. T his technique involves the measurement of the

output at three or more different temperatures to specify an out-

put voltage error band.

Figure 7 displays the output amplifier characteristics driving a

1000 pF, 0 to 10 mA load.

Figure 9 shows the typical output voltage drift for the AD586L

and illustrates the test methodology. T he box in Figure 9 is

bounded on the sides by the operating temperature extremes,

and on the top and the bottom by the maximum and minimum

output voltages measured over the operating temperature range.

T he slope of the diagonal drawn from the lower left to the upper

right corner of the box determines the performance grade of the

device.

Figure 7a. Capacitive Load Transient Response Test Circuit

Figure 7b. Output Response with Capacitive Load

LO AD REGULATIO N

Figure 9. Typical AD586L Tem perature Drift

T he AD586 has excellent load regulation characteristics. Figure

8 shows that varying the load several mA changes the output by

a few µV. T he AD586 has somewhat better load regulation per-

formance sourcing current than sinking current.

Each AD586J, K and L grade unit is tested at 0°C, +25°C and

+70°C. Each AD586SQ and T Q grade unit is tested at –55°C,

+25°C and +125°C. T his approach ensures that the variations

of output voltage that occur as the temperature changes within

the specified range will be contained within a box whose diago-

nal has a slope equal to the maximum specified drift. T he posi-

tion of the box on the vertical scale will change from device to

device as initial error and the shape of the curve vary. T he maxi-

mum height of the box for the appropriate temperature range

and device grade is shown in Figure 10. Duplication of these

results requires a combination of high accuracy and stable tem-

perature control in a test system. Evaluation of the AD586 will

produce a curve similar to that in Figure 9, but output readings

may vary depending on the test methods and equipment utilized.

D EVICE

GRAD E

MAXIMUM O UTP UT CH ANGE

(m V)

Figure 8. Typical Load Regulation Characteristics

0؇C TO +70؇C

–40؇C TO +85؇C –55؇C TO +125؇C

TEMP ERATURE P ERFO RMANCE

AD586J

AD586K

AD586L

AD586M

AD586A

AD586B

AD586S

AD586T

8.75

5.25

1.75

0.70

T he AD586 is designed for precision reference applications

where temperature performance is critical. Extensive tempera-

ture testing ensures that the device’s high level of performance is

maintained over the operating temperature range.

3.12

9.37

18.00

9.00

Some confusion exists in the area of defining and specifying ref-

erence voltage error over temperature. Historically, references

have been characterized using a maximum deviation per degree

Figure 10. Maxim um Output Change in m V

–6–

REV. C

AD586

NEGATIVE REFERENCE VO LTAGE FRO M AN AD 586

T he AD586 can be used to provide a precision –5.000 V output

as shown in Figure 11. T he V_INpin is tied to at least a +6 V

supply, the output pin is grounded, and the AD586 ground pin

is connected through a resistor, R_S, to a –15 V supply. T he –5 V

output is now taken from the ground pin (Pin 4) instead of

V_{OUT .}It is essential to arrange the output load and the supply

resistor R_Sso that the net current through the AD586 is be-

tween 2.5 mA and 10.0 mA. T he temperature characteristics

and long-term stability of the device will be essentially the same

as that of a unit used in the standard +5 V output configuration.

Figure 13. AD586 as a 5 V Reference for a CMOS

Dual DAC

STACKED P RECISIO N REFERENCES FO R

MULTIP LE VO LTAGES

Often, a design requires several reference voltages. T hree

AD586s can be stacked, as shown in Figure 14, to produce

+5.000 V, +10.000 V, and +15.000 V outputs. T his scheme

can be extended to any number of AD586s as long as the

maximum load current is not exceeded. T his design pro-

vides the additional advantage of improved line regulation

on the +5.0 V output. Changes in V_INof +18 V to +50 V

produces an output change that is below the noise level of

the references.

Figure 11. AD586 as a Negative 5 V Reference

USING TH E AD 586 WITH CO NVERTERS

T he AD586 is an ideal reference for a wide variety of 8-, 12-,

14- and 16-bit A/D and D/A converters. Several representative

examples follow.

5 V REFERENCE WITH MULTIP LYING CMO S D /A O R

A/D CO NVERTERS

T he AD586 is ideal for applications with 10- and 12-bit multi-

plying CMOS D/A converters. In the standard hookup, as

shown in Figure 12, the AD586 is paired with the AD7545

12-bit multiplying DAC and the AD711 high-speed BiFET Op

Amp. T he amplifier DAC configuration produces a unipolar

0 V to –5 V output range. Bipolar output applications and other

operating details can be found on the individual product data

sheets.

Figure 14. Multiple AD586s Stacked for Precision 5 V,

10 V and 15 V Outputs

Figure 12. Low-Power 12-Bit CMOS DAC Application

T he AD586 can also be used as a precision reference for mul-

tiple DACs. Figure 13 shows the AD586, the AD7628 dual

DAC and the AD712 dual op amp hooked up for single supply

operation to produce 0 V to –5 V outputs. Because both DACs

are on the same die and share a common reference and output

op amps, the DAC outputs will exhibit similar gain T Cs.

REV. C

–7–

AD586

P RECISIO N CURRENT SO URCE

T he design of the AD586 allows it to be easily configured as a

current source. By choosing the control resistor R_Cin Figure 15,

you can vary the load current from the quiescent current (2 mA

typically) to approximately 10 mA. T he compliance voltage of

this circuit varies from about +5 V to +21 V depending upon

the value of V_IN

Figure 15. Precision Current Source

P RECISIO N H IGH CURRENT SUP P LY

capacitor is required only if the load has a significant capacitive

component. If the load is purely resistive, improved high-

frequency supply rejection results can be obtained by removing

the capacitor.

For higher currents, the AD586 can easily be connected to a

power PNP or power Darlington PNP device. T he circuit in

Figure 16 can deliver up to 4 amps to the load. T he 0.1 µF

Figure 16a. Precision High-Current Current Source

Figure 16b. Precision High-Current Voltage Source

O UTLINE D IMENSIO NS

D imensions shown in inches and (mm.)

Mini-D IP (N-8) P ackage

Cer dip (Q -8) P ackage

Sm all O utline (R-8) P ackage

–8–

REV. C

AD586KQ [ADI]

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