AD650A [ADI]

Voltage-to-Frequency and Frequency-to-Voltage Converter; 电压 - 频率和频率 - 电压转换器
AD650A
型号: AD650A
厂家: ADI    ADI
描述:

Voltage-to-Frequency and Frequency-to-Voltage Converter
电压 - 频率和频率 - 电压转换器

转换器
文件: 总12页 (文件大小:285K)
中文:  中文翻译
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Voltage-to-Frequency and  
Frequency-to-Voltage Converter  
a
AD650  
PIN CONFIGURATION  
FEATURES  
V/F Conversion to 1 MHz  
Reliable Monolithic Construction  
Very Low Nonlinearity  
0.002% typ at 10 kHz  
0.005% typ at 100 kHz  
0.07% typ at 1 MHz  
Input Offset Trimmable to Zero  
CMOS or TTL Compatible  
Unipolar, Bipolar, or Differential V/F  
V/F or F/V Conversion  
Available in Surface Mount  
MIL-STD-883 Compliant Versions Available  
PRODUCT DESCRIPTION  
The AD650JN and AD650KN are offered in a plastic 14-lead  
DIP package. The AD650JP is available in a 20-lead plastic  
leaded chip carrier (PLCC). Both plastic packaged versions of the  
AD650 are specified for the commercial (0°C to +70°C) tempera-  
ture range. For industrial temperature range (–25°C to +85°C)  
applications, the AD650AD and AD650BD are offered in a  
ceramic package. The AD650SD is specified for the full –55°C  
to +125°C extended temperature range.  
The AD650 V/F/V (voltage-to-frequency or frequency-to-voltage  
converter) provides a combination of high frequency operation  
and low nonlinearity previously unavailable in monolithic form.  
The inherent monotonicity of the V/F transfer function makes  
the AD650 useful as a high-resolution analog-to-digital converter.  
A flexible input configuration allows a wide variety of input volt-  
age and current formats to be used, and an open-collector output  
with separate digital ground allows simple interfacing to either  
standard logic families or opto-couplers.  
PRODUCT HIGHLIGHTS  
1. In addition to very high linearity, the AD650 can operate at  
full-scale output frequency up to 1 MHz. The combination of  
these two features makes the AD650 an inexpensive solution  
for applications requiring high resolution monotonic A/D  
conversion.  
The linearity error of the AD650 is typically 20 ppm (0.002%  
of full scale) and 50 ppm (0.005%) maximum at 10 kHz full  
scale. This corresponds to approximately 14-bit linearity in an  
analog-to-digital converter circuit. Higher full-scale frequencies  
or longer count intervals can be used for higher resolution con-  
versions. The AD650 has a useful dynamic range of six decades  
allowing extremely high resolution measurements. Even at 1 MHz  
full scale, linearity is guaranteed less than 1000 ppm (0.1%) on  
the AD650KN, BD, and SD grades.  
2. The AD650 has a very versatile architecture that can be con-  
figured to accommodate bipolar, unipolar, or differential  
input voltages, or unipolar input currents.  
3. TTL or CMOS compatibility is achieved using an open  
collector frequency output. The pull-up resistor can be  
connected to voltages up to +30 V, or +15 V or +5 V for  
conventional CMOS or TTL logic levels.  
In addition to analog-to-digital conversion, the AD650 can be used  
in isolated analog signal transmission applications, phased locked-  
loop circuits, and precision stepper motor speed controllers. In  
the F/V mode, the AD650 can be used in precision tachometer  
and FM demodulator circuits.  
4. The same components used for V/F conversion can also be  
used for F/V conversion by adding a simple logic biasing net-  
work and reconfiguring the AD650.  
The input signal range and full-scale output frequency are user-  
programmable with two external capacitors and one resistor.  
Input offset voltage can be trimmed to zero with an external  
potentiometer.  
5. The AD650 provides separate analog and digital grounds.  
This feature allows prevention of ground loops in real-world  
applications.  
6. The AD650 is available in versions compliant with MIL-  
STD-883. Refer to the Analog Devices Military Products  
Databook or current AD650/883B data sheet for detailed  
specifications.  
REV. C  
Information furnished by Analog Devices is believed to be accurate and  
reliable. However, no responsibility is assumed by Analog Devices for its  
use, nor for any infringements of patents or other rights of third parties  
which may result from its use. No license is granted by implication or  
otherwise under any patent or patent rights of Analog Devices.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781/329-4700  
Fax: 781/326-8703  
World Wide Web Site: http://www.analog.com  
© Analog Devices, Inc., 2000  
(@ +25؇C, with V = ؎15 V, unless otherwise noted)  
AD650–SPECIFICATIONS  
S
AD650J/AD650A  
AD650K/AD650B  
Typ  
AD650S  
Typ  
Model  
Min  
Typ  
Max  
Min  
Max  
Min  
Max  
Units  
DYNAMIC PERFORMANCE  
Full-Scale Frequency Range  
Nonlinearity1 fMAX = 10 kHz  
Nonlinearity1 fMAX = 100 kHz  
Nonlinearity1 fMAX = 500 kHz  
Nonlinearity1 fMAX = 1 MHz  
Full-Scale Calibration Error2, 100 kHz  
Full-Scale Calibration Error2, 1 MHz  
vs. Supply3  
1
1
1
MHz  
%
%
%
%
%
%
0.002  
0.005  
0.02  
0.1  
5
10  
0.005  
0.02  
0.05  
0.002  
0.005  
0.02  
0.05  
5
0.005  
0.02  
0.05  
0.1  
0.002  
0.005  
0.02  
0.05  
5
0.005  
0.02  
0.05  
0.1  
10  
10  
–0.015  
+0.015  
–0.015  
+0.015  
–0.015  
+0.015  
% of FSR/V  
vs. Temperaturc  
A, B, and S Grades  
at 10 kHz  
at 100 kHz  
75  
150  
75  
150  
75  
150  
ppm/°C  
ppm/°C  
J and K Grades  
at 10 kHz  
at 100 kHz  
75  
150  
75  
150  
ppm/°C  
ppm/°C  
BIPOLAR OFFSET CURRENT  
Activated by 1.24 kBetween Pins 4 and 5  
0.45  
0.5  
0.55  
0.45  
0.5  
0.55  
0.45  
0.5  
0.55  
mA  
DYNAMIC RESPONSE  
Maximum Settling Time for Full Scale  
Step Input  
Overload Recovery Time  
Step Input  
1 Pulse of New Frequency Plus 1 µs 1 Pulse of New Frequency Plus 1 µs 1 Pulse of New Frequency Plus 1 µs  
1 Pulse of New Frequency Plus 1 µs 1 Pulse of New Frequency Plus 1 µs 1 Pulse of New Frequency Plus 1 µs  
ANALOLG INPUT AMPLIFIER (V/F Conversion)  
Current Input Range (Figure 1)  
Voltage Input Range (Figure 5)  
Differential Impedance  
0
–10  
+0.6  
0
0
–10  
+0.6  
0
0
–10  
+0.6  
0
mA  
V
2 Mʈ10 pF  
2 Mʈ10 pF  
2 Mʈ10 pF  
Common-Mode Impedance  
Input Bias Current  
1000 Mʈ10 pF  
1000 Mʈ10 pF  
1000 Mʈ10 pF  
Noninverting Input  
Inverting Input  
40  
8
100  
؎20  
40  
8
100  
؎20  
40  
8
100  
؎20  
nA  
nA  
Input Offset Voltage  
(Trimmable to Zero)  
؎4  
؎4  
؎4  
mV  
vs. Temperature (TMIN to TMAX  
Safe Input Voltage  
)
30  
VS  
30  
30  
µ V/°C  
C
VS  
VS  
COMPARATOR (F/V Conversion)  
Logic “0” Level  
–VS  
0
0.1  
–1  
+VS  
(0.3 × tOS  
–VS  
0
0.1  
–1  
+VS  
(0.3 × tOS  
–VS  
0
0.1  
+1  
+VS  
(0.3 × tOS  
V
V
µs  
kΩ  
Logic “1” Level  
Pulse Width Range4  
Input Impedance  
)
)
)
250  
250  
250  
OPEN COLLECTOR OUTPUT (V/F Conversion)  
Output Voltage in Logic “0”  
ISINK 8 mA, TMIN to TMAX  
0.4  
100  
+36  
0.4  
100  
+36  
0.4  
100  
+36  
V
nA  
V
Output Leakage Current in Logic “1”  
Voltage Range5  
0
0
0
AMPLIFIER OUTPUT (F/V Conversion)  
Voltage Range (1500 min Load Resistance)  
Source Current (750 max Load Resistance)  
Capacitive Load (Without Oscillation)  
0
10  
+10  
100  
0
10  
+10  
100  
0
10  
+10  
100  
V
mA  
pF  
POWER SUPPLY  
Voltage, Rated Performance  
Quiescent Current  
9
؎18  
8
9
؎18  
8
9
؎18  
8
V
mA  
TEMPERATURE RANGE  
Rated Performance – N Package  
0
–25  
+70  
+85  
0
–25  
+70  
+85  
°C  
°C  
Rated Performance –  
D Package  
–55  
+125  
NOTES  
1Nonlinearity is defined as deviation from a straight line from zero to full scale, expressed as a fraction of full scale.  
2Full-scale calibration error adjustable to zero.  
3Measured at full-scale output frequency of 100 kHz.  
4Refer to F/V conversion section of the text.  
5Referred to digital ground.  
Specifications subject to change without notice.  
Specifications shown in boldface are tested on all production units at final electrical test. Results from those test are used to calculate outgoing quality levels. All min and max  
specifications are guaranteed, although only those shown in boldface are tested on all production units.  
–2–  
REV. C  
AD650  
ABSOLUTE MAXIMUM RATINGS  
PIN CONFIGURATION  
Total Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V  
Storage Temperature . . . . . . . . . . . . . . . . . . . –55°C to +150°C  
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . 10 V  
Maximum Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . VS  
Open Collector Output Voltage Above Digital GND . . . . . 36 V  
Open Collector Output Current . . . . . . . . . . . . . . . . . . 50 mA  
Amplifier Short Circuit to Ground . . . . . . . . . . . . . . Indefinite  
Comparator Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . VS  
PIN  
NO.  
D-14  
N-14  
P-20A  
1
2
3
4
VOUT  
+IN  
–IN  
VOUT  
+IN  
–IN  
NC  
VOUT  
+IN  
BIPOLAR OFFSET BIPOLAR OFFSET –IN  
CURRENT  
–VS  
ONE SHOT  
CAPACITOR  
NC  
FOUTPUT  
COMPARATOR  
INPUT  
CURRENT  
–VS  
ONE SHOT  
CAPACITOR  
NC  
FOUTPUT  
COMPARATOR  
INPUT  
5
6
NC  
BIPOLAR OFFSET  
CURRENT  
NC  
7
8
9
–VS  
ONE SHOT  
CAPACITOR  
NC  
NC  
FOUTPUT  
10  
11  
12  
13  
DIGITAL GND  
ANALOG GND  
+VS  
DIGITAL GND  
ANALOG GND  
+VS  
OFFSET NULL  
OFFSET NULL  
COMPARATOR  
INPUT  
14  
15  
16  
17  
18  
19  
20  
OFFSET NULL  
OFFSET NULL  
DIGITAL GND  
NC  
ANALOG GND  
NC  
+VS  
OFFSET NULL  
OFFSET NULL  
ORDERING GUIDE  
Gain  
Tempco  
ppm/ ؇C  
100 kHz  
Specified  
Temperature  
Range ؇C  
1 MHz  
Linearity  
Package  
Description  
Package  
Option  
Model  
AD650JN  
AD650KN  
AD650JP  
AD650AD  
AD650BD  
AD650SD  
150 typ  
150 typ  
150 typ  
150 max  
150 max  
150 max  
0.1% typ  
0.1% max  
0.1% typ  
0.1% typ  
0.1% max  
0.1% max  
0 to +70  
0 to +70  
0 to +70  
–25 to +85  
–25 to +85  
–55 to +125  
Plastic DIP  
Plastic DIP  
Plastic Leaded Chip Carrier (PLCC)  
Ceramic DIP  
Ceramic DIP  
Ceramic DIP  
N-14  
N-14  
P-20A  
D-14  
D-14  
D-14  
REV. C  
–3–  
AD650  
CIRCUIT OPERATION  
UNIPOLAR CONFIGURATION  
The AD650 is a charge balance voltage-to-frequency converter. In  
the connection diagram shown in Figure 1, or the block diagram  
of Figure 2a, the input signal is converted into an equivalent cur-  
rent by the input resistance RIN. This current is exactly balanced  
by an internal feedback current delivered in short, timed bursts  
from the switched 1 mA internal current source. These bursts of  
current may be thought of as precisely defined packets of charge.  
The required number of charge packets, each producing one  
pulse of the output transistor, depends upon the amplitude of  
the input signal. Since the number of charge packets delivered  
per unit time is dependent on the input signal amplitude, a linear  
voltage-to-frequency transformation will be accomplished. The  
frequency output is furnished via an open collector transistor.  
Figure 2b. Reset Mode  
Figure 2c. Integrate Mode  
A more rigorous analysis demonstrates how the charge balance  
voltage-to-frequency conversion takes place.  
A block diagram of the device arranged as a V-to-F converter is  
shown in Figure 2a. The unit is comprised of an input integra-  
tor, a current source and steering switch, a comparator and a  
one-shot. When the output of the one-shot is low, the current  
steering switch S1 diverts all the current to the output of the op  
amp; this is called the Integration Period. When the one-shot  
has been triggered and its output is high, the switch S1 diverts  
all the current to the summing junction of the op amp; this is  
called the Reset Period. The two different states are shown in  
Figure 2 along with the various branch currents. It should be  
noted that the output current from the op amp is the same for  
either state, thus minimizing transients.  
Figure 2d. Voltage Across CINT  
The positive input voltage develops a current (IIN = VIN/RIN)  
which charges the integrator capacitor CINT. As charge builds up  
on CINT, the output voltage of the integrator ramps downward  
towards ground. When the integrator output voltage (Pin 1)  
crosses the comparator threshold (–0.6 volt) the comparator  
triggers the one shot, whose time period, tOS is determined by  
the one shot capacitor COS  
.
Specifically, the one shot time period is:  
tOS = COS × 6.8 ×103 sec/F + 3.0 ×10–7 sec  
(1)  
The Reset Period is initiated as soon as the integrator output  
voltage crosses the comparator threshold, and the integrator  
ramps upward by an amount:  
dV  
tOS  
V = tOS  
=
1mAI  
(
)
(2)  
N
dt CINT  
After the Reset Period has ended, the device starts another Inte-  
gration Period, as shown in Figure 2, and starts ramping downward  
again. The amount of time required to reach the comparator  
threshold is given as:  
Figure 1. Connection Diagram for V/F Conversion,  
Positive Input Voltage  
t
OS/CINT(1mA IIN )  
1mA  
IIN  
–1  
V
(3)  
TI =  
=
= tOS  
dV  
dt  
IN/CINT  
The output frequency is now given as:  
IIN  
+ TI tOS ×1mA  
V
IN/RIN  
1
F Hz  
A
fOUT  
=
=
= 0.15  
(4)  
COS + 4.4 ×10–11  
F
tOS  
Note that CINT, the integration capacitor has no effect on the  
transfer relation, but merely determines the amplitude of the  
sawtooth signal out of the integrator.  
One Shot Timing  
A key part of the preceding analysis is the one shot time period  
that was given in equation (1). This time period can be broken  
down into approximately 300 ns of propagation delay, and a sec-  
ond time segment dependent linearly on timing capacitor COS  
When the one shot is triggered, a voltage switch that holds Pin 6  
.
Figure 2a. Block Diagram  
–4–  
REV. C  
AD650  
at analog ground is opened allowing that voltage to change. An  
internal 0.5 mA current source connected to Pin 6 then draws  
its current out of COS, causing the voltage at Pin 6 to decrease  
linearly. At approximately –3.4 V, the one shot resets itself,  
thereby ending the timed period and starting the V/F conversion  
cycle over again. The total one shot time period can be written  
mathematically as:  
V COS  
IDISCHARGE  
tOS  
=
+TGATE DELAY  
(5)  
substituting actual values quoted above,  
–3.4V × COS  
tOS  
=
+ 300 ×10–9 sec  
(6)  
–0.5 ×10–3  
A
Figure 3a. Full-Scale Frequency vs. COS  
This simplifies into the timed period equation given above.  
COMPONENT SELECTION  
Only four component values must be selected by the user. These  
are input resistance RIN, timing capacitor COS, logic resistor R2,  
and integration capacitor CINT. The first two determine the  
input voltage and full-scale frequency, while the last two are  
determined by other circuit considerations.  
Of the four components to be selected, R2 is the easiest to  
define. As a pull-up resistor, it should be chosen to limit the  
current through the output transistor to 8 mA if a TTL maxi-  
mum VOL of 0.4 V is desired. For example, if a 5 V logic supply  
is used, R2 should be no smaller than 5 V/8 mA or 625 . A  
larger value can be used if desired.  
RIN and COS are the only two parameters available to set the  
full- scale frequency to accommodate the given signal range.  
The “swing” variable that is affected by the choice of RIN and  
Figure 3b. Typical Nonlinearity vs. COS  
can be rejected. If the output frequency is measured by counting  
pulses during a constant gate period, the integration provides  
infinite normal-mode rejection for frequencies corresponding to  
the gate period and its harmonics. However, if the integrator  
stage becomes saturated by an excessively large noise pulse, the  
continuous integration of the signal will be interrupted, allowing  
the noise to appear at the output. If the approximate amount of  
noise that will appear on CINT is known (VNOISE), the value of  
CINT can be checked using the following inequality:  
C
OS is nonlinearity. The selection guide of Figure 3 shows this  
quite graphically. In general, larger values of COS and lower  
full-scale input currents (higher values of RIN) provide better  
linearity. In Figure 3, the implications of four different choices  
of RIN are shown. Although the selection guide is set up for a  
unipolar configuration with a zero to 10 V input signal range,  
the results can be extended to other configurations and input  
signal ranges. For a full scale frequency of 100 kHz (corre-  
sponding to 10 V input), you can see that among the available  
choices, RIN = 20 k and COS = 620 pF gives the lowest nonlin-  
earity, 0.0038%. Also, if you wish to use the highest frequency  
that will give the 20 ppm minimum nonlinearity, it is approxi-  
mately 33 kHz (40.2 kand 1000 pF).  
tOS ×1×10–3  
+VS 3V VNOISE  
A
CINT  
>
(8)  
For example, consider an application calling for a maximum  
frequency of 75 kHz, a 0 volt–1 volt signal range, and supply  
voltages of only 9 volts. The component selection guide of Fig-  
ure 3 is used to select 2.0 kfor RIN and 1000 pF for COS. This  
results in a one shot time period of approximately 7 µs. Sub-  
stituting 75 kHz into equation 7 yields a value of 1300 pF for  
CINT. When the input signal is near zero, 1 mA flows through the  
integration capacitor to the switched current sink during the reset  
phase, causing the voltage across CINT to increase by approximately  
5.5 volts. Since the integrator output stage requires approximately  
3 volts head room for proper operation, only 0.5 volt margin  
remains for integrating extraneous noise on the signal line. A  
negative noise pulse at this time might saturate the integrator,  
causing an error in signal integration. Increasing CINT to 1500 pF  
or 2000 pF will provide much more noise margin, thereby elimi-  
nating this potential trouble spot.  
For input signal spans other than 10 V, the input resistance  
must be scaled proportionately. For example, if 100 kis called  
out for a 0 V–10 V span, 10k would be used with a 0 V–1 V  
span, or 200 kwith a 10 V bipolar connection.  
The last component to be selected is the integration capacitor  
C
INT. In almost all cases, the best value for CINT can be calcu-  
lated using the equation:  
10–4F/sec  
CINT  
=
(1000 pF minimum)  
(7)  
fMAX  
When the proper value for CINT is used, the charge balance  
architecture of the AD650 provides continuous integration of  
the input signal, hence large amounts of noise and interference  
REV. C  
–5–  
AD650  
BIPOLAR V/F  
Figure 4 shows how the internal bipolar current sink is used to  
provide a half-scale offset for a 5 V signal range, while provid-  
ing a 100 kHz maximum output frequency. The nominally 0.5 mA  
( 10%) offset current sink is enabled when a 1.24 kresistor is  
connected between Pins 4 and 5. Thus, with the grounded 10 kΩ  
nominal resistance shown, a –5 V offset is developed at Pin 2.  
Since Pin 3 must also be at –5 V, the current through RIN is  
10 V/40 k= +0.25 mA at VIN = +5 V, and 0 mA at  
VIN = –5 V.  
Components are selected using the same guidelines outlined for  
the unipolar configuration with one alteration. The voltage  
across the total signal range must be equated to the maximum  
Figure 5. Connection Diagram for V/F Conversion,  
Negative Input Voltage  
F/V CONVERSION  
The AD650 also makes a very linear frequency-to-voltage  
converter. Figure 6 shows the connection diagram for F/V con-  
version with TTL input logic levels. Each time the input signal  
crosses the comparator threshold going negative, the one shot is  
activated and switches 1 mA into the integrator input for a  
measured time period (determined by COS). As the frequency  
increases, the amount of charge injected into the integration  
capacitor increase proportionately. The voltage across the inte-  
gration capacitor is stabilized when the leakage current through  
R1 and R3 equals the average current being switched into the  
integrator. The net result of these two effects is an average output  
voltage which is proportional to the input frequency. Optimum  
performance can be obtained by selecting components using the  
same guidelines and equations listed in the V/F Conversion section.  
Figure 4. Connections for 5 V Bipolar V/F with 0 to  
100 kHz TTL Output  
input voltage in the unipolar configuration. In other words, the  
value of the input resistor RIN is determined by the input voltage  
span, not the maximum input voltage. A diode from Pin 1 to  
ground is also recommended. This is further discussed in the  
Other Circuit Conditions section.  
The reader is referred to Analog Devices' Application Note  
AN-279 where a more complete description of this application  
can be found.  
As in the unipolar circuit, RIN and COS must have low tempera-  
ture coefficients to minimize the overall gain drift. The 1.24 kΩ  
resistor used to activate the 0.5 mA offset current should also  
have a low temperature coefficient. The bipolar offset current  
has a temperature coefficient of approximately –200 ppm/°C.  
UNIPOLAR V/F, NEGATIVE INPUT VOLTAGE  
Figure 5 shows the connection diagram for V/F conversion of  
negative input voltages. In this configuration full-scale output  
frequency occurs at negative full-scale input, and zero output  
frequency corresponds with zero input voltage.  
A very high impedance signal source may be used since it only  
drives the noninverting integrator input. Typical input imped-  
ance at this terminal is 1 Gor higher. For V/F conversion of  
positive input signals using the connection diagram of Figure 1,  
the signal generator must be able to source the integration cur-  
rent to drive the AD650. For the negative V/F conversion circuit  
of Figure 5, the integration current is drawn from ground  
through R1 and R3, and the active input is high impedance.  
Figure 6. Connection Diagram for F/V Conversion  
HIGH FREQUENCY OPERATION  
Proper RF techniques must be observed when operating the  
AD650 at or near its maximum frequency of 1 MHz. Lead  
lengths must be kept as short as possible, especially on the one  
shot and integration capacitors, and at the integrator summing  
junction. In addition, at maximum output frequencies above  
500 kHz, a 3.6 kpull-down resistor from Pin 1 to –VS is required  
(see Figure 7). The additional current drawn through the pull-  
down resistor reduces the op amp’s output impedance and  
improves its transient response.  
Circuit operation for negative input voltages is very similar to  
positive input unipolar conversion described in a previous sec-  
tion. For best operating results use component equations listed  
in that section.  
–6–  
REV. C  
AD650  
1 µF to 10 µF tantalum capacitor should be connected directly  
to the supply side of the pull-up resistor and to the digital  
ground—Pin 10. The pull-up resistor should be connected  
directly to the frequency output—Pin 8. The lead lengths on the  
bypass capacitor and the pull up resistor should be as short as  
possible. The capacitor will supply (or absorb) the current tran-  
sients, and large ac signals will flow in a physically small loop  
through the capacitor, pull up resistor, and frequency output  
transistor. It is important that the loop be physically small for  
two reasons: first, there is less self-inductance if the wires are  
short, and second, the loop will not radiate RFI efficiently.  
The digital ground (Pin 10) should be separately connected to  
the power supply ground. Note that the leads to the digital  
power supply are only carrying dc current and cannot radiate  
RFI. There may also be a dc ground drop due to the difference  
in currents returned on the analog and digital grounds. This will  
not cause any problem. In fact, the AD650 will tolerate as much  
as 0.25 volt dc potential difference between the analog and digital  
grounds. These features greatly ease power distribution and  
ground management in large systems. Proper technique for  
grounding requires separate digital and analog ground returns to  
the power supply. Also, the signal ground must be referred  
directly to analog ground (Pin 11) at the package. All of the sig-  
nal grounds should be tied directly to Pin 11, especially the  
one-shot capacitor. More information on proper grounding and  
reduction of interference can be found in Reference 1.  
Figure 7. 1 MHz V/F Connection Diagram  
DECOUPLING AND GROUNDING  
It is good engineering practice to use bypass capacitors on the  
supply-voltage pins and to insert small-valued resistors (10 to  
100 ) in the supply lines to provide a measure of decoupling  
between the various circuits in a system. Ceramic capacitors of  
0.1 µF to 1.0 µF should be applied between the supply-voltage  
pins and analog signal ground for proper bypassing on the AD650.  
In addition, a larger board level decoupling capacitor of 1 µF to  
10 µF should be located relatively close to the AD650 on each  
power supply line. Such precautions are imperative in high reso-  
lution data acquisition applications where one expects to exploit  
the full linearity and dynamic range of the AD650. Although  
some types of circuits may operate satisfactorily with power sup-  
ply decoupling at only one location on each circuit board, such  
practice is strongly discouraged in high accuracy analog design.  
TEMPERATURE COEFFICIENTS  
The drift specifications of the AD650 do not include temperature  
effects of any of the supporting resistors or capacitors. The drift  
of the input resistors R1 and R3 and the timing capacitor COS  
directly affect the overall temperature stability. In the application  
of Figure 2, a 10 ppm/°C input resistor used with a 100 ppm/°C  
capacitor may result in a maximum overall circuit gain drift of:  
Separate digital and analog grounds are provided on the AD650.  
The emitter of the open collector frequency output transistor is  
the only node returned to the digital ground. All other signals  
are referred to analog ground. The purpose of the two separate  
grounds is to allow isolation between the high precision analog  
signals and the digital section of the circuitry. As much as sev-  
eral hundred millivolts of noise can be tolerated on the digital  
ground without affecting the accuracy of the VFC. Such ground  
noise is inevitable when switching the large currents associated  
with the frequency output signal.  
150 ppm/°C (AD650A) + 100 ppm/°C (COS) + 10 ppm/°C (RIN) 260 ppm/°C  
In bipolar configuration, the drift of the 1.24 kresistor used to  
activate the internal bipolar offset current source will directly  
affect the value of this current. This resistor should be matched  
to the resistor connected to the op amp noninverting input (Pin  
2), see Figure 4. That is, the temperature coefficients of these  
two resistors should be equal. If this is the case, then the effects  
of the temperature coefficients of the resistors cancel each other,  
and the drift of the offset voltage developed at the op amp non-  
inverting input will be determined solely by the AD650. Under  
these conditions the TC of the bipolar offset voltage is typically  
–200 ppm/°C and is a maximum of –300 ppm/°C. The offset  
voltage always decreases in magnitude as temperature is increased.  
At 1 MHz full scale, it is necessary to use a pull-up resistor of  
about 500 in order to get the rise time fast enough to provide  
well defined output pulses. This means that from a 5 volt logic  
supply, for example, the open collector output will draw 10 mA.  
This much current being switched will surely cause ringing on  
long ground runs due to the self inductance of the wires. For  
instance, #20 gauge wire has an inductance of about 20 nH per  
inch; a current of 10 mA being switched in 50 ns at the end of  
12 inches of 20 gauge wire will produce a voltage spike of 50 mV.  
The separate digital ground of the AD650 will easily handle  
these types of switching transients.  
Other circuit components do not directly influence the accuracy  
of the VFC over temperature changes as long as their actual val-  
ues are not so different from the nominal value as to preclude  
operation. This includes the integration capacitor, CINT. A  
change in the capacitance value of CINT simply results in a dif-  
ferent rate of voltage change across the capacitor. During the  
Integration Phase (refer to Figure 2), the rate of voltage change  
across CINT has the opposite effect that it does during the Reset  
Phase. The result is that the conversion accuracy is unchanged  
A problem will remain from interference caused by radiation of  
electro-magnetic energy from these fast transients. Typically, a  
voltage spike is produced by inductive switching transients;  
these spikes can capacitively couple into other sections of the  
circuit. Another problem is ringing of ground lines and power  
supply lines due to the distributed capacitance and inductance  
of the wires. Such ringing can also couple interference into sen-  
sitive analog circuits. The best solution to these problems is  
proper bypassing of the logic supply at the AD650 package. A  
1“Noise Reduction Techniques in Electronic Systems,” by H. W. OTT,  
(John Wiley, 1976).  
REV. C  
–7–  
AD650  
by either drift or tolerance of CINT. The net effect of a change in  
the integrator capacitor is simply to change the peak to peak ampli-  
tude of the sawtooth waveform at the output of the integrator.  
NONLINEARITY SPECIFICATION  
The linearity error of the AD650 is specified by the endpoint  
method. That is, the error is expressed in terms of the deviation  
from the ideal voltage to frequency transfer relation after cali-  
brating the converter at full scale and “zero”. The nonlinearity  
will vary with the choice of one-shot capacitor and input resistor  
(see Figure 3). Verification of the linearity specification requires  
the availability of a switchable voltage source (or a DAC) having  
a linearity error below 20 ppm, and the use of very long mea-  
surement intervals to minimize count uncertainties. Every AD650  
is automatically tested for linearity, and it will not usually be  
necessary to perform this verification, which is both tedious and  
time consuming. If it is required to perform a nonlinearity test  
either as part of an incoming quality screening or as a final prod-  
uct evaluation, an automated “bench-top” tester would prove  
useful. Such a system based on the Analog Devices’ LTS-2010  
is described in Reference 2.  
The gain temperature coefficient of the AD650 is not a constant  
value. Rather the gain TC is a function of both the full-scale  
frequency and the ambient temperature. At a low full-scale  
frequency, the gain TC is determined primarily by the stability  
of the internal reference—a buried Zener reference. This low  
speed gain TC can be quite good; at 10 kHz full scale, the gain  
TC near 25°C is typically 0 50 ppm/°C. Although the gain TC  
changes with ambient temperature (tending to be more positive  
at higher temperatures), the drift remains within a 75 ppm/°C  
window over the entire military temperature range. At full-scale  
frequencies higher than 10 kHz dynamic errors become much  
more important than the static drift of the dc reference. At a  
full-scale frequency of 100 kHz and above, these timing errors  
dominate the gain TC. For example, at 100 kHz full-scale  
frequency (RIN = 40 k and COS = 330 pF) the gain TC near  
room temperature is typically –80 50 ppm/°C, but at an ambi-  
ent temperature near +125°C, the gain TC tends to be more  
positive and is typically +15 50 ppm/°C. This information is  
presented in a graphical form in Figure 8. The gain TC always  
tends to become more positive at higher temperatures. There-  
fore, it is possible to adjust the gain TC of the AD650 by using  
a one-shot capacitor with an appropriate TC to cancel the drift  
of the circuit. For example, consider the 100 kHz full-scale  
frequency. An average drift of –100 ppm/°C means that as  
temperature is increased, the circuit will produce a lower fre-  
quency in response to a given input voltage. This means that the  
one-shot capacitor must decrease in value as temperature increases  
in order to compensate the gain TC of the AD650; that is, the  
capacitor must have a TC of –100 ppm/°C. Now consider the  
1 MHz full-scale frequency.  
The voltage-to-frequency transfer relation is shown in Figure 9  
with the nonlinearity exaggerated for clarity. The first step in  
determining nonlinearity is to connect the endpoints of the  
Figure 9a. Exaggerated Nonlinearity at 100 kHz Full Scale  
Figure 8. Gain TC vs. Temperature  
It is not possible to achieve very much improvement in perfor-  
mance unless the expected ambient temperature range is known.  
For example, in a constant low temperature application such as  
gathering data in an Arctic climate (approximately –20°C), a  
COS with a drift of –310 ppm/°C is called for in order to compen-  
sate the gain drift of the AD650. However, if that circuit should  
see an ambient temperature of +75°C, the COS cap would  
change the gain TC from approximately 0 ppm to +310 ppm/°C.  
Figure 9b. Exaggerated Nonlinearity at 1 MHz Full Scale  
operating range (typically at 10 mV and 10 V) with a straight  
line. This straight line is then the ideal relationship which is  
desired from the circuit. The second step is to find the difference  
between this line and the actual response of the circuit at a few  
points between the endpoints—typically ten intermediate points  
will suffice. The difference between the actual and the ideal  
response is a frequency error measured in hertz. Finally, these  
frequency errors are normalized to the full-scale frequency and  
expressed either as parts per million of full scale (ppm) or parts  
per hundred of full scale (%). For example, on a 100 kHz full  
The temperature effects of the components described above are  
the same when the AD650 is configured for negative or bipolar  
input voltages, and for F/V conversion as well.  
2“V–F Converters Demand Accurate Linearity Testing,” by L. DeVito,  
(Electronic Design, March 4, 1982).  
–8–  
REV. C  
AD650  
scale, if the maximum frequency error is 5 Hz, the nonlinearity  
would be specified as 50 ppm or 0.005%. Typically on the  
100 kHz scale, the nonlinearity is positive and the maximum  
value occurs at about midscale (Figure 9a). At higher full-scale fre-  
quencies, (500 kHz to 1 MHz), the nonlinearity becomes “S”  
shaped and the maximum value may be either positive or nega-  
tive. Typically, on the 1 MHz scale (RIN = 16.9k, COS = 51 pF)  
the nonlinearity is positive below about 2/3 scale and is negative  
above this point. This is shown graphically in Figure 9b.  
in the figure will never call for a negative voltage at the output  
but one may imagine an arrangement calling for a bipolar out-  
put voltage (say 10 volts) by connecting an extra resistor from  
Pin 3 to a positive voltage. This will not work.  
Care should be taken under conditions where a high positive  
input voltage exists at or before power up. These situations can  
cause a latch up at the integrator output (Pin 1). This is a non-  
destructive latch and, as such, normal operation can be restored  
by cycling the power supply. Latch up can be prevented by  
connecting two diodes (e.g., 1N914 or 1N4148) as shown in  
Figure 4, thereby, preventing Pin 1 from swinging below Pin 2.  
PSRR  
The power supply rejection ratio is a specification of the change  
in gain of the AD650 as the power supply voltage is changed.  
The PSRR is expressed in units of parts-per-million change of  
the gain per percent change of the power supply—ppm/%. For  
example, consider a VFC with a 10 volt input applied and an  
output frequency of exactly 100 kHz when the power supply  
potential is 15 volts. Changing the power supply to 12.5 volts  
is a 5 volt change out of 30 volts, or 16.7%. If the output frequency  
changes to 99.9 kHz, the gain has changed 0.1% or 1000 ppm.  
The PSRR is 1000 ppm divided by 16.7% which equals 60 ppm/%.  
A second major difference is that the output will only sink 1 mA  
to the negative supply. There is no pulldown stage at the output  
other than the 1 mA current source used for the V-to-F conver-  
sion. The op amp will source a great deal of current from the  
positive supply, and it is internally protected by current limiting.  
The output of the op amp may be driven to within 3 volts of the  
positive supply when it is not sourcing external current. When  
sourcing 10 mA the output voltage may be driven to within  
6 volts of the positive supply.  
A third difference between this op amp and a normal device is  
that the inverting input, Pin 3, is bias current compensated and  
the noninverting input is not bias current compensated. The  
bias current at the inverting input is nominally zero, but may be  
as much as 20 nA in either direction. The noninverting input  
typically has a bias current of 40 nA that always flows into the  
node (an npn input transistor). Therefore, it is not possible to  
match input voltage drops due to bias currents by matching  
input resistors.  
The PSRR of the AD650 is a function of the full-scale operating  
frequency. At low full-scale frequencies the PSRR is determined  
by the stability of the reference circuits in the device and can be  
very good. At higher frequencies there are dynamic errors which  
become more important than the static reference signals, and  
consequently the PSRR is not quite as good. The values of PSRR  
are typically 0  
= 40 k, COS = 3300 pF). At 100 kHz (RIN = 40k, COS = 330 pF)  
the PSRR is typically +80 40 ppm/%, and at 1 MHz (RIN  
20 ppm/% at 10 kHz full-scale frequency (RIN  
=
The op amp has provisions for trimming the input offset volt-  
age. A potentiometer of 20 kis connected to Pins 13 and 14  
and the wiper is connected to the positive supply through a  
250 kresistor. A potential of about 0.6 volt is established  
across the 250 kresistor, and the 3 µA current is injected into  
the null pins. It is also possible to null the op amp offset voltage  
by using only one of the null pins and use a bipolar current  
either into or out of the null pin. The amount of current required  
will be very small—typically less than 3 µA. This technique is  
shown in the applications section of this data sheet: the autozero  
circuit uses this technique.  
16.9 k, COS = 51 pF) the PSRR is +350 50 ppm/%. This  
information is summarized graphically in Figure 10.  
The bipolar offset current is activated by connecting a 1.24 kΩ  
resistor between Pin 4 and the negative supply. The resultant  
current delivered to the op amp noninverting input is nominally  
0.5 mA and has a tolerance of 10%. This current is then used  
to provide an offset voltage when Pin 2 is tied to ground through a  
resistor. The 0.5 mA which appears at Pin 2 is also flowing through  
the 1.24 kresistor and this current may be by observing the  
voltage across the 1.24 kresistor. An external resistor is used  
to activate the bipolar offset current source to provide the lowest  
tolerance and temperature drift of the resultant offset voltage. It  
is possible to use other values of resistance between Pin 4 and –VS  
to obtain a bipolar offset current different than 0.5 mA. Fig-  
ure 11 is a graph of the relationship between the bipolar offset  
current and the value of the resistor used to activate the source.  
Figure 10. PSRR vs. Full-Scale Frequency  
OTHER CIRCUIT CONSIDERATIONS  
The input amplifier connected to Pins 1, 2 and 3 is not a standard  
operational amplifier. Rather, the design has been optimized for  
simplicity and high speed. The single largest difference between  
this amplifier and a normal op amp is the lack of an integrator  
(or level shift) stage. Consequently the voltage on the output  
(Pin 1) must always be more positive than 2 volts below the  
inputs (Pins 2 and 3). For example, in the F-to-V conversion  
mode, see Figure 6, the noninverting input of the op amp (Pin 2) is  
grounded, which means that the output (Pin 1) will not be able  
to go below –2 volts. Normal operation of the circuit as shown  
REV. C  
–9–  
AD650  
constant offset voltage will not affect dynamic range but simply  
shift all of the frequency readings by a few hertz. However, if the  
offset should change, then it will not be possible to distinguish  
between a small change in a small input voltage and a drift of  
the offset voltage. Hence, the usable dynamic range is less. The  
circuit shown in Figure 13 provides automatic adjustment of the  
op amp offset voltage. The circuit uses an AD582 sample and  
hold amplifier to control the offset and the input voltage to the  
VFC is switched between ground and the signal to be measured  
via an AD7512DI analog switch. The offset of the AD650 is  
adjusted by injecting a current into or drawing a current out of  
Pin 13. Note that only one of the offset null pins is used. During  
the “VFC Norm” mode, the SHA is in the hold mode and the  
hold capacitor is very large, 0.1 µF, to hold the AD650 offset  
constant for a long period of time.  
Figure 11. Bipolar Offset Current vs. External Resistor  
APPLICATIONS  
DIFFERENTIAL VOLTAGE-TO-FREQUENCY  
CONVERSION  
The circuit of Figure 12 accepts a true floating differential input  
signal. The common-mode input, VCM, may be in the range  
+15 to –5 volts with respect to analog ground. The signal input,  
VIN, may be 5 volts with respect to the common-mode input.  
Both inputs are low impedance: the source which drives the  
common-mode input must supply the 0.5 mA drawn by the  
bipolar offset current source and the source which drives the  
signal input must supply the integration current.  
If less common-mode voltage range is required, a lower voltage  
Zener may be used. For example, if a 5 volt Zener is used, the  
V
CM input may be in the range +10 to –5 volt. If the Zener is  
Figure 13. Autozero Circuit  
not used at all, the common-mode range will be 5 volts with  
respect to analog ground. If no Zener is used, the 10k pulldown  
resistor is not needed and the integrator output (Pin 1) is con-  
nected directly to the comparator input (Pin 9).  
When the circuit is in the “Autozero” mode the SHA is in  
sample mode and behaves like an op amp. The circuit is a varia-  
tion of the classical two amplifier servo loop, where the output  
of the Device Under Test (DUT)—here the DUT is the AD650  
op amp—is forced to ground by the feedback action of the con-  
trol amplifier—the SHA. Since the input of the VFC circuit is  
connected to ground during the autozero mode, the input cur-  
rent which can flow is determined by the offset voltage of the  
AD650 op amp. Since the output of the integrator stage is  
forced to ground it is known that the voltage is not changing (it  
is equal to ground potential). Hence if the output of the integra-  
tor is constant, its input current must be zero, so the offset voltage  
has been forced to be zero. Note that the output of the DUT  
could have been forced to any convenient voltage other than  
ground. All that is required is that the output voltage be known  
to be constant. Note also that the effect of the bias current at  
the inverting input of the AD650 op amp is also nulled in this  
circuit. The 1000 pF capacitor shunting the 200 kresistor  
is compensation for the two amplifier servo loop. Two integra-  
tors in a loop requires a single zero for compensation. Note that  
the 3.6 kresistor from Pin 1 of the AD650 to the negative sup-  
ply is not part of the autozero circuit, but rather it is required for  
VFC operation at 1 MHz.  
Figure 12. Differential Input  
AUTOZERO CIRCUIT  
PHASE LOCKED LOOP F/V CONVERSION  
In order to exploit the full dynamic range of the AD650 VFC,  
very small input voltages will need to be converted. For example,  
a six decade dynamic range based on a full scale of 10 volts will  
require accurate measurement of signals down to 10 µV. In these  
situations a well-controlled input offset voltage is imperative. A  
Although the F/V conversion technique shown in Figure 6 is quite  
accurate and uses only a few extra components, it is very limited  
in terms of signal frequency response and carrier feed-through.  
If the carrier (or input) frequency changes instantaneously, the  
–10–  
REV. C  
AD650  
output cannot change very rapidly due to the integrator time  
constant formed by CINT and RIN. While it is possible to decrease  
the integrator time constant to provide faster settling of the  
F-to-V output voltage, the carrier feedthrough will then be  
larger. For signal frequency response in excess of 2 kHz, a phase  
locked F/V conversion technique such as the one shown in Fig-  
ure 14 is recommended.  
the AD650 slightly, driving the system towards synchronization.  
In a similar manner, if the input carrier lags the output carrier,  
the integrator will be forced down slightly to synchronize the  
two signals.  
Using a mathematical approach, the 25 µA pulses from the  
phase detector are incorporated into the phase detector gain, Kd.  
Using a mathematical approach, the 25 µA pulses from the  
phase detector are incorporated into the phase detector gain, Kd.  
25 µA  
2π  
Kd =  
= 4 ×10–6 amperes/radian  
(9)  
Also, the V/F converter is configured to produce 1 MHz in  
response to a 10 volt input, so its gain Ko, is:  
2 π ×1×106 Hz  
radians  
volt • sec  
Ko =  
= 6.3 ×105  
(10)  
10V  
The dynamics of the phase relationship between the input and  
output signals can be characterized as a second order system  
with natural frequency ωn:  
KoKd  
C
(11)  
ωn =  
Figure 14. Phase Locked Loop F/V Conversion  
In a phase locked loop circuit, the oscillator is driven to a frequency  
and phase equal to an input reference signal. In applications  
such as a synthesizer, the oscillator output frequency is first pro-  
cessed through a programmable “divide by N” before being  
applied to the phase detector as feedback. Here the oscillator  
frequency is forced to be equal to “N times” the reference fre-  
quency and it is this frequency output which is the desired  
output signal and not a voltage. In this case, the AD650 offers  
compact size and wide dynamic range.  
and damping factor  
R C KoKd  
(12)  
ζ =  
2
For the values shown in Figure 14, these relations simplify to a  
natural frequency of 35 kHz with a damping factor of 0.8.  
For those desiring a simple approach to determining component  
values for other PLL frequencies and VFC full-scale voltage, the  
following cookbook steps can be used:  
In signal recovery applications of a PLL, the desired output sig-  
nal is the voltage applied to the oscillator. In these situations a  
linear relationship between the input frequency and the output  
voltage is desired; the AD650 makes a superb oscillator for FM  
demodulation. The wide dynamic range and outstanding linearity  
of the AD650 VFC allow simple embodiment of high perfor-  
mance analog signal isolation or telemetry systems. The circuit  
shown in Figure 14 uses a digital phase detector which also pro-  
vides proper feedback in the event of unequal frequencies. Such  
phase-frequency detectors (PFDs) are available in integrated  
form. For a full discussion of phase lock loop circuits see  
Reference 3.  
1. Determine Ko (in units of radians per volt second) from the  
maximum input carrier frequency FMAX (in hertz) and the  
maximum output voltage VMAX  
.
2 π × FMAX  
Ko =  
(13)  
VMAX  
2. Calculate a value for C based upon the desired loop band-  
width, fn. Note that this is the desired frequency range of the  
output signal. The loop bandwidth (fn) is not the maximum  
carrier frequency (fMAX): the signal may be very narrow even  
though it is transmitted over a 1 MHz carrier.  
An analysis of this circuit must begin at the 7474 dual D flip  
flop. When the input carrier matches the output carrier in both  
phase and frequency, the Q outputs of the flip flops will rise at  
exactly the same time. With two zeros, then two ones on the  
inputs of the exclusive or (XOR) gate, the output will remain  
low keeping the DMOS FET switched off. Also, the NAND  
gate will go low resetting the flip-flops to zero. Throughout the  
entire cycle just described, the DMOS integrator gate remained  
off, allowing the voltage at the integrator output to remain  
unchanged from the previous cycle. However, if the input carrier  
leads the output carrier by a few degrees, the XOR gate will be  
turned on for the small time span that the two signals are mis-  
matched. Since Q2 will be low during the mismatch time, a  
negative current will be fed into the integrator, causing its out-  
put voltage to rise. This in turn will increase the frequency of  
Ko  
fn  
C units FARADS  
fn units HERTZ  
Ko units RAD/VOLT•SEC  
V F  
C = 2 •1×10–7  
(14)  
Rad • sec  
3. Calculate R to yield a damping factor of approximately 0.8  
using this equation:  
fn  
Ko  
R units OHMS  
fn units HERTZ  
Ko units RAD/VOLT•SEC  
Rad  
R =  
2.5×106  
(15)  
V
If in actual operation the PLL overshoots or hunts excessively  
before reaching a final value, the damping factor may be raised  
by increasing the value of R. Conversely, if the PLL is over-  
damped, a smaller value of R should be used.  
3“Phase lock Techniques,” 2nd Edition, by F.M. Gardner, (John Wiley and  
Sons, 1979)  
REV. C  
–11–  
AD650  
OUTLINE DIMENSIONS  
Dimensions shown in inches and (mm).  
14-Lead Ceramic DIP  
(D-14)  
0.005 (0.13) MIN  
14  
0.098 (2.49) MAX  
8
0.310 (7.87)  
0.220 (5.59)  
7
1
0.320 (8.13)  
0.290 (7.37)  
PIN 1  
0.785 (19.94) MAX  
0.060 (1.52)  
0.015 (0.38)  
0.200 (5.08)  
MAX  
0.200 (5.08)  
0.125 (3.18)  
0.150  
(3.81)  
MAX  
0.015 (0.38)  
0.008 (0.20)  
0.100  
(2.54)  
BSC  
SEATING  
PLANE  
0.023 (0.58)  
0.014 (0.36)  
0.070 (1.78)  
0.030 (0.76)  
14-Lead Plastic DIP  
(N-14)  
0.795 (20.19)  
0.725 (18.42)  
14  
8
7
0.280 (7.11)  
0.240 (6.10)  
1
0.325 (8.25)  
0.300 (7.62)  
PIN 1  
0.100 (2.54)  
BSC  
0.060 (1.52)  
0.015 (0.38)  
0.195 (4.95)  
0.115 (2.93)  
0.210 (5.33)  
MAX  
0.130  
(3.30)  
MIN  
0.160 (4.06)  
0.115 (2.93)  
0.015 (0.381)  
0.008 (0.204)  
SEATING  
PLANE  
0.022 (0.558)  
0.014 (0.356)  
0.070 (1.77)  
0.045 (1.15)  
20-Lead PLCC  
(P-20A)  
0.180 (4.57)  
0.165 (4.19)  
0.048 (1.21)  
0.042 (1.07)  
0.056 (1.42)  
0.042 (1.07)  
0.025 (0.63)  
0.015 (0.38)  
0.048 (1.21)  
0.042 (1.07)  
3
19  
18  
0.021 (0.53)  
0.013 (0.33)  
4
PIN 1  
0.050  
(1.27)  
BSC  
IDENTIFIER  
0.330 (8.38)  
0.290 (7.37)  
TOP VIEW  
(PINS DOWN)  
0.032 (0.81)  
0.026 (0.66)  
8
14  
9
13  
0.020  
(0.50)  
R
0.040 (1.01)  
0.025 (0.64)  
0.356 (9.04)  
0.350 (8.89)  
0.395 (10.02)  
0.385 (9.78)  
SQ  
0.110 (2.79)  
0.085 (2.16)  
SQ  
–12–  
REV. C  

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SI9130DB

5- and 3.3-V Step-Down Synchronous Converters

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VISHAY

SI9135LG-T1

SMBus Multi-Output Power-Supply Controller

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VISHAY

SI9135LG-T1-E3

SMBus Multi-Output Power-Supply Controller

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SI9135_11

SMBus Multi-Output Power-Supply Controller

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VISHAY

SI9136_11

Multi-Output Power-Supply Controller

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SI9130CG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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VISHAY